Optical proximity effect correction method

Abstract

The invention discloses an optical proximity effect correction method comprising the following processes: 1) two test photolithography plates are made, a front-layer morphology pattern is placed on a first test photolithography plate, and a back-layer OPC (optical proximity correction) test pattern is placed on a second test photolithography plate; 2) the second test photolithography plat is gelatinized for exposure and development, and photolithography process key size values are collected for establishing an OPC model; 3) the first test photolithography plat is gelatinized for exposure and development to generate a front-layer pattern morphology; 4) the second test photolithography plat is gelatinized for exposure and development, and the photolithography process key size values are collected for establishing a selected bias algorithm (SSA) for characterization of different regional deviation values to be increased; and 5) in a region with the morphology, optical proximity correction (OPC) is redone according to the deviation values. According to the method, first the normal OPC model is established, when large-area morphology or substrate is changed, OPC test pattern data is again collected, a SSA form is established, and the optical proximity correction (OPC) is redone in the region with the morphology, so that photolithography line width drift and chip area waste caused by large-area morphology or substrate change can be avoided.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for correcting the optical proximity effect. Background technique [0002] In the semiconductor lithography process, in order to improve the resolution limit, the technology node of 0.13 microns starts to use the Optical Proximity Correction (OPC, Optical Proximity Correction) technology. Among them, the model-based OPC correction method is the main OPC correction method currently used. This method is to expose on the actual lithographic substrate with the best lithographic conditions, and then collect various test patterns (including one-dimensional and Two-dimensional graphics) lithography key dimension value, through these measured values ​​to establish a model of lithography process, to simulate the whole process of lithography, including exposure and development process. Then, according to the model calculation, the line width size of t...

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide an optical proximity effect correction method, which can solve the problem of photolithographic line width drift caused by large-area topography or substrate changes

Images