Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device and manufacturing method of the same

A technology for semiconductors and devices, which is applied in the field of semiconductor devices with planarization films and its manufacturing, and can solve problems such as cracks in semiconductor chips

Active Publication Date: 2014-06-11
RENESAS ELECTRONICS CORP
View PDF8 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since cracks originating from the dicing area proceed to each diced semiconductor chip, the separated semiconductor chip has a problem with cracks

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and manufacturing method of the same
  • Semiconductor device and manufacturing method of the same
  • Semiconductor device and manufacturing method of the same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0056] now refer to figure 1 , a semiconductor device in a wafer state will be described as an example.

[0057] refer to figure 1 , the semiconductor wafer SW is composed of silicon single crystal, for example. A plurality of chip regions IMC for image sensors are arranged on the main surface of the semiconductor wafer SW. Each chip region IMC for an image sensor has a rectangular planar shape, and they are arranged in a matrix pattern. A region between a pair of adjacent chip regions IMC on the main surface of the semiconductor wafer SW is an edge region EGR (non-element region). The edge region EGR has a rectangular shape surrounding the periphery of the chip region IMC, and isolates each of the plurality of chip regions IMC on the main surface of the semiconductor wafer SW. Moreover, in figure 1 Near the periphery of the semiconductor wafer SW, in the area surrounded by the dotted line and the edge region EGR, a part of the rectangle which is the chip region is cut of...

no. 2 example

[0125] refer to Figure 9 , the configuration of each part of the semiconductor chip CHP of the present embodiment will be described.

[0126] refer to Figure 9 , the semiconductor chip CHP of this embodiment has the same characteristics as the semiconductor chip CHP of the first embodiment ( image 3 ) basically the same configuration. However, the semiconductor chip CHP of the present embodiment is different from the first embodiment in that the first slot SLT1 is formed in the edge region EGR.

[0127] The first slot SLT1 is formed in the level difference LVL which is a removed portion of the passivation film PAS. More specifically, the first slot SLT1 is formed in a part region of the upper surface of the planarizing film FF that is the bottom surface of the level difference LVL as a region (removed portion) in which the planarizing film FF is removed. The first slot SLT1 is formed right above the top-layer metal wiring TML of the guard ring GR. Also, the first slot ...

no. 3 example

[0141] First, refer to Figure 13 , the configuration of each part of the semiconductor chip CHP of the present embodiment will be described.

[0142] refer to Figure 13 , the semiconductor chip CHP of this embodiment has the same characteristics as the semiconductor chip CHP of the first and second embodiments ( image 3 and 9 ) basically the same configuration. However, in the case of the semiconductor chip CHP according to the present embodiment, in plan view, outside the top metal wiring TML of the guard ring GR (on the other side with respect to the top metal wiring TML of the photodiode region PDR: Figure 13 The right side in ) forms the first slot SLT1 in the level difference LVL of the edge region EGR. Specifically, the first slot SLT1 is formed, for example, in the scribe region DLR.

[0143] Figure 13 The first slot SLT1 in is formed in a part of the region of the upper surface of the planarizing film FF that is the bottom surface of the level difference LVL...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Film thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention relates to a semiconductor device and a manufacturing method of the same, and provides the highly reliable semiconductor device capable of suppressing occurrence of cracks as well as securing flatness and the manufacturing method therefor. The semiconductor device includes: a semiconductor substrate; an element region; and a non-element region. The non-element region includes: a top-layer metal wiring in a top layer of metal wirings formed in the non-element region; a flattening film covering an upper surface of the top-layer metal wiring; and a protecting film formed over the flattening film. A removed part where the protecting film is removed is formed in at least part of the non-element region.

Description

[0001] Cross References to Related Applications [0002] The disclosure of Japanese Patent Application No. 2012-262828 filed on Nov. 30, 2012 including specification, drawings and abstract is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to a semiconductor device and a manufacturing method of the semiconductor device, and in particular to a semiconductor device with a planarization film and a manufacturing method thereof. Background technique [0004] The semiconductor devices formed in the main surface of the semiconductor wafer in a matrix pattern are divided into respective semiconductor devices (semiconductor chips) by a so-called dicing process. If the region in which the semiconductor wafer is cut by dicing has a nitride film or the like as a passivation film, cracks and chipping may occur in the nitride film during dicing. Since cracks originating from the dicing region proceed to each of the diced semiconduc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/146H01L23/522H01L21/768
CPCH01L27/1462H01L27/14636H01L27/14621H01L27/14683H01L27/14685H01L27/146H01L27/14601H01L27/14603H01L27/14643H01L27/14687H01L23/564
Inventor 饭塚康治
Owner RENESAS ELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com