Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method and measuring device for detecting molten silicon liquid level of a single crystal silicon crystal pulling furnace

A technology of liquid level detection and measurement device, which is applied in the fields of self-melting liquid pulling method, single crystal growth, chemical instruments and methods, etc.

Active Publication Date: 2016-05-04
XIAN DEWUTUO AUTOMATION TRANSMISSION SYST CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the commonly used eddy current detection method and capacitance detection method cannot be applied to the liquid level detection system.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and measuring device for detecting molten silicon liquid level of a single crystal silicon crystal pulling furnace
  • Method and measuring device for detecting molten silicon liquid level of a single crystal silicon crystal pulling furnace
  • Method and measuring device for detecting molten silicon liquid level of a single crystal silicon crystal pulling furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] The present invention will be further described in detail below in conjunction with specific embodiments, which are explanations of the present invention rather than limitations.

[0036] The triangular displacement measurement method is named because the incident light and the reflected light form a triangle. Its principle is to emit a beam of light from the light source to the surface of the measured object, and observe the reflected light through imaging in another direction and position. The position of the point, so that the displacement of the surface of the measured object can be obtained.

[0037] see Figure 1 to Figure 6 , a method for detecting the molten silicon liquid level of a single crystal silicon crystal pulling furnace in the present invention, a line laser and a camera are installed on the observation port of the single crystal silicon furnace, and the laser beam emitted by the laser is irradiated to the heat shield of the crystal pulling furnace thr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method and a device for detecting a molten silicon liquid level of a monocrystalline silicon crystal pulling furnace. The method comprises the following steps: installing a liner laser and a camera at a viewing port of a single crystal furnace, and slantly irradiating a liner laser beam from the viewing port of the crystal pulling furnace onto a heat shield and a molten silicon liquid level, wherein the molten silicon liquid level performs mirror reflection on the laser beam irradiated thereon, a reflected light beam is projected onto the heat shield, and the projective light beam on the heat shield also can be projected onto the molten silicon liquid level. Along with change of the molten silicon liquid level, a contact point of the laser beam and the molten silicon liquid level also changes, so that the distance from the reflected light beam on the heat shield to the projection on the molten silicon liquid level also changes, therefore, positions of pixels of the light beam received by the camera are changed; actual liquid level change information can be obtained by calibrating position change of a pixel between two projection points on an image and the actual position change of the molten silicon liquid level.

Description

technical field [0001] The invention relates to a method for detecting the liquid level of molten silicon in a non-contact crystal pulling furnace, in particular to a method for detecting the liquid level of molten silicon in a single crystal silicon pulling furnace and a measuring device based on the method. Background technique [0002] The Czochralski method uses the condensation crystallization driving principle of the melt. At the interface between solid and liquid, the phase change from liquid to solid occurs due to the temperature drop of the melt. Single crystal silicon grown by the Czochralski method has a high oxygen content and a large diameter, which is a method widely used at present. However, this method imposes strict requirements on the growth environment of the single crystal. With the continuous growth of monocrystalline silicon solids, the volume of molten silicon in the crucible gradually decreases, and the liquid level of molten silicon continues to drop...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/26
Inventor 杨欣王军会何茜奈斌
Owner XIAN DEWUTUO AUTOMATION TRANSMISSION SYST CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com