Metal interconnection manufacturing method

Abstract

The invention provides a manufacturing method of metal interconnecting wires. The manufacturing method includes: forming a dielectric layer and a hard mask layer sequentially on a semiconductor substrate; etching the hard mask layer and the dielectric layer to form openings; cleaning the openings in a wet method; executing plasma treatment technology to smooth side walls of the openings; forming metal interconnecting wires in the openings. Since a plasma treatment step is added after the openings are formed by etching and before the metal interconnecting wires are formed in the openings, the side walls of the openings are smoothed, undercut defects are removed, filling effect of subsequent mask layers can be improved, and freeness of metal void defects of the metal interconnecting wires subsequently formed is guaranteed.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for manufacturing metal interconnection lines. Background technique [0002] The manufacturing technology of semiconductor devices is developing rapidly, semiconductor devices already have a deep submicron structure, and integrated circuits contain a huge number of semiconductor components. With the further development of semiconductor device manufacturing technology, high-performance, high-density connections between semiconductor devices are not only performed in a single interconnection layer, but also interconnected between multiple layers. Therefore, a multilayer interconnection structure is generally provided in which a plurality of interconnection layers are stacked on top of each other with a dielectric layer interposed therebetween for connecting semiconductor devices. [0003] The traditional metal interconnection is made of aluminum metal, but ...

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Problems solved by technology

[0007] 2) Improve the step coverage effect of the diffusion barrier layer and seed layer, for example, divide the original one-step deposition into several steps, and adjust the deposition process parameters to smooth the surface of the formed diffusion barrier layer and seed layer. However, this method is too time-consuming Long, not conducive to increasing production capacity;

[0010] However, none of the above methods are sufficient to completely avoid the generation of metal void defects

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