Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Off-line monitoring method for NDC thin films

A thin-film, off-line technology, used in electrical components, circuits, semiconductor/solid-state device testing/measurement, etc., can solve the problem of high recycling costs, and achieve the effect of reducing recycling times and consumption

Active Publication Date: 2014-07-23
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF6 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Since the wafers that have been used once will be sent out for recycling, on the one hand, it not only means that a higher recycling fee is required, but on the other hand, a large number of wafers are required to be kept in the factory for backup.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Off-line monitoring method for NDC thin films
  • Off-line monitoring method for NDC thin films
  • Off-line monitoring method for NDC thin films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Specifically, image 3 A flow chart of the off-line monitoring method for NDC films according to Embodiment 1 of the present invention is schematically shown.

[0029] like image 3 shown, combined with Figure 5 , the off-line monitoring method for NDC film according to Embodiment 1 of the present invention comprises:

[0030] In the first step S1 , a protective layer 200 and an adhesive layer 300 are sequentially grown on the monitor wafer 100 from bottom to top.

[0031] Wherein, the protective layer 200 is formed by the silicon oxide thin film material by PECVD method, and the formed thickness is If the protective layer is too thin, the silicon chip cannot be protected; if the protective layer is too thick, it will easily cause waste of materials and increase the cost. The silicon chip mentioned here is the monitor wafer 100 . The material used for the adhesive layer 300 is tantalum nitride / tantalum (TaN / Ta), and the thickness of the adhesive layer 300 formed ...

Embodiment 2

[0038] Specifically, Figure 4 Based on the first embodiment of the present invention, it further schematically shows the flow chart of the off-line monitoring method for NDC film according to the second embodiment of the present invention.

[0039] like Figure 4 shown, combined with Figure 5 , according to the second embodiment of the present invention, the off-line monitoring method for NDC film includes:

[0040] In the first step S1 , a protective layer 200 and an adhesive layer 300 are sequentially grown on the monitor wafer 100 from bottom to top.

[0041] Wherein, the protective layer 200 is formed by silicon nitride film material by PECVD method, and the formed thickness is If the protective layer is too thin, the silicon chip cannot be protected; if the protective layer is too thick, it will easily cause waste of materials and increase the cost. The silicon chip mentioned here is the monitor wafer 100 . The material used for the adhesive layer 300 is tantalum n...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an off-line monitoring method for NDC thin films. The off-line monitoring method comprises the steps that firstly, a protection layer and a bonding layer are developed on a monitoring wafer in sequence; secondly, after a copper layer is developed on the bonding layer, one NDC thin film is developed on the copper layer, an optical measuring machine is used for testing the NDC thin film to monitor the parameters of the NDC thin film; thirdly, a copper layer is developed on the NDC thin film formed in the second step, one NDC thin film is developed on the newly formed copper layer, and the optical measuring machine is used for testing the new NDC thin film to monitor the parameters of the new NDC thin film; fourthly, the third step is repeatedly executed. The number of use times of the monitoring wafer is limited not to be more than five. By means of the off-line monitoring method, the monitoring wafer of the NDC thin films can be used many times continuously in a factory, the number of recycling times of the monitoring wafer of the NDC thin films is reduced, and the usage amount of the monitoring wafer of the NDC thin films is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuit manufacturing, and in particular relates to an off-line monitoring method for NDC thin films. Background technique [0002] In recent years, nitrogen-doped silicon carbide (nitride doped silicon carbide, NDC) film is often used as a dielectric barrier layer at the back end of integrated circuits. The purpose is to use the dielectric barrier layer to prevent Cu from diffusing into the medium. Current methods for monitoring NDC films such as figure 1 and figure 2 As shown, the NDC film 20 is grown directly on the bare wafer 10 first, and then the NDC film 20 is tested with a corresponding optical measuring machine to monitor parameters such as the thickness and refractive index of the NDC film 20 . [0003] However, due to the very stable chemical properties of the NDC film 20, it is insoluble in strong acids. Although the NDC film 20 is soluble in strong alkali, the stro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
CPCY02P80/30H01L22/30H01L22/12H01L22/34
Inventor 雷通桑宁波朱亚丹
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com