A method of electroplating copper

Abstract

The invention provides a method for performing copper electroplating. A substrate in need of manufacturing wiring for copper electroplating is provided firstly, and a seed layer used for copper electroplating is formed on the surface of the substrate by adopting a sputtering mode; then a pattern mask film is manufactured on the surface of the seed layer according to the wiring for the copper electroplating and the seed layer is etched; then an electroplated copper layer is manufactured on the surface, which is not covered by the pattern mask film, of the seed layer by adopting an electroplating mode; and finally the pattern mask film and the seed layer covered by the pattern mask film are removed so that manufacturing is completed. The method has the following beneficial effects: holes on interfaces of the electroplated copper and the sputtered copper can be eliminated firstly, and then the holes formed in high-temperature annealing can be eliminated. Therefore, the electroplated copper acquired by the method for performing copper electroplating has characteristics of being low in resistance without holes, etc. Improvement of the technology is suitable for the fields of semiconductors, integrated circuits and the like that the method for performing copper electroplating is applied to manufacture copper lead wires.

Description

Technical field [0001] The invention belongs to the field of semiconductor integrated circuit manufacturing, and particularly relates to a method for electroplating copper. Background technique [0002] In the field of semiconductor integrated circuit manufacturing, electroplated copper wiring is used to reduce signal delay in interconnections. The biggest advantage of using copper as an interconnect material is that the resistance of copper is lower than aluminum, which is most commonly used as an interconnect material in history. Using copper as an interconnect material with low resistance can reduce the signal delay in the interconnection, thereby increasing the speed of the integrated circuit. The speed limit of an integrated circuit refers to the frequency at which its transistors switch. [0003] Since the smaller the transistor size in the integrated circuit, the higher the clock frequency, the integrated circuit usually increases the speed of the integrated circuit by red...

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Problems solved by technology

[0011] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for electroplating copper, which is used to solve the problem of increased resistance caused by a large number of holes generated in the electroplating copper process or in the annealing process in the prior art, which affects the grain growth. big problem

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