74results about How to "Inhibition appears" patented technology

An electronic imaging system for providing a viewable color image from an image data stream, including: a plurality of different colored laser light sources arranged in an at least one array with each such colored laser light source including a vertical cavity design; at least one area light valve for receiving the laser light and producing the viewable color image from the image data stream; and a projection lens for projecting the viewable color image onto a target plane.

In a threshold matrix generation part implemented by a computer, a tint image in a specified gray level is generated from temporary lighting order set in a matrix area, and a smoothing operation is performed on the tint image, to generate a grayscale evaluation image. The lighting order is modified by changing ordinal numbers in the lighting order of respective positions included in specified areas in the matrix area which correspond to areas around boundaries of halftone dot areas in the tint image on the basis of values of corresponding pixels in the evaluation image. With this operation, when the smoothing operation is performed on a tint image in the specified gray level generated in accordance with a modified lighting order, a variation among values of pixels included in the specified areas becomes smaller than a variation among values of pixels included in the specified areas in a case where the smoothing operation is performed on the tint image in the specified gray level generated in accordance with an unmodified lighting order. Then, threshold values are determined in the matrix area with reflecting the modified lighting order, to generate the threshold matrix which is possible to suppress graininess in a generated halftone dot image.

Provided is a semiconductor device in which occurrence of humps can be suppressed and variations in characteristics of the semiconductor device can be suppressed. The semiconductor device includes: an element isolation film (200) formed in a semiconductor layer, the element isolation film (200) defining an element formation region; a gate electrode (130) formed above the element formation region, the gate electrode (130) having ends respectively extending above the element isolation film (200); and impurity regions (110) which are to be a source region and a drain region which are formed in the element formation region so as to sandwich therebetween a channel formation region immediately under the gate electrode (130), the gate electrode (130) including at each of the ends thereof a high work function region (124) in which work function is higher than work function in other regions over at least a part of an interface between the element formation region and the element isolation film (200).

The invention belongs to the field of preparation of composite materials, and in particular relates to a multi-principal alloy-diamond composite material and its preparation method and application. The raw materials of the composite material include 80-95vol.% binder phase powder and 5-20vol% diamond. The binder phase powder used is composed of Cu, Ni, Co, Cr in atomic ratio (20-40):(20-30):(20-30):(10-20). The preparation method is as follows: after fully mixing the bonding phase powder and the diamond powder, the spark plasma sintering process is used to sinter at 800-1000°C to obtain the product. The material has good interfacial bonding, diamond stability, and friction and wear properties. The multi-principal element alloy-diamond composite material designed and prepared by the present invention can be used to prepare grinding diamond-like tools such as diamond grinding discs and diamond grinding wheels.