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Preparation method of metal thin film/zinc oxide nanorod array fluorescence enhancement material

A technology of zinc oxide nanorods and nanorod arrays, applied in metal material coating process, nano-optics, nanotechnology and other directions, can solve problems such as poor fluorescence enhancement effect

Active Publication Date: 2016-08-03
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the technical problem that the fluorescence enhancement effect of the existing ZnO nanorod array fluorescence enhancement substrate is poor, and to provide a method for preparing a metal film / zinc oxide nanorod array fluorescence enhancement material

Method used

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  • Preparation method of metal thin film/zinc oxide nanorod array fluorescence enhancement material
  • Preparation method of metal thin film/zinc oxide nanorod array fluorescence enhancement material
  • Preparation method of metal thin film/zinc oxide nanorod array fluorescence enhancement material

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specific Embodiment approach 1

[0022] Specific implementation mode 1: The preparation method of metal thin film / zinc oxide nanorod array fluorescence enhancement material in this implementation mode is carried out according to the following steps:

[0023] 1. Cleaning of the substrate: respectively use 99.5wt% acetone, 99.7wt% ethanol, deionized water with a conductivity of 18MΩ and 99.5wt% methanol to ultrasonically clean the flat substrate for 5-60 minutes;

[0024] 2. Preparation of metal thin film; use magnetron sputtering, and ion deposition, thermal evaporation, pulsed laser deposition, or electrochemical method to prepare a uniform metal thin film on the surface of a flat substrate;

[0025] 3. Preparation of ZnO nanorod arrays: use hydrothermal method, pulsed laser substrate method, chemical vapor deposition method or heat transfer method to obtain ZnO nanorod arrays on the planar substrate treated in step 2, that is, metal thin film / oxidized Zinc nanorod array fluorescence-enhancing materials.

[...

specific Embodiment approach 2

[0028] Embodiment 2: This embodiment differs from Embodiment 1 in that the planar substrate described in step 1 is a silicon wafer, quartz wafer, glass wafer, PMMA, PTFE, or sapphire wafer. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0029] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the metal thin film in step 2 is a silver thin film, a gold thin film, a platinum thin film, a palladium-gold thin film, an aluminum thin film or a copper thin film. Others are the same as those in the first or second embodiment.

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Abstract

The invention provides a preparation method of a metal film / zinc oxide (ZnO) nanorod array fluorescence enhancement material, and relates to a novel design scheme of a metal film / ZnO nanorod array substrate for high-performance fluorescence enhancement, and a preparation method of the metal film / ZnO nanorod array substrate. The invention aims at further improving the fluorescence enhancement effect of the existing ZnO nanorod array fluorescence enhancement substrate so as to meet the strong demand of industrialized application of the ZnO nanorod array fluorescence enhancement substrate in the field of biological sensing and detecting devices. The method comprises the steps of 1, cleaning the substrate; 2, preparing a metal film; 3, preparing a ZnO nanorod array; 4, detecting the metal film / ZnO nanorod array fluorescence enhancement. The preparation method of the metal film / ZnO nanorod array fluorescence enhancement material is applied to the fields such as a basic biological fluorescent sensing detector, a cell imaging device, an environment detector, a real-time medical monitoring device and a photosensitive detector.

Description

technical field [0001] The invention relates to a preparation method of a nanorod array fluorescence enhancing material. Background technique [0002] Zinc oxide (ZnO) is a direct bandgap wide-bandgap semiconductor material with a bandgap width of 3.37eV and a hexagonal wurtzite crystal structure, which has light emission, chemical sensing, photocatalysis, and biocompatibility And many other excellent performance. ZnO nanomaterials have been proved to have a very rich morphology and structure. Among them, ZnO nanorod arrays with c-axis preferred orientation perpendicular to the substrate surface can be prepared on a variety of substrate surfaces, and the single nanorods contained are in the shape of hexagonal prisms. The shape, its diameter and length can be adjusted by controlling the experimental parameters, which is very beneficial to the design, processing and performance optimization of micro-nano devices. So far, ZnO nanorod arrays have been used in light-emitting de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/64B81C1/00B82Y20/00
Inventor 孙晔尹永琦于淼刘潇杨彬曹文武
Owner HARBIN INST OF TECH
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