Plasma generation power supply device and plasma generation parameter setting method
A plasma and power supply device technology, applied in the field of manufacturing semiconductor integrated circuit devices, can solve the problems of ashing device processing efficiency (flow rate reduction, component life shortening, etc.)
Active Publication Date: 2016-03-23
KOKUSA ELECTRIC CO LTD
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Problems solved by technology
If the time until impedance matching is prolonged, the output circuit elements of the high-frequency power supply are exposed to reflected waves from the load for a long time, thereby receiving stress (heat damage) and shortening the life of the elements
In addition, if the time until impedance matching is prolonged, the processing efficiency (flow rate) of the ashing device will decrease
Method used
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[0027] Next, embodiments of the present invention will be described with reference to the drawings. In the embodiment of the present invention, a power supply device for generating plasma used as a plasma ashing device of a semiconductor manufacturing device is shown as an example. figure 1 It is a vertical cross-sectional view showing the plasma processing unit 10 used in the plasma ashing apparatus according to the embodiment of the present invention.
[0028] The plasma processing unit 10 is a plasma processing unit of a high-frequency electrodeless discharge type for ashing a semiconductor substrate or a semiconductor element by dry processing. Plasma processing unit 10 such as figure 1 As shown, it includes a space for generating plasma, that is, a plasma generation space 30, a processing space 45 for accommodating a wafer 20 such as a semiconductor substrate, a first exhaust chamber 74 below the processing space 45, a second exhaust chamber 76, and a resonant coil. 32 ...
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The present invention provides a power supply device for plasma generation capable of shortening the time until impedance matching and improving processing efficiency. This power supply device for generating plasma includes: a reference signal generation unit that generates a reference signal of a predetermined frequency; a power amplification unit that amplifies the power of the reference signal to generate a high-frequency power signal; Included traveling wave power and reflected wave power; the control section, which changes the frequency of the reference signal, and changes the amplification factor in the power amplifying section, wherein the following plasma generation operation is performed, that is, at the first time, performing The control is such that the reference signal is fixed at the first frequency and the reflected wave power becomes below the first power value, and at a second time thereafter, the frequency of the reference signal is scanned so that the reflected wave power becomes below the second power value, and the second power value is found. A plasma generation parameter setting action of optimal values of frequency, first time, and second time.
Description
technical field [0001] The present invention relates to a high-frequency power supply device used to generate plasma, that is, a power supply device for plasma generation, and a method for setting plasma generation parameters. ) in a plasma processing apparatus for performing plasma processing such as plasma ashing on a substrate, a power supply device for plasma generation used to generate plasma, and a method for setting plasma generation parameters. Background technique [0002] For example, in the manufacturing process of semiconductor devices such as IC and LSI, after the etching process, in order to decompose and remove the resist composed of unnecessary organic substances, a plasma ashing device (ashing device) is used. Oxygen plasma generated by discharging in an atmosphere containing oxygen. In such a plasma ashing apparatus, for example, oxygen gas is introduced into a reaction tube containing a substrate, a current is supplied from a high-frequency power supply t...
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IPC IPC(8): H05H1/46H01L21/3065H03F1/56
CPCH05H1/46H01J37/32155H01J37/32174H05H2242/26H01L21/3065
Inventor 藤本直也押田善之加藤规一
Owner KOKUSA ELECTRIC CO LTD