Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Copper-indium-gallium-selenium co-evaporation linear source apparatus and use method thereof

A copper indium gallium selenide, linear source technology, applied in vacuum evaporation plating, climate sustainability, ion implantation plating, etc., can solve problems such as uneven coating, achieve improved process effects, easy to implement, and simple structure Effect

Active Publication Date: 2014-07-02
紫石能源有限公司
View PDF7 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention provides a copper indium gallium selenide co-evaporation linear source device, which solves the problem of uneven coating caused by the distance between the glass substrate and the line source due to the sagging of the glass substrate due to its own weight, and improves the process effect.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Copper-indium-gallium-selenium co-evaporation linear source apparatus and use method thereof
  • Copper-indium-gallium-selenium co-evaporation linear source apparatus and use method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A copper indium gallium selenide co-evaporation linear source device, such as figure 1 and figure 2 As shown, it includes four groups of parallel segmented linear sources with adjustable curvature, which are evenly distributed in the evaporation zone 1 below the glass substrate.

[0024] The sectioned linear source includes five single-section linear sources 3 , and the single-section linear sources 3 are rotatably connected by joint bolts 5 and rotary joints 7 .

[0025] The two ends of the segmented linear source are provided with lateral tension regulators 6, which are rotatably connected to the two ends of the segmented linear source through joint bolts 5 and rotary joints 7. The revolving joint 7 is a semicircular revolving joint with the joint bolt 5 as a pivot.

[0026] The joint bolt 5 is also provided with a longitudinal tension regulator 8 .

[0027] Horizontal stretch regulator 6 is used to adjust the position of single-section linear source 3 in the hori...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a copper-indium-gallium-selenium co-evaporation linear source apparatus and a use method thereof, particularly to a segmented copper-indium-gallium-selenium co-evaporation linear source apparatus with adjustable curvature, and a use method thereof. The apparatus comprises plural sets of parallel linear sources, wherein the linear source is a segmented linear source with adjustable curvature. According to the present invention, the problem that drooping due to glass substrate self-weight causes change of the distance between the glass substrate and the liner source so as to cause the non-uniform plated film is well solved with the apparatus, the process effect is improved, and the apparatus has characteristics of simple structure and easy performing, and is suitable for industrial production.

Description

technical field [0001] The present invention relates to a copper indium gallium selenium co-evaporation linear source device and a use method thereof, in particular to a segmented copper indium gallium selenide co-evaporation linear source device with adjustable curvature and a use method thereof. Background technique [0002] The current photovoltaic thin film batteries can be divided into silicon-based thin film batteries, cadmium telluride thin film batteries, copper indium gallium selenide thin film batteries, organic thin film batteries and so on. Among them, copper indium gallium selenide thin film battery has the characteristics of low production cost, less pollution, no fading, and good weak light performance. One-third of the battery is called "a very promising new thin-film solar cell in the next era" internationally. In addition, the battery has a soft and uniform black appearance, which is an ideal choice for places with high requirements on appearance, such as ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/24C23C14/06H01L31/18
CPCY02P70/50
Inventor 于大洋王葛丁建
Owner 紫石能源有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products