MOCVD reaction chamber and process equipment

Abstract

The invention discloses an MOCVD (metal-organic chemical vapor deposition) reaction cavity and process equipment. The MOCVD reaction cavity comprises a cavity body, a tray, a central gas inlet device, an external heating device and an internal heating device, wherein the central gas inlet device is positioned in the middle position in the cavity body, the tray is positioned in the cavity body and arranged on the periphery of the central gas inlet device, the external heating device is positioned outside the cavity body, and the internal heating device is positioned in the central gas inlet device; the tray is used for carrying a substrate; the central gas inlet device is used for introducing reaction gas into the cavity body; the external heating device is used for heating the tray; and the internal heating device is used for heating the tray. The MOCVD reaction cavity disclosed by the invention reduces the pre-reaction probability of the reaction gas and enables the reaction gas to form a stable reaction gas flow field.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a MOCVD reaction chamber and process equipment. Background technique [0002] Metal-organic chemical vapor deposition (Metal-organic Chemical Vapor Deposition, hereinafter referred to as: MOCVD) technology is a new technology for the preparation of compound semiconductor flake single crystal proposed by Manasevit et al. of Rockwell Company in the United States in 1968. [0003] MOCVD technology is a new type of vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy (VaporPhase Epitaxy, hereinafter referred to as: VPE). The MOCVD technology uses organic compounds of group III and group II elements and hydrides of group V and group VI elements as crystal growth source materials, and conducts vapor phase epitaxy on the substrate by thermal decomposition reaction to grow various groups III-V, Thin-layer monocrystalline materials of II-VI compoun...

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Problems solved by technology

However, (1) due to the presence of inductance coils and magnetic field shielding layers around the central air intake device, the reaction gas flow to the reaction area is hindered, increasing the occurrence of pre-reaction, and it is difficult to obtain a stable reaction gas flow field, making it difficult to produce better quality deposited film

(2) The existence of the internal heating coil improves the radial temperature uniformity of the heating tray, but the independent control of the inner and outer coils brings difficulties to the precise control of the temperature inside the reaction chamber, and it is difficult to achieve accurate temperature control in engineering, and it is difficult to meet the process requirements.

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