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Mask and overlay precision measuring method

A technology of overlay accuracy and measurement method, which is applied in the field of mask and overlay accuracy measurement, and can solve problems such as uncontrollable overlay accuracy.

Active Publication Date: 2013-12-18
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for measuring mask plate and overlay accuracy, so as to solve the problem in the prior art that the overlay accuracy between exposure units of the first layer after exposure is uncontrollable

Method used

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  • Mask and overlay precision measuring method
  • Mask and overlay precision measuring method
  • Mask and overlay precision measuring method

Examples

Experimental program
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Effect test

Embodiment 1

[0032] like image 3 As shown, this embodiment provides a mask plate 300, specifically, including a pattern area 302 and a peripheral area 301; the peripheral area 301 has a plurality of first marks A and a plurality of second marks B for alignment , wherein the first mark A and the second mark B have different sizes and / or shapes. In this embodiment, the first mark A and the second mark B have the same shape but different sizes. Specifically, the first mark A and the second mark B are rectangles with different sizes (sizes). In other embodiments of the present invention, the first mark A and the second mark B can also be in other shapes , for example: triangle, rhombus, etc., which are not limited in this application. There are 2 each of the first mark A and the second mark B. As shown in the figure, the order of the first mark A and the second mark B is AABB clockwise. Wherein, the centers of the first mark A and the second mark B on the opposite side are collinear, and ...

Embodiment 2

[0035] like Figure 5 As shown, this embodiment provides a mask plate 500, specifically, including a pattern area 502 and a peripheral area 501; the peripheral area 501 has a plurality of first marks A and a plurality of second marks B for alignment , wherein the first mark A and the second mark B have different sizes and / or shapes. In this embodiment, the first mark A and the second mark B have the same shape but different sizes. The first mark A and the second mark B are 4 each. As shown in the figure, the first marks A and the second marks B are arranged at intervals. A first mark A and a second mark B are respectively distributed around the peripheral area 501 . Wherein, each first mark A / second mark B is collinear with the center of the second mark B / first mark A on the same side and the second mark B / first mark A on the opposite side, as shown in the figure, the first The center of the second mark B is collinear with the first mark A on the same side and the first ma...

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Abstract

The invention provides a mask and an overlay precision measuring method. The peripheral region of the mask is provided with a plurality of first marks A and second marks B, the peripheral regions of all exposal units can be intersected after the exposure of the whole wafer is ended, the first mark A and the second mark B of one of the exposal units can be respectively nested with the second mark B and the first mark A of the adjacent exposal unit, and on the basis, the relationship between the nested first marks A and the second marks B is measured to determine the overlay precision among the exposal units on the first layer, so that the initial condition of a product is better mastered; the measured overlay precision among the exposal units on the first layer is uploaded to an advanced process control system, so that the overlay precision among the exposal units on all the subsequent layers and the whole condition of the series of products can be mastered, and the actual production requirement is met favorably.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a mask plate and a method for measuring overlay accuracy. Background technique [0002] The manufacturing of integrated circuits is to map a series of circuit diagrams into multiple material layers by appropriate methods, and each layer has a certain physical relationship. Then, each layer must achieve alignment with the previous layer within a certain range, that is, inter-field overlay accuracy. At the same time, each layer has multiple exposure units after exposure, and the distance between each exposure unit The relationship between exposure units, that is, the overlay accuracy (intra-field overlay) between exposure units can also affect the quality of the product. With the development of large-scale integrated circuit technology, when the feature size (CD) is reduced to 32nm node and smaller, the overlay accuracy (overlay) has gradually become a bottleneck re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/42G03F7/20G03F9/00H01L21/66
Inventor 舒强黄宜斌
Owner SEMICON MFG INT (SHANGHAI) CORP
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