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Selenization and vulcanization reaction device for solar cell substrate

A solar cell and vulcanization reaction technology, which is applied in the direction of circuits, electrical components, gaseous chemical plating, etc., to achieve the effect of ensuring the process requirements

Inactive Publication Date: 2016-06-08
英莱新能(上海)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is no special equipment for selenization and sulfuration reactions in the existing copper indium gallium selenium solar cell production process, and each manufacturer makes corresponding equipment according to its process conditions to realize selenization and sulfuration reactions

Method used

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  • Selenization and vulcanization reaction device for solar cell substrate

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] see figure 1 , the selenization and vulcanization reaction device of the solar cell substrate of the present invention comprises:

[0010] The outer cavity 10 is provided with an outer cavity inlet and an outer cavity outlet for the entry and exit of the substrate 100, and the outer cavity inlet and the outer cavity outlet are respectively provided with air jet isolation devices 11 and 12;

[0011] The reaction chamber 20 located in the outer chamber 10 is provided with a reaction chamber inlet and a reaction chamber outlet for the entry and exit of the substrate 100, and the reaction chamber inlet and the reaction chamber outlet are respectively provided with gas jet isolation Devices 21, 22, the reaction chamber 20 is provided with a selenium vapor pipe 40, a sulfur vapor pipe 50 and a clear gas delivery pipe 60;

[0012] A plurality of heaters 23 placed outside the reaction chamber 20;

[0013] A heat reflective layer 30 coated outside the reaction chamber 20, the ...

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Abstract

The invention discloses a solar cell substrate selenization and sulfurization reactor which comprises an outer chamber, a reaction chamber, a plurality of heaters, a heat reflection layer and a conveyor, wherein the outer chamber is provided with an outer chamber inlet and an outer chamber outlet for feeding and discharging the substrate, and the outer chamber inlet and the outer chamber outlet are respectively provided with a jet isolating device; the reaction chamber is positioned in the outer chamber, and provided with a reaction chamber inlet and a reaction chamber outlet for feeding and discharging the substrate; the reaction chamber inlet and the reaction chamber outlet are respectively provided with a jet isolating device; the reaction chamber is provided with a selenium steam pipe, a sulfur steam pipe and a drainage gas delivery pipe; the heaters are arranged outside the reaction chamber; the heat reflection layer is coated outside the reaction chamber; the heaters are positioned between the reaction chamber and the heat reflection layer; and the conveyor is used for conveying the substrate into and out of the reaction chamber. The invention can implement the selenization and sulfurization reaction of the substrate, and ensure the technological requirements of the selenization and sulfurization reaction.

Description

technical field [0001] The invention relates to a production equipment of a solar cell, in particular to a selenization and vulcanization reaction device for a substrate of a copper indium gallium selenide solar cell. Background technique [0002] Copper indium gallium selenide solar cells have the notable characteristics of low production cost, less pollution, no fading, and good low-light performance. One-third of the battery is called a new type of thin film solar battery internationally, but it has high requirements on the process and preparation conditions. [0003] Copper indium gallium selenium thin film solar cells use soda lime glass. The formation of the film has the first step, depositing molybdenum film to form the bottom electrode; the second step, depositing copper indium gallium film to form a prefabricated layer; the third step, through selenization and sulfurization Generate copper indium gallium selenide crystals; the fourth step is to form a cadmium sulfi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/30C23C16/44C23C16/455H01L31/18
CPCY02P70/50
Inventor 钱青龚立光
Owner 英莱新能(上海)有限公司