Method for improving uniformity of oxide layer on surface of amorphous silicon
A technology of surface oxidation and amorphous silicon, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve problems such as difficult control of uniformity, and achieve the effect of improving uniformity and buffering energy
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[0038] At room temperature, use a hydrofluoric acid solution with a concentration of 0.5% to clean the amorphous silicon wafer for 40 seconds to etch and remove the uneven oxide layer on the surface of the amorphous silicon; Hydrofluoric acid on the surface of the silicon wafer; after water cleaning, the water remaining on the surface of the silicon wafer will form a water film, use clean N 2 Dry the silicon wafer to remove the water film on the surface of the silicon wafer, N 2 The flow rate is 400NL / min, and the duration is 5s; then, use ozone water with a concentration of 15ppm to clean the silicon wafer for 40s to oxidize the silicon wafer, and use uniform techniques such as shaking and rotation to form a uniform Oxide layer; finally, the silicon wafer is spin-dried, and the rotating speed is kept at 300 rpm for 60 seconds. Since the interference of the water film is eliminated, after drying, a layer of uniform oxide layer is formed on the surface of the amorphous silicon....
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