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Nanometer wire ultraviolet light detector and preparing method and application thereof

A nanowire and detector technology, applied in the field of nanowire ultraviolet light detectors and its preparation and application, can solve the problems that Ni-NiO nanowire ultraviolet light nanowire detectors have not been found, and achieve enhanced amplitude and preparation method Simple, fast-response effects

Inactive Publication Date: 2013-12-11
CHINA UNIV OF PETROLEUM (BEIJING)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, there is no report on the use of Ni-NiO nanowires to make UV nanowire detectors

Method used

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  • Nanometer wire ultraviolet light detector and preparing method and application thereof
  • Nanometer wire ultraviolet light detector and preparing method and application thereof
  • Nanometer wire ultraviolet light detector and preparing method and application thereof

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Experimental program
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Embodiment 1

[0061] The structure and preparation of the ultraviolet light detector provided in this embodiment will be described in detail below with reference to the drawings and embodiments.

[0062] refer to figure 1 , to prepare a UV photodetector device with a photoresponsive layer made of Ni-NiO nanowire material: select DC electrophoretic deposition equipment, use alumina templates to directly grow Ni nanowires, with a thickness of 50um and a diameter of 250nm. After removing part of the template, after Oxidation at high temperature to obtain a Ni-NiO nanowire sample; the direct current electrophoresis condition is: direct current electrophoresis method. Growth parameters: 1. Reaction solution (80.46g / L Ni 2 SO 4 ·7H 2 O, 45g / L H 3 BO 4 , adding sulfuric acid to adjust the ph value to 3); 2. Current density (current: initial current is 6mA / cm 2 , reduced to 3mA / cm after two minutes 2 ); 3. Reaction time (3 hours); 4. Reaction temperature (15 to 30 degrees Celsius); the oxida...

Embodiment 2

[0068] The structure and preparation of the ultraviolet light detector provided in this embodiment will be described in detail below with reference to the drawings and embodiments.

[0069] refer to figure 2 , to prepare a UV photodetector device with a photoresponsive layer made of Ni-NiO nanowire material: select DC electrophoretic deposition equipment, use alumina templates to directly grow Ni nanowires, with a thickness of 50um and a diameter of 250nm. After removing part of the template, after Oxidation at high temperature to obtain a Ni-NiO nanowire sample; the direct current electrophoresis condition is: direct current electrophoresis method. Growth parameters: 1. Reaction solution (80.46g / L Ni 2 SO 4 ·7H 2 O, 45g / L H 3 BO 4 , adding sulfuric acid to adjust the ph value to 3); 2. Current density (current: initial current is 6mA / cm 2 , reduced to 3mA / cm after two minutes 2 ); 3. Reaction time (3 hours); 4. Reaction temperature (15 to 30 degrees Celsius); the oxid...

Embodiment 3

[0074] The structure and preparation of the ultraviolet light detector provided in this embodiment will be described in detail below with reference to the drawings and embodiments.

[0075] refer to image 3 , to prepare a UV photodetector device with a photoresponsive layer made of Ni-NiO nanowire material: select DC electrophoretic deposition equipment, use alumina templates to directly grow Ni nanowires, with a thickness of 50um and a diameter of 250nm. After removing part of the template, after High-temperature oxidation to obtain Ni-NiO nanowire samples; cut the prepared Ni-NiO nanowire samples into 1×1cm 2 The chip 2 is set with silver glue on the symmetrical positions of the left and right sides of the surface, and the first electrode 3 and the second electrode 4 are set as a group, wherein the first electrode is silver, the second electrode is gold, and the electrode 3 is about 1mm 2 ; Make the first electrode lead wire 5 and the second electrode lead wire 6 with a co...

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Abstract

The invention provides a nanometer wire ultraviolet light detector and a preparing method and application thereof. The detector comprises a substrate layer (1), a photo-response layer (2) arranged on the substrate layer, a first electrode (3) and a second electrode (4), wherein the first electrode (3) and the second electrode (4) are connected with a first electrode lead (5) and a second electrode lead (6) respectively, and the photo-response layer is a Ni-NiO nanometer wire. The ultraviolet light detector is simple in preparing method, low in cost and easy to produce industrially in a mass mode.

Description

technical field [0001] The invention relates to a nanowire ultraviolet light detector and its preparation method and application. Background technique [0002] The potential use of nanowires for ultraviolet light detection has attracted considerable interest in recent years. Most of the nanowires used to make ultraviolet photodetectors are ZnO, for example: Suo Bai, Weiwei Wu, Yong Qin, Nuanyang Cui, Dylan J. Bayer, and Xudong Wang, High-Performance Integrated ZnO Nanowire UV Sensors on Rigid and Flexible Substrates, ADVANCED FUNCTIONAL MATERIALS, 2011, 21: 4464-4469 and Venkata Chivukula, Daumantas Ciplys, Michael Shur, and Partha Dutta, ZnO nanoparticle surface acoustic wave UV sensor, APPLIED PHYSICS LETTERS96, 2335012) ( This kind of ultraviolet detector made of zinc oxide and other materials is not suitable for harsh environments such as oil and gas fields due to the nature of the material itself (easy to be corroded by acids, alkalis, fatty acids and other materials)....

Claims

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Application Information

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IPC IPC(8): H01L31/09H01L31/0352H01L31/032H01L31/18G01J1/42B82Y30/00B82Y40/00
CPCY02P70/50
Inventor 相文峰潘亚武
Owner CHINA UNIV OF PETROLEUM (BEIJING)