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Mask plate and through hole forming method

A mask and via technology, used in the display field, can solve the problems of limited size, difficult to break through the exposure size, and restrict the application of resin vias, and achieve the effects of minimized vias, clear graphic edges, and good uniformity.

Inactive Publication Date: 2014-04-30
BEIJING BOE OPTOELECTRONCIS TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The size of via holes in conventional positive photosensitive resins is limited by the resolution of current exposure equipment. In the TFT-LCD manufacturing process, it is difficult for the exposure size of via holes to break through the limitation of the resolution of the exposure machine (that is, the resolution capability, which is generally 4 μm above), such as figure 1 As shown, the light-transmitting area 2 of the existing mask 1 is generally a square hole, and the size can only be designed to be above the resolution of the exposure equipment (greater than 4 μm). Therefore, after exposure, the size after development (abbreviated as DICD) is often 4 μm above; thus limiting the application of resin vias in high-resolution panels

Method used

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  • Mask plate and through hole forming method

Examples

Experimental program
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Embodiment 1

[0033] Such as figure 2 As shown, a mask plate according to an embodiment of the present invention has a light-transmitting pattern 20a on the mask plate 10a. In the light-transmitting pattern 20a, only one set of opposite sides is serrated, and the entire serrated side 20a- 1's sawtooth height h is equal.

[0034] In this embodiment, the angle θ of the tooth tip angle of the sawtooth on the side of the light-transmitting pattern can be 30-45°, preferably 45°; the light-transmitting pattern 20a is a square hole, and the size of the square hole is length a×width b 3 μm×3 μm; the sawtooth height h of the entire sawtooth-shaped side 20 a - 1 is 0.5 μm.

[0035] In this embodiment, the opposite sides of the light-transmitting pattern are set as zigzag, which can increase the exposure of the overall pattern. Since the size of the zigzag side is much smaller than the resolution of the exposure machine, the positive light of the zigzag part The resist or positive photosensitive re...

Embodiment 2

[0037] Such as image 3 As shown, in a mask plate of this embodiment, the mask plate 10b has a light-transmitting pattern 20b, and in the light-transmitting pattern 20b, only one set of opposite sides is saw-toothed, and the entire saw-toothed side 20b-1 is saw-toothed The heights h are equal, and the transparent pattern 20b in this embodiment is a square hole. The transparent pattern 20b has a sawtooth-shaped side 20b-1.

[0038] The angle θ of the sawtooth tooth tip angle of the sawtooth edge in this embodiment can be 30-45°, preferably 45°; the length a×width b of the light-transmitting pattern 20b is 3 μm×3 μm; the entire zigzag side The sawtooth height h of 20b-1 was 0.75 μm.

[0039] In this embodiment, the opposite sides of the light-transmitting pattern are set as zigzag, which can increase the exposure of the overall pattern. Since the size of the zigzag side is much smaller than the resolution of the exposure machine, the positive photolithography of the zigzag part...

Embodiment 3

[0041] Such as Figure 4 with Figure 5 As shown, in the mask provided by this embodiment, the mask 10c has a light-transmitting pattern 20c, and the edges of the light-transmitting pattern 20c are all jagged.

[0042] in, Figure 4 The light-transmitting pattern in is circular hole-shaped, while Figure 5 The light-transmitting pattern in is a square hole shape, Figure 5 The middle serrated side 20c-1 has four. The angle θ of the addendum angle of the sawtooth on the edge of the light-transmitting pattern can be 30-45°, preferably 40°; the diameter d of the circular-hole-shaped light-transmitting pattern is 3 μm; the size (length) of the square-hole-shaped light-transmitting pattern a×width b) is 3 μm×3 μm; the sawtooth height h of the entire sawtooth-shaped edge is 0.5 μm.

[0043] The edges of the light-transmitting pattern in this embodiment are all jagged mask plates, which can also increase the exposure of the overall pattern. Since the size of the jagged edges is ...

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Abstract

The invention relates to the technical field of display, and discloses a mask plate and a through hole forming method. A light-transmitting pattern is formed on the mask plate, and the edge of the light-transmitting pattern is curved. The mask plate is applicable to all positive photoresist materials and positive photosensitive resin materials which are required to be exposed and developed; the edge of the light-transmitting pattern of the mask plate is curved, so that the exposure amount of the overall pattern can be increased; the size of the curved edge is far less than the resolution of an exposure machine, so that only a small amount of photoresist or positive photosensitive resin on the curved edge is exposed, and most part of the photoresist or the positive photosensitive resin are remained; therefore, the overall size of a through hole is small and does not exceed 4 mu m, and the requirement for fine cabling under a high resolution is met.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a mask plate and a via hole forming method. Background technique [0002] In order to realize the high resolution of the thin film transistor active matrix liquid crystal display (TFT-LCD), fine wiring is required to reduce the size of the via hole; and in order to reduce the power consumption of the device, an organic resin layer is often added on the TFT array substrate and require photolithography. [0003] The size of via holes in conventional positive photosensitive resins is limited by the resolution of current exposure equipment. In the TFT-LCD manufacturing process, it is difficult for the exposure size of via holes to break through the limitation of the resolution of the exposure machine (that is, the resolution capability, which is generally 4 μm above), such as figure 1 As shown, the light-transmitting area 2 of the existing mask 1 is generally a square hole, and th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/68G03F7/20
Inventor 卢凯史大为郭建
Owner BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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