III-V group compound devices with improved efficiency and droop rate
A III-V, compound layer technology, applied to semiconductor devices of light-emitting elements, semiconductor devices, laser components, etc., can solve problems such as efficiency reduction, poor electron-hole recombination, and output power reduction of LED and LD devices
Active Publication Date: 2014-03-26
EPISTAR CORP
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Problems solved by technology
However, the quantum wells of conventional LED and LD devices have poor electron-hole recombination, resulting in reduced output power and large efficiency drop of LED and LD devices
[0003] Therefore, while existing LED and LD devices are adequate for their intended purposes, they are not fully satisfactory in every respect
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[0031] It is to be understood that the following summary provides various different embodiments or examples for implementing different features of various embodiments. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include other components formed on the first component and the second component. An embodiment in which the parts are such that the first part and the second part are not in direct contact. Also, the terms "top", "bottom", "below", "above", etc. are used for convenience and are not intended to limit the scope of the embodiments to any particular orientation . Various features may be arbitrarily drawn in differ...
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The present disclosure involves an illumination apparatus. The illumination apparatus includes an n-doped semiconductor compound layer, a p-doped semiconductor compound layer spaced apart from the n-doped semiconductor compound layer, and a multiple-quantum-well (MQW) disposed between the first semiconductor compound layer and the second semiconductor compound layer. The MQW includes a plurality of alternating first and second layers. The first layers of the MQW have substantially uniform thicknesses. The second layers have graded thicknesses with respect to distances from the p-doped semiconductor compound layer. A subset of the second layers located most adjacent to the p-doped semiconductor compound layer is doped with a p-type dopant. The doped second layers have graded doping concentration levels that vary with respect to distances from the p-doped semiconductor layer. The invention also provides an III-V group compound device with the improved efficiency and droop rate.
Description
technical field [0001] The present invention relates generally to III-V compound devices and, more particularly, to improving the efficiency and drop rate of III-V compound devices, such as gallium nitride (GaN) devices. Background technique [0002] In recent years, the semiconductor industry has experienced rapid growth. Technological advances in semiconductor materials and design have produced many types of devices for different purposes. Fabrication of some of these types of devices requires the formation of one or more III-V compound layers on a substrate, for example, a gallium nitride layer on a substrate. Devices using III-V compounds may include light emitting diode (LED) devices, laser diode (LD) devices, radio frequency (RF) devices, high electron mobility transistor (HEMT) devices, and / or high power semiconductor devices. Some of these devices, such as LED devices and LD devices, involve forming quantum wells with multiple pairs of active and barrier layers. W...
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Login to View More IPC IPC(8): H01L33/06H01S5/343
CPCH01S5/3407F21K9/00F21V3/049F21Y2101/025F21V7/22H01L21/02458F21V29/2206F21S6/00H01L33/06H01S5/0014H01S5/34333H01L21/02507H01L33/32F21Y2101/02F21Y2101/00F21Y2115/30B82Y20/00F21V7/24F21V29/74F21Y2115/10H01L33/0025H01L33/12H01L33/145
Inventor 李镇宇林弘伟林忠宝夏兴国郭浩中
Owner EPISTAR CORP