High-overload-resistant micro electro mechanical system (MEMS) gyroscope
A gyroscope and silicon wafer technology, applied in the field of MEMS gyroscope anti-high overload structure, can solve problems such as weak protection, and achieve the effects of improving high anti-overload capability, simple processing technology and simple structure
Active Publication Date: 2014-02-05
EAST CHINA INST OF OPTOELECTRONICS INTEGRATEDDEVICE
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Problems solved by technology
[0004] The purpose of the present invention is to solve the problem that the existing MEMS gyroscope device has a rigid collision overload protection design structure, and provide a MEMS gyroscope with simple structure, low cost and good stability against high overload
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[0018] The structure and manufacturing process of the present invention will be further described below in conjunction with the accompanying drawings.
[0019] (1) MEMS gyro anti-high overload structure
[0020] refer to figure 1 , figure 2 The MEMS anti-high overload gyroscope structure of the present invention can be divided into three layers in terms of manufacturing process: a substrate layer 8 , a structure layer 11 and a cap layer 10 . Connecting beam 1, center fixing block 2, fixing block 3, anti-collision bump 4, anti-collision bump 5, mesh cavity mass block 6, and anchor point 7 all belong to the structural layer; glass sheet 8 constitutes the substrate layer; single crystal The silicon chip 11 constitutes the cap layer, and the single crystal silicon chip 11 is bonded and connected with the cap 10 by benzocyclobutene (BCB) 9 .
[0021] The grid cavity mass 6 is fixed to the anchor point 7 through the connecting beam 1, and the fixed blocks 3 with anti-collision...
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The invention relates to a high-overload-resistant micro electro mechanical system (MEMS) gyroscope. A mass block (6) is arranged in a silicon wafer and is fixedly supported to an anchor point (7) through a connecting beam (1); fixed blocks (3) with anti-collision bumps (4) are symmetrically distributed around the mass block (6); a central fixed block (2) with anti-collision bumps (5) is arranged in a central hollowed area of the mass block (6). The high-overload-resistant MEMS gyroscope is characterized in that a group of grid cavities (6a) are formed in the mass block (6). The high-overload-resistant MEMS gyroscope has the advantages that functions of an elastic overload protection surface are realized in a collision process of the side wall of the mass block with the grid cavities; under the combined action of the elastic overload protection surface and the anti-collision bumps, high impact force generated by high impact can be released, so that the sensitive structure of a device is effectively protected, and the high overload resistance of the device is improved. The high-overload-resistant MEMS gyroscope is simple in structure and process and suitable for large-batch production; by virtue of a single crystal silicon wafer material, the consistency and the reliability of an MEMS gyroscope product are improved.
Description
technical field [0001] The invention belongs to the technical field of micromechanical electronics. Specifically, it is a MEMS gyro anti-high overload structure. Background technique [0002] Due to its small size, light weight, low cost, and low power consumption, MEMS gyroscopes have been widely used in aviation, aerospace, navigation, automobiles, biomedicine, environmental monitoring and other fields. Under severe conditions such as high-impact environments, MEMS gyroscopes can be subjected to shock accelerations of thousands of g or even tens of thousands of g. For MEMS gyroscopes with movable structures (sensitive structures), the The shock acceleration has a certain range, and when the shock acceleration exceeds this range, an "overload" occurs. The movable structure (sensitive structure) of the MEMS gyroscope is easily damaged without an overload protection structure, resulting in device failure, which affects the reliability of the entire system. Therefore, the mo...
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IPC IPC(8): G01C19/56
CPCG01C19/56
Inventor 陈璞郭群英黄斌王鹏陈博王文婧何凯旋刘磊徐栋吕东锋庄须叶
Owner EAST CHINA INST OF OPTOELECTRONICS INTEGRATEDDEVICE