Band-shaped beam klystron outer tuning apparatus

A technology of external tuning and strip injection, which is applied in the direction of discharge tubes, time-of-flight electron tubes, circuit components of time-of-flight electron tubes, etc., can solve the problems of difficult spring development and expensive development of small-sized bellows, and achieve The result of light weight, low mass and reliable performance

Inactive Publication Date: 2014-03-26
INST OF ELECTRONICS CHINESE ACAD OF SCI
View PDF4 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] With the development of microwave vacuum electronic devices towards high frequency and miniaturization, the size of bellows is required to be smaller and smaller. However, the development of small-sized bellows is expensive and difficult, and it is difficult to develop springs that meet the requirements.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Band-shaped beam klystron outer tuning apparatus
  • Band-shaped beam klystron outer tuning apparatus
  • Band-shaped beam klystron outer tuning apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings. It should be noted that, in the drawings or descriptions of the specification, similar or identical parts all use the same figure numbers. Implementations not shown or described in the accompanying drawings are forms known to those of ordinary skill in the art. Additionally, while illustrations of parameters including particular values ​​may be provided herein, it should be understood that the parameters need not be exactly equal to the corresponding values, but rather may approximate the corresponding values ​​within acceptable error margins or design constraints. The directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only referring to the directions of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a band-shaped beam klystron outer tuning apparatus. The apparatus comprises an accommodation cavity, a tuning assembly, a trapezoid lever bracket and a control assembly. An inductance tuning mode is adopted, and a tuning piston is inserted into a band-shaped beam klystron tube body to form a cavity wall of a resonant cavity; and the motion of the tuning piston is controlled through a lever principle so as to change the size and distribution inductance of the resonant cavity and further change the resonant frequency of the resonant cavity. According to the invention, a flexible seal membrane sheet rather than a corrugated pipe is adopted for realizing tuning of the resonant cavity so that the cost is reduced, and the structure is simplified.

Description

technical field [0001] The invention relates to the technical field of microwave vacuum electronic devices, in particular to an external tuning device for a strip-shaped injection klystron. Background technique [0002] In the klystron, the structure and size of the resonant cavity determine its resonant frequency and quality factor, which in turn determines the working characteristics of the klystron. During the tube-making process of the klystron, the size of the resonant cavity deviates from the design value, which leads to the change of the frequency characteristics of the resonant cavity. The klystron resonant cavity tuning technology makes up for the dimensional error caused by the tube making process to a certain extent. [0003] The tuning technology of the resonant cavity is divided into three types: capacitance tuning, inductance tuning and compound tuning. Inductance tuning is to change the volume of the resonant cavity and the distributed inductance of the reso...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01J23/20H01J23/207
Inventor 杨修东王树忠阮存军赵鼎张长青
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap