Assessment method for wafer-level electronic packaging device welding spot initial damage deterioration
A technology of electronic packaging and initial destruction, applied in the field of material science, can solve problems such as affecting the accuracy of evaluation results, and achieve the effects of saving test costs, shortening development cycles, and improving accuracy
Inactive Publication Date: 2013-11-27
FUDAN UNIV
View PDF1 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, if the evaluation basis cannot be selected correctly, it will inevitably affect the accuracy of the evaluation results
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0037] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
[0038] The possibility of further deterioration of the initial damage of the solder joints of the wafer-level electronic packaging device is evaluated by using a method for evaluating the possibility of deterioration of the initial damage of the solder joints of the wafer-level electronic packaging device of the present invention.
[0039] The specific research objects are 11×11 wafer-level electronic packaging devices, figure 1It is a two-dimensional geometric model diagram of a single solder joint. The specific size of the model: silicon chip length 0.4448mm, thickness 0.1mm; solder joints from left to right 0.304mm, thickness 0.1524mm; copper pad length 0.4448mm, thickness 0.0428mm; RF-4 substrate length 0.4448mm, thickness 0.1mm; Metal layer gold layer thickness 0.0005mm; multi-metal layer nickel layer thickness 0.002mm; multi-metal layer ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention belongs to the technical field of material science, and particularly relates to an assessment method for wafer-level electronic packaging device welding spot initial damage deterioration. Based on the fact that initial damage has already been caused on a welding spot, the method is used for predicting possibilities of further deterioration of the damage. The method includes the steps of first step, obtaining performance material parameters of each component of an electronic packaging device and determining a constitutive model of the welding spot, second step, building a two-dimensional finite element model according to a predicted structure of the electronic packaging device and adding boundary conditions and corresponding load according to actual service conditions to carry out finite element numerical simulation, and step 3, carrying out reliability analysis and prediction on the welding spot, specifically, enabling a welding spot initial damage sharp end to be a plastic deformation area and adopting a J integral numerical treatment method. The method is simple and high in accuracy, a large number of actual experiments are not needed, cost can be saved, and production efficiency can be improved.
Description
technical field [0001] The invention belongs to the technical field of material science, and in particular relates to a method for evaluating the possibility of further damage to solder joints of wafer-level electronic packaging devices. technical background [0002] At present, wafer-level electronic packaging technology is gradually favored by consumer IC packaging manufacturers due to the small size, light weight, low cost, high production efficiency and short production cycle of packaged products. Wafer-level packaging technology provides better heat dissipation than other surface mount technologies. In addition, all package sizes fully comply with JEDEC / EIAJ industry standards and are directly compatible with today's surface mount technology and testing. [0003] Although the wafer-level electronic packaging technology has a bright future, it also has its own shortcomings. Metal layers made of different metal materials are required in the package. These metal layers ha...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 卢景红张浩卢红亮徐敏
Owner FUDAN UNIV