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Method for preparing vertical graphene-based thermal material

A heat-dissipating material, graphene technology, applied in the field of microelectronics, to achieve the effects of low requirements for preparation and transfer environment, speeding up heat dissipation efficiency, and easy operation

Active Publication Date: 2014-02-05
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the heat dissipation of hot spots of high-power chips, the previous heat dissipation method is mainly through thermal diffusion of hot spots, and then the heat is taken away by heat sinks with strong thermal conductivity, which cannot fundamentally solve the heat dissipation problem of hot spots

Method used

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  • Method for preparing vertical graphene-based thermal material
  • Method for preparing vertical graphene-based thermal material
  • Method for preparing vertical graphene-based thermal material

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Embodiment Construction

[0037] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0038] see Figure 1 to Figure 13 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed ar...

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Abstract

The invention provides a method for preparing a vertical graphene-based thermal material. The method comprises the following steps: (1) polishing a growing substrate, and washing; (2) putting the growing substrate in a reaction cavity, vacuumizing the reaction cavity, introducing reducing gas, heating to a preset temperature, and performing plasma pretreatment on the growing substrate; (3) growing a vertical graphene film on the surface of the growing substrate by adopting a plasma enhanced chemical vapor deposition method; (4) transferring the prepared vertical graphene film to a transfer target. According to the method, transverse radiation of the horizontal film layer and longitudinal radiation caused by larger specific surface area in the vertical direction of the vertical graphene film can be sufficiently played, and heat of a high power chip in the horizontal direction is diffused to the surrounding environment through a high specific surface area, so that the radiation efficiency is accelerated. In the method, the transfer technology of the vertical graphene film is studied, and the vertical graphene film can be conveniently applied various situations.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a preparation method of a heat dissipation material based on vertical graphene. Background technique [0002] With the development of high performance, miniaturization, multi-function and low cost of microelectronic products, the problem of electronic heat dissipation has become a bottleneck restricting the development of the electronic industry. In order to solve the heat dissipation problem of high-power devices, the research of high-performance heat-conducting materials is imminent. At present, in addition to metals (such as copper, thermal conductivity K=400W / m·K), people are also actively looking for new high-performance thermal conductivity materials for heat dissipation in semiconductor chips. The research on carbon nanomaterials has always been the field of heat dissipation research. Among all the carbon structures, the new two-dimensional crystal material repre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C09K5/14C01B32/186
Inventor 王浩敏王玲张燕刘建影谢晓明
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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