Check patentability & draft patents in minutes with Patsnap Eureka AI!

Manufacturing method of floating gate and manufacturing method of floating gate transistor

A manufacturing method and floating gate technology, which are applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as affecting the performance of floating gate transistors, difficult to form floating gate arcs, etc., achieving low cost and convenient operation. , the effect of improving performance

Active Publication Date: 2016-08-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] However, after testing, it is found that the above method is difficult to form the arc shape of the floating gate, which affects the performance of the floating gate transistor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of floating gate and manufacturing method of floating gate transistor
  • Manufacturing method of floating gate and manufacturing method of floating gate transistor
  • Manufacturing method of floating gate and manufacturing method of floating gate transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] As mentioned in the background, in the prior art, in the process of forming the floating gate, it is difficult to form a good arc-shaped structure whose upper end protrudes upwards from both ends.

[0041] The above-mentioned technical problems are caused by the fact that the etching gas (such as: CF 4 ) is easy to react with photoresist materials, etc. to produce a large amount of polymer in the through hole in the silicon nitride layer, especially a polymer layer will be formed on the inner wall of the through hole. Even though a small portion of the polymer may be removed when the ashing process is used to remove the photoresist layer on the silicon nitride layer, most of the polymer remains in the via hole. When performing gradient etching on the floating gate polysilicon layer along the through hole, since the gradient etching is isotropic etching, the polymer layer will seriously hinder the gradient etching, and finally the floating gate The arc structure cannot ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed are a method for manufacturing a floating gate and a method for manufacturing a floating gate transistor. The method for manufacturing the floating gate comprises the steps that a semiconductor substrate is provided; a floating gate layer and a mask layer are formed on the semiconductor substrate in sequence; a through hole is formed in the mask layer; polymer removal treatment is carried out on the through hole; gradient etching is carried out on the floating gate layer along the through hole. The method for manufacturing the floating gate transistor comprises the method for manufacturing the floating gate. The method for manufacturing the floating gate transistor and the method for manufacturing the floating gate can improve the structure of the floating gate and improve the performance of the floating gate transistor.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a floating gate and a method for manufacturing a floating gate transistor. Background technique [0002] It is widely used in EPROM (Erasable Programmable Read-Only Memory, Erasable Programmable Read-Only Memory), EEPROM (Electrically Erasable Programmable Read-Only Memory, Electrically Erasable Programmable Read-Only Memory), Flash (flash memory) memory, etc. The floating gate (floating gate) technology. [0003] figure 1 A schematic structural diagram of a floating gate transistor in the prior art is shown. The floating gate transistors may include: [0004] a semiconductor substrate 10; [0005] a source / drain region 20 located in the semiconductor substrate 10; [0006] a floating gate dielectric layer 30 located on the semiconductor substrate 10; [0007] The floating gate 40 located on the floating gate dielectric layer 3...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/283
CPCH01L29/40114H01L29/40117H01L29/66825
Inventor 邓咏桢
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com