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A cleaning method for a silicon-based substrate diffuser

A diffusion sheet and substrate technology, applied in the direction of liquid cleaning methods, cleaning methods and utensils, chemical instruments and methods, etc., can solve the problem that the bonding surface is not easy to clean, so as to save cleaning costs and reduce labor intensity Effect

Active Publication Date: 2016-08-17
YINGLI ENERGY CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] The invention provides a method for cleaning a silicon-based substrate diffusion sheet, which can not only clean and smooth the surface of the diffusion sheet, solve the problem that the bonding surface is not easy to clean, improve the cleaning pass rate of the diffusion sheet, and also It can solve the problem of the diffusion sheet being oxidized, thereby saving costs and reducing the labor intensity of workers

Method used

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  • A cleaning method for a silicon-based substrate diffuser

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Effect test

Embodiment 1

[0034] A method for cleaning a silicon-based substrate diffuser, comprising the steps of:

[0035] The first step is to soak the silicon-based substrate diffusion sheet to be cleaned in HF and HNO 3 In the mixed first mixed solution, the duration is about 30 minutes, and the volume mixing ratio of the two acids in the first mixed solution is HF:HNO 3 =20:1; The purpose of this step is to subject the diffusion sheet to strong corrosion, remove the blue film and diffusion layer on the surface of the diffusion sheet to the greatest extent, and prolong the reaction time to make the reaction more complete.

[0036] The second step is to take out the soaked diffuser and then soak it in HF+HNO 3 In the mixed second mixed solution, the duration is 5 minutes, and the volume mixing ratio of the two acids in the second mixed solution is 1:20; the purpose of this step is to remove the oxidation caused by the soaking of the first mixed acid on the surface of the diffusion sheet, At the s...

Embodiment 2

[0044] A method for cleaning a silicon-based substrate diffuser, comprising the steps of:

[0045] The first step is to soak the silicon-based substrate diffusion sheet to be cleaned in HF+HNO 3 In the mixed first mixed solution, the duration is about 35 minutes, and the volume mixing ratio of the two acids in the first mixed solution is HF:HNO 3 =23:1; the acid concentration of HF is 41%, HNO 3 The acid concentration is 65%.

[0046] The second step is to take out the soaked diffuser and then soak it in the second mixture of HF+HNO3 for 8 minutes. The volume mixing ratio of the two acids in the second mixture is HF:HNO 3 =1:30; the acid concentration of HF is 40%, HNO 3 The acid concentration is 64%.

[0047] The third step is to put the diffusion sheet reacted from the second step into pure water with a conductivity of 15 trillion for overflow rinsing, and add compressed air for bubbling to facilitate the rinsing of the acid solution remaining in the sheet. The pH of pu...

Embodiment 3

[0050] A method for cleaning a silicon-based substrate diffuser, comprising the steps of:

[0051] The first step is to soak the silicon-based substrate diffusion sheet to be cleaned in HF+HNO 3 In the mixed first mixed solution, the duration is about 45 minutes, and the volume mixing ratio of the two acids in the first mixed solution is HF:HNO 3 =20:1; the acid concentration of HF is 39%, HNO 3 The acid concentration is 69%.

[0052] The second step is to take out the soaked diffuser and then soak it in the second mixture of HF+HNO3 for 10 minutes. The volume mixing ratio of the two acids in the second mixture is HF:HNO 3=1:30; the acid concentration of HF is 42%, HNO 3 The acid concentration is 62%.

[0053] The third step is to put the diffusion sheet reacted from the second step into pure water with a conductivity of 16 trillion for overflow rinsing, and add compressed air for bubbling to facilitate the rinsing of the acid solution remaining in the sheet. The pH of pu...

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Abstract

The invention discloses a cleaning method for a silica-based substrate diffusion sheet, and belongs to processing methods of semiconductor devices. According to the method, the silica-based substrate diffusion sheet is cleaned firstly through first mixed acid and second mixed acid, and then is washed through clear water until a PH value equals to seven, and finally the silica-based substrate diffusion sheet is dried. According to the cleaning method for the silica-based substrate diffusion sheet, the surface of the silica-based substrate diffusion sheet can be washed cleanly and smoothly, the problem that a bonding surface is not prone to being cleaned is solved, the problem that the silica-based substrate diffusion sheet is oxidized is also solved, cost can be saved, and labor intensity is lowered. The silica-based substrate diffusion sheet cleaned through the method can overcome the two defects that the bonding surface cannot be cleaned easily and the surface is oxidized completely, and an existing cleaning qualified rate is improved to be more than 95% even up to more than 98% from 80%.

Description

technical field [0001] The present invention belongs to a processing method of a semiconductor device. Background technique [0002] With the rapid development of solar photovoltaic technology, the cell production technology used to manufacture components is also constantly updated. In the process of cell production, it is necessary to diffuse boron or phosphorus to the surface of the silicon-based bare chip through a certain process. The amount of phosphorus or boron on the surface of this silicon chip is very high, and the unqualified products produced in this process Called scrap diffusers. [0003] For a long time, there has not been an optimal process to recycle this diffuser, which has caused a large amount of waste to accumulate in warehouses and cannot be used. The cost of silicon material is one of the high costs of solar cells. In order to save costs, these silicon-based substrate diffusion sheets must be recycled and reused, and these diffusion sheets should be ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67B08B3/10
CPCH01L21/02052
Inventor 田迎新郑伟刘俊飞段学颖
Owner YINGLI ENERGY CHINA
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