Organic light-emitting device and preparation method thereof
An electroluminescent device and luminescence technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of reduced probability of hole and electron recombination, change of color coordinates, poor color rendering, etc.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2013-12-04
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to the related field of electronic devices, in particular to an organic electroluminescent device and a preparation method thereof. Background technique
[0002] In 1987, C.W.Tang and Van Slyke of Eastman Kodak Company in the United States reported a breakthrough in the research of organic electroluminescence. They used ultra-thin film technology to prepare high-brightness, high-efficiency double-layer organic electroluminescent devices (OLEDs). In this double-layer structure device, the brightness reaches 1000cd / m at 10V 2 , its luminous efficiency is 1.51lm / W, and its lifespan is more than 100 hours.
[0003] The principle of OLED light emission is based on the action of an external electric field, electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of the organic material compound, and holes are injected from the anode to the highest occupied orbital (HOMO) of the organic material compoun...
Examples
Embodiment 1
[0066] A method for preparing an organic electroluminescent device, comprising the following steps:
[0067] (1) Photolithographically process the ITO, cut it into the required size, and use detergent, deionized water, acetone, ethanol, and isopropanol to sonicate for 15 minutes each to remove organic pollutants on the glass surface. The anode substrate is subjected to oxygen plasma treatment, the treatment time is 5min, and the power is 30W;
[0068] (2) Evaporate the quantum well layer on the anode substrate treated in (1), evaporate the first p-doped hole transport layer on the anode substrate, and evaporate the first p-doped hole transport layer on the first p-doped hole transport layer The first light-emitting layer, vapor-depositing the p-doped hole transport layer on the first light-emitting layer, vapor-depositing the second light-emitting layer on the second p-doped hole transport layer, vapor-depositing the third light-emitting layer on the second light-emitting laye...
Embodiment 2
[0076] A method for preparing an organic electroluminescent device, comprising the following steps:
[0077] (1) Perform photolithography treatment on IZO, cut it into the required size, and use detergent, deionized water, acetone, ethanol, and isopropanol to sonicate for 15 minutes each to remove organic pollutants on the glass surface. The anode conductive substrate is subjected to oxygen plasma treatment, the treatment time is 5min, and the power is 30W;
[0078] (2) Evaporate the quantum well layer on the anode conductive substrate treated in (1), evaporate the first p-doped hole transport layer on the anode conductive substrate, and deposit the first p-doped hole transport layer on the first p-doped hole transport layer A light-emitting layer is evaporated, and then a second p-doped hole transport layer is evaporated on the light-emitting layer, and the quantum well layer includes the first and second p-doped hole transport layers and the light-emitting layer.
[0079] Amo...
Embodiment 3
[0084] A method for preparing an organic electroluminescent device, comprising the following steps:
[0085] (1) Photolithographically process the ITO, cut it into the required size, and use detergent, deionized water, acetone, ethanol, and isopropanol to sonicate for 15 minutes each to remove organic pollutants on the glass surface. The anode substrate is subjected to oxygen plasma treatment, the treatment time is 5min, and the power is 30W;
[0086] (2) Evaporate the quantum well layer on the anode substrate treated in (2), evaporate the first p-doped hole transport layer on the anode conductive substrate, and evaporate the first p-doped hole transport layer on the first p-doped hole transport layer The first light-emitting layer, vapor-depositing the second p-doped hole transport layer on the first light-emitting layer, vapor-depositing the second light-emitting layer on the second p-doped hole transport layer, vapor-depositing the second light-emitting layer on the second ...