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Method for improving uniformity of oxide layer on surface of amorphous silicon

A technology of surface oxidation and amorphous silicon, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve problems such as difficult control of uniformity, and achieve the effect of improving uniformity and buffering energy

Inactive Publication Date: 2014-03-19
EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD
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Problems solved by technology

[0004] The existing surface oxide layer technology is mainly based on the surface treatment of silicon wafers with a small area. In the OLED field, the size of 4.5-generation silicon wafers (920mm*730mm) is already 20 times that of ordinary semiconductor 8-inch silicon wafers. The larger the surface area, the greater the influence of the uniformity of the surface oxide layer, and the more difficult it is to control the uniformity; therefore, in the polysilicon preparation technology of OLED (including LTPS), how to control the uniformity of the large-area oxide layer to prepare uniformity High polysilicon has become a top priority

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  • Method for improving uniformity of oxide layer on surface of amorphous silicon

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Embodiment

[0038] At room temperature, use a hydrofluoric acid solution with a concentration of 0.5% to clean the amorphous silicon wafer for 40 seconds to etch and remove the uneven oxide layer on the surface of the amorphous silicon; Hydrofluoric acid on the surface of the silicon wafer; after water cleaning, the water remaining on the surface of the silicon wafer will form a water film, use clean N 2 Dry the silicon wafer to remove the water film on the surface of the silicon wafer, N 2 The flow rate is 400NL / min, and the duration is 5s; then, use ozone water with a concentration of 15ppm to clean the silicon wafer for 40s to oxidize the silicon wafer, and use uniform techniques such as shaking and rotation to form a uniform Oxide layer; finally, the silicon wafer is spin-dried, and the rotating speed is kept at 300 rpm for 60 seconds. Since the interference of the water film is eliminated, after drying, a layer of uniform oxide layer is formed on the surface of the amorphous silicon....

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Abstract

The invention provides a method for improving uniformity of an oxide layer on a surface of amorphous silicon, the method comprising the steps of a) cleaning amorphous silicon with hydrofluoric acid; b) cleaning the amorphous silicon with water; c) removing a water film on the surface of the amorphous silicon; d) cleaning the amorphous silicon with an oxidizing solution; and e) conducting drying treatment for the silicon wafer. By introducing the water film removal step after replacement of the hydrofluoric acid by water, the method, provided by the invention, enables the oxidizing solution to promptly and uniformly contact the amorphous silicon for oxidation treatment and a uniform oxide layer to be generated on the surface of the amorphous silicon, so that energy can be well buffered during ELA crystallization and uniform polysilicon of high quality is prepared.

Description

technical field [0001] The invention relates to a method for improving the uniformity of an oxide layer on the surface of amorphous silicon, in particular to a method for improving the uniformity of the oxide layer on the surface of amorphous silicon before excimer laser crystallization in the field of OLED (organic light emitting diode). Background technique [0002] In the field of semiconductor preparation, the amorphous silicon prepared by CVD (chemical vapor deposition method) forms an uneven oxide layer on its surface through natural oxidation, which makes the uniformity and quality of the amorphous silicon surface poor; in order to obtain The oxide layer with better quality, the existing treatment method for the oxide layer on the surface of amorphous silicon is: use hydrofluoric acid to remove the oxide layer with poor quality on the surface of the silicon wafer, wash the silicon wafer with water to remove the residual hydrofluoric acid on the surface, and after The ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3105H01L51/56
CPCH01L21/0209H01L21/02096
Inventor 任东
Owner EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD
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