A light-emitting device with double stacked electrodes

A light-emitting device and stacking technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of lowering the light output performance of semiconductor light-emitting devices, reducing the reflectivity of contact electrodes, etc., so as to enhance the ohmic contact performance and improve the light output characteristics. , the effect of improving the luminous efficiency

Active Publication Date: 2016-07-13
LIYANG TECH DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the difference in surface energy, a coalescence effect occurs between the contact electrode and the semiconductor during annealing, resulting in the formation of multiple voids at the interface between the semiconductor and the contact electrode, and the presence of such voids reduces the reflection of the contact electrode efficiency, which reduces the light output performance of semiconductor light emitting devices

Method used

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  • A light-emitting device with double stacked electrodes
  • A light-emitting device with double stacked electrodes

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Embodiment Construction

[0016] see figure 1 , the double-stacked electrode light-emitting device proposed by the present invention has a sapphire substrate 11; on the sapphire substrate 11, there are a low-temperature buffer layer 12, an n-type doped layer 13, a multi-quantum well layer 14, a p-type doped layer 15, Stacked p-electrodes 20; wherein the n-type doped layer 13 has a stepped structure, and stacked n-electrodes 30 are formed on the stepped structure.

[0017] Wherein, the n-type doped layer 13 is made of Al 0.05 In 0.05 Ga 0.9 N is formed, and the p-type doped layer 15 is made of Al 0.1 In 0.05 Ga 0.85 N is formed; the multi-quantum well layer 14 is n-Al 0.045 In 0.055 Ga 0.9 N-tier and n-AI 0.045 In 0.055 Ga 0.9 A periodic structure formed by alternating P layers, with a layer of n-Al 0.045 In 0.055 Ga 0.9 N-layer and one-layer n-AI 0.045 In 0.055 Ga 0.9 As a cycle, P forms 20-30 cycles, preferably 22, 25, and 28 cycles;

[0018] see figure 2 , the stacked p-electrode ...

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Abstract

The invention discloses a double-laminated-layer electrode light-emitting device which is characterized by being provided with a sapphire substrate. A low-temperature buffer layer, an n-type doping layer, a multi-quantum-well layer, a p-type doping layer and a laminated p electrode are sequentially arranged on the sapphire substrate, wherein the n-type doping layer is of a step structure, a laminated n electrode is arranged on the step structure, and the laminated p electrode and the laminated n electrode are of the same structure.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light-emitting devices, in particular to a high-brightness light-emitting device with double stacked electrodes. Background technique [0002] Semiconductor light-emitting devices are increasingly widely used, especially in the trend of replacing incandescent and fluorescent lamps in lighting, but they still face some technical problems, especially the low light extraction efficiency. This leads to defects such as insufficient luminance of the light emitting device. [0003] A conventional semiconductor light emitting device (such as an LED) includes a semiconductor layer light emitting unit sequentially formed on a sapphire substrate and a contact electrode on the semiconductor light emitting unit. Generally speaking, a single-layer metal material is generally used for the contact electrode, and an ohmic contact is formed by contacting the semiconductor with the single-layer metal material...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/40
CPCH01L33/06H01L33/32H01L33/38H01L33/40H01L33/405H01L33/42
Inventor 丛国芳
Owner LIYANG TECH DEV CENT
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