Dumet wire microwave-heating wire-passing device

Abstract

The invention discloses a Dumet wire microwave-heating wire-passing device. The wire-passing device is arranged between a wire feeding device of a Dumet wire microwave-heating production system and a microwave oxidizing furnace, or between the microwave oxidizing furnace and a microwave sintering furnace, or between the microwave sintering furnace and a wire collecting device; the wire-passing device comprises a wire pressing wheel, two guide wheels, a piston, a cylinder sleeve, a spring and a proximity switch, wherein a sintered ceramic tube is connected with the wire collecting device by passing through the guide wheel, the wire pressing wheel and the other guide wheel in sequence; the wire pressing wheel is hinged on the piston; a fed wire is pressed on the wire pressing wheel by the guide wheels at the two sides of the wire pressing wheel, so that the piston is in an up-down movement state in the cylinder sleeve through the spring; the spring moves up and down, so that the proximity switch at the bottom end of the spring is in a state of switching on or switching off microwave generators of the microwave sintering furnace and the microwave oxidizing furnace; the Dumet wire material prepared by the system has no CuO generated on the outer layer, has no chromatic aberration and no air bubbles in subsequent platinum glass fusing-sealing, and has high quality performance.

Description

Technical field [0001] The invention relates to a dumet wire manufacturing system, in particular to a dumet wire that utilizes microwave heating, oxidation and sintering, to rapidly generate Cu in iron-nickel alloy copper-plated dumet wire 2 The bare wire passing device in the Dumet wire microwave heating production system on the O level. Background technique [0002] Ordinary red, yellow, boron-free dumet wire, forming Cu 2 During O process, it is always at H 2 Or use ordinary power frequency electric furnace to heat to 800-1380℃ in the environment of liquefied petroleum gas. This slow heating time process can easily affect the air tightness, storage conditions and surface color difference of the finished Dumet silk. Afterwards, it is coated with boron and sintered to protect Cu 2 At the O level, there is sodium ion contamination on Dumet for semiconductor devices, thus forming Dumet products for the light and power markets. [0003] The existing patent number 00112365.3 disclose...

AI Technical Summary

Problems solved by technology

[0005] turns into red Cu 2 O and released O 2 Causes bubbles to form around the Dumet wire fused in the platinum group glass, thereby affecting the airtightness; in addition, when feeding the bare wire for heating and reduction, such as wire feeding failure or accidental wire breakage, it is easy to form no-load heating , resulting in energy waste and unstable performance

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