Nitride semiconductor device

Abstract

This nitride semiconductor device is provided with a semiconductor substrate (101) and a nitride semiconductor layer (102) formed on the semiconductor substrate. The semiconductor substrate (101) comprises a normal region (101A), carrier supply region(s) (101C), and an interface current blocking region (101B). The interface current blocking region surrounds the normal region and carrier supply region(s), and the interface current blocking region and carrier supply region(s) each contain impurities. The carrier supply region(s) forms a source for supplying carriers to a carrier layer formed at the interface between the nitride semiconductor layer and the semiconductor substrate and has a conductivity type that forms an elimination destination for the carriers. The interface current blocking region is of a conductivity type that forms a potential barrier for the carriers.

Description

technical field [0001] The present invention relates to a nitride semiconductor device, and more particularly, to a semiconductor device using a nitride semiconductor that can be applied as a power transistor used in a power supply circuit or the like. Background technique [0002] Nitride semiconductors typified by gallium nitride (GaN) are attracting attention as materials for high-frequency semiconductor devices or high-output semiconductor devices. Research on using a silicon (Si) substrate or the like as a substrate for forming a semiconductor device using a nitride semiconductor is ongoing. The Si substrate can easily achieve a larger diameter, and if the Si substrate is used as the substrate on which the nitride semiconductor is grown, the cost of the semiconductor device using the nitride semiconductor can be greatly reduced. [0003] When forming a semiconductor device using a nitride semiconductor on a Si substrate, the potential of the Si substrate affects the op...

AI Technical Summary

Problems solved by technology

It has also been found that not only Si substrates but also other semiconductor substrates such as silicon carbide (SiC) substrates and gallium arsenide (GaAs) substrates have the same problem

Furthermore, it was found that the reason why the vertical withstand voltage of the semiconductor device cannot be increased is that it also affects the electrical characteristics such as switching characteristics and high-frequency characteristics of the semiconductor device.

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