Method of making a thin film transistor device

Abstract

The method of making a thin film transistor device includes: forming first pattern layers in different thickness formed by light resistance on a substrate having semiconductor materials, dielectric materials, and conductor materials formed thereon via a first gray-scale mask, gradually removing the first pattern layers, exposing the surfaces of layers from the thinnest part, etching the layers and doping carriers to the semiconductor materials to form a first doping area, and removing the other first pattern layers to obtain a conductive layer, a dielectric layer, and a semiconductor layer corresponding to a first center part and a transistor of the first doping area. The basic frame of a transistor can be made out by means of a gray-scale mask, and compared with a method using multiple masks, the method provided saves more material costs and making time.

Description

technical field [0001] The invention relates to a method for manufacturing a transistor, in particular to a method for manufacturing a thin film transistor. Background technique [0002] In liquid crystal displays, transistors are mainly used in n-type thin film transistors for controlling pixel electrodes, and various n-type thin film transistors, p-type thin film transistors, and complementary transistors in driving circuits for controlling pixel electrodes. In recent years, polysilicon transistors have gradually become one of the mainstream transistors used in displays. [0003] refer to figure 1 , taking the n-type thin film transistor that controls the pixel electrode (not shown) to be electrically connected to it as an example, it mainly includes a substrate 11, an n-type semiconductor layer 12 formed on the substrate 11, and a layer formed on the n-type semiconductor layer. Dielectric layer 13 on the semiconductor layer 12 of type, one layer is arranged on the condu...

AI Technical Summary

Problems solved by technology

Moreover, the screen size of the existing liquid crystal display or organic light-emitting display (OLED) is getting larger and larger. If there are more photomask processes, the relative steps of coating photoresist, exposure, development, and photoresist removal are repeated. The required process cost will increase a lot, and the process time will be relatively longer

Furthermore, the yellow light process between each mask needs to go through a precise alignment process, and the more masks also increase the probability of yellow light misalignment, which leads to the problem of poor yield of the transistors produced

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