Method for preparing metal electrode on grapheme conductive film

A graphene film and metal electrode technology, which is applied in metal material coating process, electrical digital data processing, input/output process of data processing, etc., can solve problems such as low efficiency, inability to realize metal film, and affecting service life. Achieve the effects of simplifying the manufacturing process, reducing the process of high-temperature baking and curing slurry, and improving applicability

Inactive Publication Date: 2014-02-26
2D CARBON CHANGZHOU TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] (1) ITO is very brittle and brittle, and it is easy to be worn or cracked or peeled off during bending, which will affect the service life, especially when the plastic substrate is used as the base material, this problem is more prominent;
[0005] (2) After the ITO film is formed, high temperature treatment is required to achieve high conductivity. When using a plastic substrate, due to the limitation of the processing temperature, the conductivity and transparency of the film are low;
[0006] (3) Affected by raw materials, production equipment and processes, the price of ITO film is expensive
However, the vacuum coating process is costly and inefficient, and cannot achieve selective deposition of metal films
Moreover, high temperature baking is required in the screen printing process, and such high temperature will reduce the transmittance of PET (polyethylene terephthalate), cause deformation and yellowing, and affect the square resistance of graphene. Enables selective deposition of metal films

Method used

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  • Method for preparing metal electrode on grapheme conductive film
  • Method for preparing metal electrode on grapheme conductive film
  • Method for preparing metal electrode on grapheme conductive film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] 1) The preparation of graphene on the growth material is carried out by chemical vapor deposition (CVD), using argon and nitrogen as protective gases, and methane and hydrogen are deposited at 1000 ° C, and then cooled to room temperature in the protective gas after deposition, Transfer graphene to the 188 μm PET base layer by thermal tape, and remove the growth material by etching, so that graphene is transferred to the base layer, as shown in figure 1 Structure.

[0050] 2) Using a 1064nm, M^2 figure 2 Structure.

[0051] focus height

energy

speed

frequency

Number of passes

23.815mm

7W

2500

200K

1

[0052] 3) Paste a protective layer on the part that does not need metal electrodes. The material of the protective layer is PET, and the adhesive layer is silica gel. image 3 Structure.

[0053] 4) Plating a layer of metal electrodes on the unprotected part by electroless plating.

[0054] The electroless plating ...

Embodiment 2

[0065] 1) The preparation of graphene on the growth material is carried out by chemical vapor deposition (CVD), using argon and nitrogen as protective gases, methane and hydrogen are deposited at 1000 ° C, and after deposition, it is cooled to room temperature in protective gas. Transfer graphene to the PET base layer of 188 μm by PMMA binder, remove the growth material by bubble stripping method, transfer graphene to the base layer, and obtain the following: Figure 6 Structure.

[0066] 2) A protective layer is attached to the part that does not require metal electrodes. The material of the protective layer is PET, and the adhesive layer is silicone. get as Figure 7 Structure.

[0067] 3) Plating a layer of metal electrodes on the unprotected part by means of electroplating.

[0068] The electroplating solution formula and process used are:

[0069] Nickel sulfate: 250g / L

[0070] Nickel chloride: 40g / L

[0071] Boric acid: 40g / L

[0072] Temperature: 55℃~65℃

[007...

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Abstract

The invention provides a method for preparing metal electrode on grapheme conductive film, which comprises the following steps: 1) providing grapheme on a substrate; 2) depositing a metal layer on surface of grapheme film by electroplate or chemical plating; 3) patterning the grapheme before the step 2; or patterning the grapheme film and the metal layer after the step 2. The invention also provides a grapheme conductive film with metal electrode prepared by the method.

Description

technical field [0001] The invention relates to a graphene conductive film with metal electrodes and a preparation method thereof, belonging to the application field of graphene materials and the field of capacitive touch screen preparation. Background technique [0002] The touch screen is an input device that can realize the interaction between human beings, computers and other devices. The touch screen is generally provided with a transparent conductive film as a touch sensing unit, its function is to allow light to pass through, and itself can be used as a conductive electrode layer. As a transparent conductive film, an ITO (Indium Tin Oxide) film layer has been applied in the industry, which can be plated by PVD (Physical Vapor Deposition), for example, by sputtering. [0003] Although the conductivity and transparency of the ITO film prepared by the existing process can basically meet the needs of some electronic products, the application of the ITO transparent conduc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/36C23C16/26C23C16/01C25D3/12C25D5/02C25D5/54G06F3/041
Inventor 彭鹏金虎武文鑫周振义
Owner 2D CARBON CHANGZHOU TECH INC
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