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A method for preparing a high-density and low-resistivity zinc oxide ceramic target

A ceramic target and resistivity technology, which is applied in the field of preparation of high-density and low-resistivity zinc oxide ceramic targets, can solve problems such as reducing the density of the target and generating pores in the target.

Active Publication Date: 2016-09-14
广州市尤特新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

ZnO material is easy to decompose and volatilize at high temperature, resulting in pores inside the target and reducing the density of the target

Method used

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  • A method for preparing a high-density and low-resistivity zinc oxide ceramic target
  • A method for preparing a high-density and low-resistivity zinc oxide ceramic target
  • A method for preparing a high-density and low-resistivity zinc oxide ceramic target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] According to Al 2 o 3 / (ZnO+Al 2 o 3 ) with a mass ratio of 2% to weigh zinc oxide powder (D50=400nm) and alumina powder (D50=100nm), with a total mass of 200 grams. Bi 2 o 3 As a sintering aid, the addition amount is 0.02% of the total weight of doped ZnO powder. Add anhydrous alcohol for ball milling. The ball milling time is 6 hours. After ball milling, dry at 80°C. Add 30ml of polyvinyl alcohol (PVA) aqueous solution with a mass ratio of 5% to the dry mixed powder, and add PVA to the wet powder. The body was dried, and then sieved with a 100-mesh stainless steel screen. The granulated powder was pressed into a green compact of Φ35×10mm by cold isostatic pressing (CIP), and fired at 1400°C for 4 hours to obtain a target with a density of 99.8% and a resistivity of 4.5mΩ·cm.

Embodiment 2

[0019] According to Ga 2 o 3 / (ZnO+Ga 2 o 3 ) with a mass ratio of 6% to weigh zinc oxide powder (D50=800nm) and gallium oxide powder (D50=160nm), with a total mass of 200 grams. B 2 o 3 As a sintering aid, the addition amount is 0.06% of the total weight of doped ZnO powder. Add anhydrous alcohol for ball milling. The ball milling time is 6 hours. After ball milling, dry at 80°C. Add 30ml of polyvinyl alcohol (PVA) aqueous solution with a mass ratio of 5% to the dry mixed powder, and add PVA to the wet powder. The body was dried, and then sieved with a 100-mesh stainless steel screen. The granulated powder was pressed into a green compact of Φ35×10mm by cold isostatic pressing (CIP), and fired at 1400°C for 4 hours to obtain a target with a density of 99.7% and a resistivity of 4.1mΩ·cm.

Embodiment 3

[0021] Follow In 2 o 3 / (ZnO+In 2 o 3 ) with a mass ratio of 3% to weigh zinc oxide powder (D50=550nm) and indium oxide powder (D50=210nm), with a total mass of 200 grams. SiO 2 As a sintering aid, the addition amount is 0.04% of the total weight of doped ZnO powder. Add anhydrous alcohol for ball milling. The ball milling time is 6 hours. After ball milling, dry at 80°C. Add 30ml of polyvinyl alcohol (PVA) aqueous solution with a mass ratio of 5% to the dry mixed powder, and add PVA to the wet powder. The body was dried, and then sieved with a 100-mesh stainless steel screen. The granulated powder was pressed into a green compact of Φ35×10mm by cold isostatic pressing (CIP), and fired at 1400°C for 4 hours to obtain a target with a density of 99.8% and a resistivity of 4.8mΩ·cm.

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Abstract

The invention discloses a method for preparing a high-density and low-resistivity zinc oxide ceramic target. The method comprises the following steps: adding a sintering aid to ZnO-doped powder, wherein the sintering aid is one, two or three of Bi2O3, B2O3and SiO2; and sintering at the temperature which is not lower than 1200 DEG C. By adopting the method, the prepared zinc oxide ceramic target has high density and low resistivity, reduces the particle size requirements on zinc oxide powder, greatly reduces the energy consumption due to the fact that the sintering temperature is reduced. In addition, the zinc oxide ceramic target prepared by the method has superhigh density and low resistivity, so that sputtering coating can be carried out by using a direct current process in magnetron sputtering deposition, the number of discharge is reduced in the process of coating a film on the target under high voltage, the film is deposited at a high speed, and fewer knots are formed on the surface of the target.

Description

technical field [0001] The invention relates to the technical field of photoelectric functional materials, in particular to a method for preparing a high-density and low-resistivity zinc oxide ceramic target. Background technique [0002] Transparent conductive film has high visible light transmittance and low DC resistivity, and can be used as flat electrode materials for flat panel displays, light emitting diodes, thin film solar cells, and sensing layers of touch screens, and can also be used for energy saving, such as building glass surfaces and automotive glass surfaces. [0003] With the rapid development of the semiconductor industry, the serious shortage and high cost of indium resources have become more and more prominent. At present, there are many materials that may replace ITO, including Al, Ga and In-doped ZnO (AZO, GZO and IZO), F-doped SnO 2 (FTO), etc. Although FTO can meet the application requirements in terms of performance, it has poor stability in plas...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/453C04B35/622
Inventor 许积文朱归胜王华徐华蕊张小文
Owner 广州市尤特新材料有限公司
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