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A gst neutral chemical mechanical polishing fluid

A chemical mechanical and polishing liquid technology, applied in the direction of polishing composition containing abrasives, etc., can solve the problems of slow polishing rate, surface damage, poor surface effect, etc.

Active Publication Date: 2016-09-28
SHANGHAI XINANNA ELECTRONICS TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

They are all simple and easy when polishing GST, and the non-abrasive alkaline polishing liquid disclosed in the patent CN200410084490.4 has a better surface effect after polishing, but there is a problem that the polishing rate is too slow and the rate range is too narrow, and the patent CN200410066674. 8 The surface effect of the disclosed polishing liquid is poor after polishing, and there is some damage to the surface

Method used

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  • A gst neutral chemical mechanical polishing fluid
  • A gst neutral chemical mechanical polishing fluid
  • A gst neutral chemical mechanical polishing fluid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] The composition of the polishing liquid is as follows:

[0043] Unmodified silica particle content: 2wt%,

[0044] Particle size: 50nm;

[0045] Hydrogen peroxide: 5wt%;

[0046] Sodium polyacrylate: 4wt%;

[0047] pH value (ammonia water adjustment): 7;

[0048] The rest is deionized water.

[0049] The polishing test results are shown in Table 1;

Embodiment 2

[0051] The composition of the polishing liquid is as follows:

[0052] Amine modified silica particle content: 2wt%,

[0053] Particle size: 50nm;

[0054] Hydrogen peroxide: 5wt%;

[0055] Sodium polyacrylate: 4wt%;

[0056] pH value (ammonia water adjustment): 7;

[0057] The rest is deionized water.

[0058] The polishing test results are shown in Table 1;

[0059] The polished atomic particles are like figure 1 Shown on the left

Embodiment 3

[0061] The composition of the polishing liquid is as follows:

[0062] The content of silica particles coated with metal oxide: 2wt%,

[0063] Particle size: 50nm;

[0064] Hydrogen peroxide: 5wt%;

[0065] Sodium polyacrylate: 4wt%;

[0066] pH value (ammonia water adjustment): 7;

[0067] The rest is deionized water.

[0068] The polishing test results are shown in Table 1;

[0069] The polished atomic particles are like figure 1 Shown on the right

[0070] Table 1

[0071]

[0072] It can be seen from Table 1 that the polishing rate of the chemical mechanical polishing slurry provided by the present invention on the phase change material GST can be controlled from 5nm / min to 1500nm / min, while the surface roughness is reduced to the following.

[0073] figure 1 The left is the polishing result of amine-modified silica polishing particles under neutral conditions. figure 1 The right is the polishing result of silica particles coated with metal oxide under neutral conditions. by figure 2 ...

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Abstract

The invention relates to the field of chemical mechanical polishing solution and in particular relates to a chemical mechanical polishing solution which can be effectively applied to a GST phase change material. The invention provides a GST neutral chemical mechanical polishing solution. The GST neutral chemical mechanical polishing solution comprises the following components in percentage by weight: 0.2-30wt% of silicon dioxide polishing particles, 0.01-5wt% of an oxidant, 0.01-4wt% of a surfactant and the balance of a pH value regulator and deionized water, wherein the pH value of the GST neutral chemical mechanical polishing solution is 6-8. According to the neutral chemical mechanical polishing solution applied to the GST phase change material, absolute value of zeta potential of the SiO2 polishing particles, modified by adopting alkyl modification, metal oxide wrapping, amine modification, inorganic ion modification and the like, is 30-80mv while pH value is 6-8, and colloid is stable, so that the stable neutral chemical mechanical polishing solution is formed.

Description

Technical field [0001] The invention relates to the field of chemical mechanical polishing liquids, in particular to a chemical mechanical polishing that can be effectively applied to a phase change material GST. Background technique [0002] Phase change memory has the advantages of high-speed reading, high rewritable times, non-volatility, small component size, low power consumption, strong vibration and radiation resistance, and is considered by the International Semiconductor Industry Association to be the most likely to replace the current Flash memory has become the mainstream memory product in the future and the first device to become a commercial product. [0003] The basic principle of phase change memory technology is to use chalcogenide compounds as the storage medium, and use electric energy (heat) to convert the material between the crystalline state (low resistance) and the amorphous state (high resistance) to realize the writing and erasing of information , The read...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
Inventor 闫未霞王良咏刘卫丽宋志棠
Owner SHANGHAI XINANNA ELECTRONICS TECH