Epitaxial temperature test monitoring structure and forming method

Abstract

The epitaxial temperature test monitoring structure and forming method provided by the present invention, the method includes: growing a dielectric layer on a substrate; forming a monitoring structure window including first openings with equal sizes and constant first intervals in the dielectric layer; consuming exposed After removing the part of the substrate, an oxide layer is grown, and the dielectric layer and the oxide layer are removed to form a monitoring window with equal size and a step difference between the second intervals; the test structure is formed on the monitoring window by using the epitaxial process, and the test structure along the test structure is obtained. The third opening and the third distance between the third openings and the graphic data of the epitaxial distortion direction; only change the temperature of the epitaxial process, repeat the above steps, and process the graphic data obtained each time to correspond to the changed epitaxial process. The temperature relationship diagram is made to form a monitoring method, which makes the monitoring of the epitaxial temperature simple, efficient, and highly operable. It can quickly and effectively monitor the epitaxial temperature to reduce product risks caused by temperature deviation.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing technology, and in particular relates to an epitaxial temperature testing and monitoring structure and a forming method. Background technique [0002] In the integrated circuit manufacturing process, the epitaxial process (Epitaxy) refers to the growth of conductive type, The process of a new single crystal layer whose resistivity, thickness, lattice structure, integrity and other parameters meet the product structure requirements, this layer of single crystal layer is called an epitaxial layer. [0003] According to the planar anisotropy of crystallographic plane growth, the newly grown single crystal layers must be sequentially grown strictly along the original crystal axis direction of the substrate. In the front process of epitaxial layer formation, the surface discontinuity caused by oxidation during the annealing process of the buried layer (NBL or BL) will also propagat...

AI Technical Summary

Problems solved by technology

Due to the loss of the working end of the thermocouple, the insensitivity of the thermomagnetic effect, and the error of the compensation wire correction, the temperature of the epitaxial process will fluctuate, and it may be high or low for a long time, or the function of the thermocouple may be affected. Sustained attenuation occurs, which poses a risk to product quality if temperature changes are not detected during the thermocouple detection cycle

The epitaxial thickness and resistivity usually monitored in the epitaxial process cannot be alarmed when the temperature deviation is small. If the product parameters cannot be adjusted in time, it will cause abnormal quality of large-scale products.

In order to avoid the problem that the thermocouple cannot monitor the epitaxial temperature change in time during the thermocouple detection period, generally only by increasing the frequency of thermocouple calibration and replacing the thermocouple to reduce the risk of temperature deviation, but due to the high cost of frequent thermocouple replacement, thermoelectric The couple calibration process is complicated, so it has a great impact on cost and production capacity

Images