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Method for high volume electron beam lithography

A technology of electron beams and electrons, applied in the field of patterned substrates

Active Publication Date: 2016-08-17
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, manufacturing yield is a challenge in making ICs when using e-beam lithography systems

Method used

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  • Method for high volume electron beam lithography
  • Method for high volume electron beam lithography
  • Method for high volume electron beam lithography

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Embodiment Construction

[0039] The following invention provides many different embodiments or examples for implementing the different components of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, the following description in which a first component is formed over or on a second component may include embodiments in which the first component and the second component are formed in direct contact, and may also include embodiments in which additional components are formed on the first component and the second component. An embodiment between the second part such that the first part and the second part are not in direct contact. In addition, the present invention may repeat reference numerals and / or letters in each instance. This repetition is for the purposes of brevity and clarity and does not in itself dictate a relationship between the various ...

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Abstract

The present invention describes a method of patterning by an electron beam lithography system. The method includes receiving integrated circuit (IC) design layout data having polygons and inhibiting patterns, modifying the polygons and inhibiting patterns using electronic proximity correction (EPC) techniques, striping the modified polygons into sub-regions, converting the striped polygons into electron beams Writing the format data, and writing the polygon of the electron beam writing format on the substrate by the electron beam writing device. Striping the modified polygon includes finding the modified prohibition pattern as a reference layer, and stitching the modified polygon to avoid stitching the modified prohibition pattern. The present invention also provides methods for high volume electron beam lithography.

Description

technical field [0001] The present invention relates generally to the field of semiconductor technology, and more particularly to methods of patterning substrates. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid development. Technological advances in IC materials and design have produced multiple IC eras, where each era has smaller and more complex circuits than the previous era. During IC evolution, functional density (ie, the number of interconnected devices per chip area) typically increases, while geometry size (ie, the smallest component (or line) that can be created using a fabrication process) decreases. Such downscaling processes generally offer advantages by increasing throughput efficiency and reducing associated costs. This scaling down also increases the complexity of handling and manufacturing ICs, and similar developments in IC processing and manufacturing are required in order to achieve these advances. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/36G03F7/20
CPCH01J37/3174H01J37/3026H01J2237/31764H01J2237/31771G03F7/70475B82Y10/00B82Y40/00G03F1/36H01L21/0273G06F30/00
Inventor 王宏钧林子钦林家吉郑年富陈政宏黄文俊刘如淦
Owner TAIWAN SEMICON MFG CO LTD