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Breeding method for improving mutation frequency of silkworms

A technology of mutation frequency and silkworm, which is applied in animal husbandry and other fields, to achieve the effect of increasing the mutagenesis base, increasing the variety of mutations, and shortening the processing time

Inactive Publication Date: 2014-03-12
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But so far, there is no method for local irradiation mutagenesis of the reproductive nest of silkworm by using heavy ion rays.

Method used

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  • Breeding method for improving mutation frequency of silkworms
  • Breeding method for improving mutation frequency of silkworms
  • Breeding method for improving mutation frequency of silkworms

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Example 1: 12 C 5+ Ion ray irradiated the 4th instar and 3rd day larval gonad of silkworm to produce mutants:

[0031] (1) Preparation for experimenting with silkworms

[0032] The hatched larvae of the silkworm variety (pnd) were reared with mulberry leaves, and the larvae on the 3rd day of the 4th instar were taken for irradiation (ie, as larvae to be treated).

[0033] (2) Local irradiation method

[0034] First, on a 2.0mm thick acrylic resin plate, make an 8×4mm hole (square hole) that matches the shape and size of the genital nest of the 4th instar 3rd day larvae (located on the back of the 5th abdominal segment); Align the existing part of the reproductive nest with the hole, and use scotch tape to fix the larva part on the experimental bench for irradiation, and use 18.3MeV / u carbon ion ( 12 C 5+ ) ray for irradiation, the underwater range of the carbon ion ray is about 1.1 mm, and the thickness of the resin plate is 2.0 mm, therefore, the carbon ion ray ca...

Embodiment 2

[0047] Example 2: 12 C 5+ Mutants Produced by Ion Ray Irradiation in the 4th Instar and 3rd Day Larva Gonad of Bombyx mori

[0048] (1) Preparation for experimenting with silkworms

[0049] The hatched larvae of the silkworm variety (pnd) were reared with mulberry leaves, and the larvae on the 3rd day of the 4th instar were taken for irradiation (ie, as larvae to be treated).

[0050] (2) Local irradiation method

[0051] First, on a 2.0mm thick acrylic resin plate, make an 8×4mm hole that matches the shape and size of the genital nest of the 4th instar 3rd day larvae (existing on the back of the 5th abdominal segment); Align the hole, and use scotch tape to fix the larva part on the experimental table for irradiation, and use 18.3MeV / u carbon ion ( 12 C 5+ ) ray for irradiation, the underwater range of the carbon ion ray is about 1.1 mm, and the thickness of the resin plate is 2.0 mm, therefore, the carbon ion ray cannot pass through the acrylic resin plate. The irradiati...

Embodiment 3

[0064] Example 3: 12 C 5+ Ion Irradiation of Mature Silkworm (Female) Gonads Produces Mutants

[0065] (1) Preparation for experimenting with silkworms

[0066] Larvae hatched from silkworm species (pnd) were reared on mulberry leaves, and mature female silkworms were taken for irradiation (i.e., as untreated silkworm larvae).

[0067] Remarks: When silkworms develop to the first day of the 5th instar, males and females can be identified, and then the males and females are reared separately. Ripe silkworm is a technical term for silkworms when they are mature, which means that the silkworm body is transparent and begins to spin silk. Female cooked silkworm refers to a cooked silkworm whose sex is female.

[0068] (2) Local irradiation method

[0069] First, on a 2.0mm thick acrylic resin plate, make a 12×6mm hole that matches the shape and size of the mature silkworm reproductive nest (existing on the back of the fifth abdominal segment); align the reproductive nest with ...

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Abstract

The invention discloses a breeding method for improving the mutation frequency of silkworms. The breeding method includes the following steps that first, silkworm larvae at all developmental stages from four-instar third-day larvae to matured silkworms are taken as silkworm larvae to be handled; second, irradiation holes matched with conceptacle portions of the silkworm larvae to be handled in shape and size are manufactured in a baffle plate of the thickness of 1.5-2.5mm, and then the irradiation holes are aligned with the conceptacle portions of the silkworm larvae to be handled; the conceptacle portions of the silkworm larvae to be handled are irradiated by rays for irradiation through the irradiation holes; third, the irradiated larvae and the control larvae which are not irradiated are bred with the same method, and the matured silkworms are made to spin, spin cocoons and undergo eclosion; fourth, the irradiated eclosion larvae are made to mate with eclosion matured silkworms which are not irradiated, and eggs are laid; mutations of the next generation of bred irradiated silkworms are selected.

Description

technical field [0001] The invention belongs to the technical field of mutation breeding and relates to a silkworm mutation breeding method for increasing mutation frequency. Background technique [0002] Mutagenesis is a basic method to regulate and produce mutations in genetic genes. Mutagenesis can induce mutations in silkworm genes, promote genetic recombination, and expand genetic variation. It is one of the effective ways to create new germplasm and breed new varieties. At present, the commonly used method is to use physical, chemical and other mutagenic factors to achieve. Among them, the physical mutagenesis factor is mainly to directly irradiate silkworm organisms with high-energy rays, but the disadvantages of this method are that the lethality caused by irradiation is too high, the mutation frequency is too low, and the mutants are stable due to physiological damage caused by irradiation. The property of chemical mutagenesis is not good; the chemical mutagenesis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): A01K67/04
Inventor 屠振力
Owner ZHEJIANG UNIV
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