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MIM capacitor and manufacturing method thereof

A manufacturing method and capacitor technology, applied in the direction of capacitors, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problem that the lower plate metal is easy to be etched, so as to avoid improper etching, improve yield rate, and improve yield rate effect

Inactive Publication Date: 2014-05-07
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the deficiencies of the prior art, the present invention provides a MIM capacitor and its manufacturing method, which solves the problem that the lower plate metal is easily etched in the prior art

Method used

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  • MIM capacitor and manufacturing method thereof
  • MIM capacitor and manufacturing method thereof
  • MIM capacitor and manufacturing method thereof

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Embodiment 1

[0055] Below, refer to Figure 2A-2E with image 3 The detailed steps of an exemplary method of the manufacturing method of the MIM capacitor proposed by the present invention will be described. in, Figure 2A-Figure 2E It is a cross-sectional view of a structure formed after each step of a manufacturing method of a MIM capacitor according to an embodiment of the present invention is completed; wherein, Figure 2D It is a cross-sectional view of a typical structure of a MIM capacitor according to an embodiment of the present invention; image 3 It is a flowchart of a manufacturing method of a MIM capacitor proposed by an embodiment of the present invention.

[0056] The manufacturing method of the MIM capacitor provided by the embodiment of the present invention specifically includes the following steps:

[0057] Step 1, providing a substrate 100, such as Figure 2A shown.

[0058] Wherein, the MIM capacitor in the embodiment of the present invention may be formed on a s...

Embodiment 2

[0092] An embodiment of the present invention provides a MIM capacitor, which can be manufactured by the manufacturing method described in Embodiment 1. Its structure is as follows:

[0093] An embodiment of the present invention provides a MIM capacitor, such as Figure 2D shown, the MIM capacitor consists of:

[0094] A base 200, a lower plate metal 201 formed on the base 200;

[0095] a dielectric layer 202 formed on the substrate 200 and the lower plate metal 201;

[0096] An upper plate metal 203 formed above the dielectric layer 202;

[0097] Wherein, the upper plate metal 203 extends to the outside of the edge of the lower plate metal 201 in all directions parallel to the lower plate metal 201 .

[0098] Wherein, the material of the dielectric layer 202 is preferably silicon nitride.

[0099] Wherein, the material of the lower plate metal 201 is copper, and / or, the material of the upper plate metal 203 is copper.

[0100] Preferably, the shape of the lower plate m...

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Abstract

The invention provides a MIM capacitor and a manufacturing method thereof, and relates to the technical field of a semiconductor. The manufacturing method of the MIM capacitor comprises the following steps: S101, providing a substrate; Step102, forming a lower pole plate metal on the substrate; S103, forming a dielectric layer on the substrate; S104, forming a metal layer on the dielectric layer; and S105, etching the metal layer to form an upper pole plate metal, the upper pole plate metal extending to the outer side of the edge of the lower pole plate metal along each direction parallel to the lower pole plate metal. According to the manufacturing method of the capacitor, since the formed upper pole plate metal extends to the outer side of the edge of the lower pole plate metal along each direction parallel to the lower pole plate metal, the lower pole plate metal is prevented from being improperly etched during a process of etching to form the upper pole plate metal, and the yield rate of a manufactured capacitor is improved. The MIM capacitor provided by the invention is provided with the same structure as the capacitor manufactured by use of the method and thus correspondingly has a higher yield rate.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a metal-insulator-metal (metal-insulator-metal, hereinafter referred to as MIM) capacitor and a manufacturing method thereof. Background technique [0002] Capacitive components are often used as electronic passive devices in integrated circuits such as radio frequency ICs and monolithic microwave ICs. Common capacitor structures include metal oxide semiconductor (MOS) capacitors, PN junction capacitors, and MIM capacitors. Among them, MIM capacitors provide better electrical characteristics than MOS capacitors and PN junction capacitors in some special applications. This is because MOS capacitors and PN junction capacitors are limited by their own structures, and the electrodes are prone to generate hole layers during operation. , causing its frequency characteristics to degrade. The MIM capacitor can provide better frequency and temperature-related characterist...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L23/522
CPCH01L23/5223H01L28/86H01L28/88
Inventor 余达强林爱梅李由
Owner SEMICON MFG INT (SHANGHAI) CORP