Bootstrap power-supply MOSFET/IGBT (metal-oxide-semiconductor field effect transistor/insulated gate bipolar translator) driving circuit with high negative voltage

A technology for driving lines and power supply lines, which is applied to electrical components, output power conversion devices, etc., can solve the problems of insufficient negative pressure, reduced negative pressure, and difficulty in realizing negative voltage shutdown, and achieves stable negative voltage values. The effect of reducing on-time and achieving reliable negative pressure shutdown

Inactive Publication Date: 2014-01-22
SHANDONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to solve the above problems, and propose a bootstrap power supply MOSFET / IGBT drive circuit with high negative voltage, which solves the problem that it is difficult to realize negative voltage shutdown on the basis of traditional bootstrap power supply, and the traditional negative voltage is not stable enough , as the power increases, the negative pressure decreases; it not only ensures the simplicity of the circuit, but also ensures the reliable shutdown of the power tube

Method used

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  • Bootstrap power-supply MOSFET/IGBT (metal-oxide-semiconductor field effect transistor/insulated gate bipolar translator) driving circuit with high negative voltage
  • Bootstrap power-supply MOSFET/IGBT (metal-oxide-semiconductor field effect transistor/insulated gate bipolar translator) driving circuit with high negative voltage
  • Bootstrap power-supply MOSFET/IGBT (metal-oxide-semiconductor field effect transistor/insulated gate bipolar translator) driving circuit with high negative voltage

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Embodiment Construction

[0033] Below in conjunction with accompanying drawing and embodiment the present invention will be further described:

[0034] figure 1 Shown is the traditional independent power supply negative voltage shutdown circuit diagram, the upper power tube and the lower power tube are independently isolated and powered separately, the power conversion system driving the line in this way usually contains multiple power tubes, which makes the auxiliary power supply line more demanding , the auxiliary power supply circuit is more complicated.

[0035] figure 2 Shown is the traditional bootstrap line power supply zero-voltage shutdown circuit diagram. The upper power tube is powered by a bootstrap voltage line. The circuit is relatively simple and the failure rate is relatively low. voltage, it is difficult to ensure the reliable shutdown of the power tube, and it is easy to cause false conduction due to interference.

[0036] Such as image 3 As shown, this line is mainly used for ...

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Abstract

The invention discloses a bootstrap power-supply MOSFET/IGBT driving circuit with a high negative voltage. The driving circuit comprises a superior power tube M1 driving circuit and an inferior power tube M2 driving circuit, wherein the superior power tube M1 driving circuit comprises a bootstrap power-supply circuit, a superior push-pull driving circuit, a superior negative voltage generation circuit and a superior protection circuit; and the inferior power tube M2 driving circuit comprises a low-voltage direct current stabilized power supply, an inferior push-pull driving circuit, an inferior negative voltage generation circuit and an inferior protection circuit. The driving circuit has the benefits as follows: the problem that negative voltage turn-off is difficult to realize on a traditional bootstrap power-supply basis is solved, and the problems that traditional negative voltages are not stable enough and the negative voltages are reduced along with the increase of power are solved; and both the conciseness of the circuit and the reliable turn-off of power tubes can be guaranteed.

Description

technical field [0001] The invention relates to a drive device for an IGBT or MOSFET gate circuit of a converter, in particular to a drive circuit for a MOSFET / IGBT powered by a bootstrap line with high negative voltage. Background technique [0002] The performance of the power converter is largely limited by the switching performance of the power switch tube MOSFET / IGBT (MOSFET: Metal-Oxide-Semiconductor-Field-Effect Transistor; IGBT: Insulated Gate Bipolar Transistor), so the drive of MOSFET / IGBT Circuits play an important role in power electronic systems. The improvement of the driving circuit of the power tube is mainly from the following aspects: [0003] (1) Reduce the switching time, thereby improving the efficiency of the power conversion system, such as active drive lines. [0004] (2) To improve the reliability of the circuit, the negative pressure is used to ensure the reliable shutdown of the switch tube, and the feedback of the detection signal of overvoltage...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08
Inventor 侯典立张庆范刘晓
Owner SHANDONG UNIV
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