Method and device for measuring temperature rising and heat resistance of Schottky grid field effect transistor

Abstract

The invention provides a method and device for measuring temperature rising and heat resistance of a Schottky grid field effect transistor and belongs to the technical field of semiconductor device measuring in the micro electronic technique. According to the method and device, a rapid selector switch controlled through control signals is designed; time delay converted from being negatively biased to being positively biased of grid voltage is cut off by drain-source voltage, and the time delay is accurately set and output by an FPGA control module; under a forward direction testing current, a steady-state process of Schottky junction voltage is related to capacitance of the device and the testing current value, the establishment process of the junction voltage at a constant-temperature is adopted to serve as constant-temperature reference junction voltage, and time delay errors of temperature rising under small computing operation are reduced; by adopting an FPGA, the functions of collecting and setting drain-source voltage, drain-source currents and gate-to-source voltage are designed, the function of feedback at the time less than a millisecond level can be achieved, and the device can be effectively protected against burning brought by vibration or misoperation.

Description

Technical field: [0001] The technology belongs to the field of semiconductor device measurement technology in microelectronic technology. The invention is mainly used in the measurement of the working temperature rise and thermal resistance of semiconductor Schottky junction devices (semiconductor GaAs, GaN and SiC MESFET power microwave devices). Background technique: [0002] Semiconductor devices, especially power semiconductor devices, will generate a lot of heat when they are working, causing the temperature of the active area of ​​the device to rise. This will accelerate the performance deterioration of the semiconductor device. For example, the working life is shortened and the performance of the device is deteriorated. The factors affecting the temperature rise of semiconductor devices are related to the heat generated when the device is working on the one hand; on the other hand, it is related to the heat dissipation characteristics of materials in each link durin...

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Problems solved by technology

However, before the drain-source voltage is removed, the gate voltage starts to change from reverse bias to forward bias, which will damage or even burn the device.

However, if the conversion process is too slow, the temperature of the active area will drop, which will affect the temperature accuracy of the acquisition.

[0005] In the prior art, some adopt the fully open gate mode, and use the drain-source voltage and current to generate equivalent power to measure the temperature rise. For some devices that normally work under reverse bias, the result is not the temperature rise in the working state.

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