The Method of Defining Connection Hole Using Electron Beam Technology

Abstract

The invention discloses a method for defining contacts of a semiconductor device through adoption of an e-beam process. The method includes: a basic structure of the device is formed on a substrate and the basic structure includes a lower-layer structure which needs to be electrically connected with the contacts; a first hard mask layer is formed on the basic structure; an e-beam lithography process is adopted to form photoetching glue patterns of a negative glue on the first hard mask layer and define connection areas; the photoetching glue patterns are used as intermediate photomasks to etch the first hard mask layer so as to form first hard mask patterns; a second hard mask layer is formed on the first hard mask patterns; the first hard mask patterns are removed and the remaining hard mask layers form second hard mask patterns and the connection areas are exposed; and the second hard mask patterns are used as intermediate photomasks to etch the contacts which contact the lower-layer structure. According to the method, through patterning of the hard intermediate photomasks twice successively, the e-beam process of the negative glue is adopted to successfully define contact patterns of a micro-nano level so that efficiency and security are improved.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor device, in particular to a method for defining a connection hole of a semiconductor device by using an electron beam process. Background technique [0002] The continuous shrinking of the critical dimension (CD) is the development trend of the very large scale integration (VLSI) industry. In the CD shrinking process, the photolithography process (Litho) is increasingly challenged. Electron beam (eBeam), as a nanoscale lithography process, has become one of the research hotspots in the international semiconductor field in recent years. [0003] For the eBeam process, one of the main problems is that the process time is too slow because it needs to scan the e-beam photoresist to be patterned line by line. Therefore, during the process, the fewer areas that need to be written by the electron beam, the better. On the other hand, in the VLSI manufacturing process, the area of ​​the contac...

AI Technical Summary

Problems solved by technology

Because eBeam’s positive resist developer is usually a mixed liquid of methyl isobutyl ketone (MIBK) + isopropanol (IPA), and MIBK is a toxic substance, which will be dangerous if inhaled, which is not conducive to process safety

[0005] Therefore, eBeam encountered inevitable contradictions when defining Contact graphics: using negative glue, the area that needs to be written by eBeam is greatly increased; using positive glue, there are safety problems

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