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Preparation method of metal film/zinc oxide (ZnO) nanorod array fluorescence enhancement material

A technology of zinc oxide nanorods and nanorod arrays, which is applied in metal material coating technology, nano optics, nanotechnology, etc., and can solve problems such as poor fluorescence enhancement effects

Active Publication Date: 2014-06-04
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the technical problem that the fluorescence enhancement effect of the existing ZnO nanorod array fluorescence enhancement substrate is poor, and to provide a method for preparing a metal film / zinc oxide nanorod array fluorescence enhancement material

Method used

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  • Preparation method of metal film/zinc oxide (ZnO) nanorod array fluorescence enhancement material
  • Preparation method of metal film/zinc oxide (ZnO) nanorod array fluorescence enhancement material
  • Preparation method of metal film/zinc oxide (ZnO) nanorod array fluorescence enhancement material

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specific Embodiment approach 1

[0022] Specific implementation manner 1: The preparation method of the metal thin film / zinc oxide nanorod array fluorescence enhancement material of this embodiment is carried out according to the following steps:

[0023] 1. Substrate cleaning: use 99.5wt% acetone, 99.7wt% ethanol, deionized water with a conductivity of 18MΩ and 99.5wt% methanol to ultrasonically clean the planar substrate for 5-60 minutes;

[0024] 2. Preparation of metal thin films; using magnetron sputtering, ion deposition, thermal evaporation, pulsed laser deposition, or electrochemical methods to prepare uniform metal thin films on the surface of a flat substrate;

[0025] 3. Preparation of ZnO nanorod array: use hydrothermal method, pulsed laser substrate method, chemical vapor deposition method or heat transfer method to obtain ZnO nanorod array on the plane substrate processed in step 2, namely, metal film / oxidation Zinc nanorod array fluorescence enhancement material.

[0026] The detection method of the me...

specific Embodiment approach 2

[0028] Embodiment 2: The difference between this embodiment and the first embodiment is that the planar substrate in step 1 is a silicon wafer, a quartz wafer, a glass wafer, PMMA, PTFE, or a sapphire wafer. Others are the same as the first embodiment.

specific Embodiment approach 3

[0029] Specific embodiment three: This embodiment is different from one of specific embodiments one or two in that the metal film in step two is a silver film, a gold film, a platinum film, a palladium gold film, an aluminum film or a copper film. Others are the same as the first or second embodiment.

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Abstract

The invention provides a preparation method of a metal film / zinc oxide (ZnO) nanorod array fluorescence enhancement material, and relates to a novel design scheme of a metal film / ZnO nanorod array substrate for high-performance fluorescence enhancement, and a preparation method of the metal film / ZnO nanorod array substrate. The invention aims at further improving the fluorescence enhancement effect of the existing ZnO nanorod array fluorescence enhancement substrate so as to meet the strong demand of industrialized application of the ZnO nanorod array fluorescence enhancement substrate in the field of biological sensing and detecting devices. The method comprises the steps of 1, cleaning the substrate; 2, preparing a metal film; 3, preparing a ZnO nanorod array; 4, detecting the metal film / ZnO nanorod array fluorescence enhancement. The preparation method of the metal film / ZnO nanorod array fluorescence enhancement material is applied to the fields such as a basic biological fluorescent sensing detector, a cell imaging device, an environment detector, a real-time medical monitoring device and a photosensitive detector.

Description

Technical field [0001] The invention relates to a preparation method of a nanorod array fluorescence enhancement material. Background technique [0002] Zinc oxide (ZnO) is a direct band gap wide bandgap semiconductor material with a band gap of 3.37 eV and a hexagonal wurtzite crystal structure with light emission, chemical sensing, photocatalysis, and biocompatibility And many other excellent properties. ZnO nanomaterials have been proved to have a very rich morphological structure. Among them, ZnO nanorod arrays with c-axis preferred orientation perpendicular to the substrate surface can be prepared on the surface of a variety of substrates, and the single nanorods contained are hexagonal prisms. The morphology, its diameter and length can be adjusted by controlling experimental parameters, which is very conducive to the design, processing and performance optimization of micro-nano devices. Up to now, ZnO nanorod arrays have been used in light emitting devices, photosensitiv...

Claims

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Application Information

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IPC IPC(8): G01N21/64B81C1/00B82Y20/00
Inventor 孙晔尹永琦于淼刘潇杨彬曹文武
Owner HARBIN INST OF TECH
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