A method for reducing errors in the observation of wafers by an electron microscope

Abstract

The invention relates to the field of large scale integrated circuit manufacturing, and especially relates to a method for reducing errors in the observation of wafers by an electron microscope. Wafer parameters are directly introduced into the electron microscope in order to define various information of a chip; then data defined through the electron microscope is transmitted and saved in a database; and finally, when a defect detection device creates a defect detection program, the information about the chip on a wafer is called in the database so as to substantially reduce errors of observation of defects via the employment of the electron microscope, so that the accuracy of the observation is ensured.

Description

technical field [0001] The invention relates to the field of large-scale integrated circuit manufacturing, in particular to a method for reducing errors in wafer defect observation by an electron microscope. Background technique [0002] The manufacturing process of integrated circuits is mainly to use various methods to form different "layers" on the substrate material (such as silicon substrate), and to dope ions in selected areas to change the conductivity of semiconductor materials and form process of semiconductor devices. [0003] Among them, a combination of various individual processes is mainly used to carry out the manufacturing process of the above-mentioned integrated circuit. The various individual processes mainly include three types of processes: thin film preparation process, pattern transfer process and doping process. [0004] At present, in order to meet the computing requirements of the complex functions of the chip, the critical dimensions of the circui...

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Problems solved by technology

[0010] Finally, after superimposing all the above errors (H, W) and other system intrinsic errors T, it will cause great difficulties when the electron microscope needs to observe small defects at a large magnification; Image 6 It is a schematic diagram of electron microscope observation of defects in traditional defect detection methods, such as Image 6 As shown, when using electron microscope for direct observation, there is a certain distance error between defect 1 and the center position 2 of the observation area (such as Image 6 6μm as shown), which reduces the accuracy of defect observation. If the distance error is too large, it will even exceed the observed area, and the defect detection cannot be completed

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