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Semiconductor element and method of manufacturing same

一种制造方法、半导体的技术，应用在半导体/固态器件制造、半导体器件、电气元件等方向，能够解决电流没有流动等问题，达到防止点状裂纹的效果

Inactive Publication Date: 2014-06-25
DOWA ELECTRONICS MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, due to the insulating properties of the sapphire substrate, current does not flow within the substrate

Method used

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  • Semiconductor element and method of manufacturing same
  • Semiconductor element and method of manufacturing same
  • Semiconductor element and method of manufacturing same

Examples

Experimental program
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Embodiment

[0098] Example

[0099] Utilize the method shown in Figure 1 and Figure 2 to manufacture image 3 LED chip shown. Specifically, first, a Cr layer was formed on a sapphire substrate by sputtering, and this Cr layer was heat-treated in an atmosphere containing ammonia, thereby forming a peeling layer (CrN layer, thickness: 18 nm). After that, an n-type Group III nitride semiconductor layer (GaN layer, thickness: 7 μm), a light emitting layer (InGaN-based MQW layer, thickness: 0.1 μm), and a p-type Group III nitride semiconductor layer (GaN layer, thickness: : 0.2 μm) to form a semiconductor laminate. Then, the semiconductor laminate was partially removed by dry etching to partially expose the sapphire substrate to form lattice-shaped grooves, thereby forming a plurality of individual island-shaped semiconductor structures each having a square cross-sectional shape. The width W of these semiconductor structures is 1200 μm, and each element is arranged in a matrix. The pitch...

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Abstract

The method of manufacturing a semiconductor device according to the present invention includes: a step of forming a semiconductor laminate on a growth substrate with a lift-off layer therebetween; a step of providing grooves in a grid pattern in the semiconductor laminate, thereby forming a plurality of semiconductor structures each having a nearly quadrangular transverse cross-sectional shape; a step of forming a conductive support body; and a step of removing the lift-off layer using a chemical lift-off process, in which step, in supplying an etchant to the grooves via through-holes provided in a portion above the grooves, the lift-off layer is etched from only one side surface of each semiconductor structure.

Description

technical field [0001] The present invention relates to a semiconductor element and a manufacturing method thereof. Background technique [0002] Examples of semiconductor elements include field effect transistors (FETs), light emitting diodes (LEDs), and the like. For LEDs, for example, group III-V semiconductors composed of compounds of group III elements and group V elements are used. [0003] A group III nitride semiconductor using Al, Ga, or In or the like as a group III element and N as a group V element has a high melting point and a high dissociation pressure of nitrogen, which makes bulk single crystal growth difficult. In addition, a conductive single crystal substrate having a large diameter cannot be utilized at low cost. Therefore, this semiconductor is generally formed on a sapphire substrate. [0004] However, since the sapphire substrate has insulating properties, current does not flow within the substrate. Therefore, light emitting diodes having a latera...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306H01L33/00
CPCH01L33/0075H01L21/7813H01L21/02365H01L33/0079H01L29/0603H01L33/20H01L21/78H01L33/0093H01L33/007
Inventor 曹明焕李锡雨鸟羽隆一门胁嘉孝
Owner DOWA ELECTRONICS MATERIALS CO LTD