Method and system for managing memory

Abstract

The invention relates to a method and system for managing a memory. The method for managing the memory comprises the following steps that the temperature value of the environment where the memory is located is monitored; whether the temperature value is smaller than a preset lowest work temperature or larger than a preset highest work temperature or not is judged, and if yes, the refreshing frequency of the memory is adjusted to refreshing frequency corresponding to the temperature value. According to the method and system for managing the memory, when the monitored temperature value is smaller than the lowest work temperature, the refreshing frequency of the memory is adjusted to the refreshing frequency corresponding to the temperature value, the data of the memory can be read before the data in the memory decrease below a threshold voltage, reading errors are avoided, and when the environment temperature is lower than the lowest work temperature or higher than the highest work temperature, an additional heating circuit does not need to be designed to heat the memory at low temperature, or the memory does not need to be cooled at high temperature, an expensive memory does not need to be selected to adapt to the low temperature environment and the high temperature environment, cost is lowered, and the work temperature range of the memory is widened.

Description

technical field [0001] The invention relates to computer technology, in particular to a memory management method and system. Background technique [0002] Memory is an important part of the computer system architecture. It realizes the data storage function: storing original data, intermediate data and calculation results, etc., and is also a buffer unit for high-speed execution units and external low-speed storage devices. [0003] According to the reading method, the memory is divided into read-only memory (Read Only Memory, referred to as ROM) and random access memory (Random Access Memory, referred to as RAM). Memory is generally implemented with RAM, which relies on the principle of capacitor charging and discharging to store data, and realizes data reading through an n-channel MOS transistor (nMOS) that controls the switching of the capacitor. However, as the temperature decreases, the MOS leakage current increases. Larger, so that the electric capacity on the capacit...

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Problems solved by technology

[0003] According to the reading method, the memory is divided into read-only memory (Read Only Memory, referred to as ROM) and random access memory (Random Access Memory, referred to as RAM). Memory is generally implemented with RAM, which relies on the principle of capacitor charging and discharging to store data, and realizes data reading through an n-channel MOS transistor (nMOS) that controls the switching of the capacitor. However, as the temperature decreases, the MOS leakage current increases. Larger, so that the electric capacity on the capacitor is discharged faster, so that when the data needs to be read, the electric capacity on the capacitor is lower than the effective voltage, which makes the data reading error

[0004] At present, in order to use memory in a low-temperature environment, there are mainly two methods. The first is to use memory chips suitable for a wide temperature range. There are few product models, the working frequency is lower than the usual frequency, and the price is expensive; the second method uses an external auxiliary heating device to heat the memory. When the environmental file is monitored to rise to the allowable working temperature, the power is turned on again. This method is additionally cumbersome The peripheral control circuit, and in order to effectively transfer the temperature to the memory, it is often necessary to change the structure of the memory, which increases the cost

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