IGBT module and span bridge electrode used for same

Abstract

The invention discloses an IGBT module and a span bridge electrode used for the IGBT module. The IGBT module comprises at least two IGBT module subunits, wherein each IGBT module subunit comprises a DBC substrate provided with a reserved connecting area, each reserved connecting area comprises a first fixedly connecting part, a second fixedly connecting part, a span bridge, the first fixedly connecting parts and the second fixedly connecting parts are located at the two ends respectively, the span bridges are located between the first fixedly connecting parts and the second fixedly connecting parts and extend in a protruding mode in the axial direction, and the first fixedly connecting parts and the second fixedly connecting parts are fixedly connected with the reserved connecting areas on the different DBC substrates. The connecting areas, needing to be reserved, of the DBC substrates are effectively reduced, series connection and / or parallel connection among the different IGBT module subunits are effectively completed, the quality of series connection and / or parallel connection among the different IGBT module subunits is improved, and the electrical performance of the IGBT module is effectively ensured.

Description

technical field [0001] The invention belongs to the field of IGBT module manufacturing, and in particular relates to a bridge electrode for an IGBT module and an IGBT module, and is especially suitable for the series connection and connection between different IGBT module subunits with complex structure design and small reserved connection area of ​​the DBC substrate. / or connected in parallel. Background technique [0002] The IGBT module (Insulated Gate Bipolar Transistor, Chinese translation is an insulated gate bipolar transistor) is a device composed of a MOSFET and a bipolar transistor. Its input is a MOSFET and its output is a PNP transistor. It combines the advantages of these two devices. It not only has the advantages of small driving power and fast switching speed of MOSFET devices, but also has the advantages of low saturation voltage and large capacity of bipolar devices. Its frequency characteristics are between MOSFETs and power transistors. , the normal oper...

AI Technical Summary

Problems solved by technology

[0005] 1. The process of ultrasonic bonding with multiple aluminum wires is cumbersome and costly;

[0006] 2. Furthermore, since the prior art uses multiple aluminum wires for ultrasonic bonding, the aluminum wires not only occupy the reserved connection area on the DBC substrate, but also the distance between the aluminum wires will occupy the reserved connection area, and even Occupies more reserved connection area, especially the structural design of the internal subunit of the IGBT module is complex, and its DBC substrate may not be able to reserve enough connection area for multiple aluminum wire bonding due to size constraints, and the aluminum wire The current carrying capacity is constant, so when the current capacity level of the IGBT module subunit is required to be high, the area of ​​the reserved connection area for aluminum wire bonding on the DBC substrate is too small, which will make the number of aluminum wire bonding It is severely restricted, resulting in the impact of the connection quality between two or different IGBT module subunits, which in turn leads to a reduction in the life of the IGBT module and affects the electrical performance of the IGBT module

Images