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A kind of film forming method of low dielectric constant film

A technology with low dielectric constant and film-forming method, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., and can solve problems such as instability and the influence of film properties

Active Publication Date: 2016-06-22
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This traditional growth method has a process from low to high liquid source flow from the second step to the third step. Due to the characteristics of the liquid source flow controller, this process generally lasts for about 10S, accounting for the entire film deposition. The time ratio is between one-fifth and one-half, and affected by the stability of the liquid source flow controller, the process of increasing the flow rate will cause great instability, which will have a great impact on the properties of the film

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  • A kind of film forming method of low dielectric constant film
  • A kind of film forming method of low dielectric constant film
  • A kind of film forming method of low dielectric constant film

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Embodiment Construction

[0018] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0019] The present invention is mainly applied to the copper interconnection process of 40 nanometers and below: in the advanced copper interconnection process, after the first layer of metal copper is formed, a film containing porogen is grown, and then the porogen is driven out by ultraviolet treatment, Form a porous film, thereby reducing the dielectric constant of the film while increasing the hardness and other mechanical properties of the film, and then forming a second layer of interconnected copper, which reduces the RC delay between the two interconnected metals, and at the same time It also ensures the mechanical performance of the dielectric layer and increases the reliability of the device. The content of the porogen is directly rela...

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Abstract

The invention provides a film forming method of a low dielectric constant film. The method comprises the steps of forming a first metal layer; growing an etching barrier layer on the first metal layer; growing the low dielectric constant film on the etching barrier layer, wherein a liquid source stable process including more than two steps is introduced when the low dielectric constant film is grown; ultravioletly curing the low dielectric constant film; and depositing a photolithographic mask on the low dielectric constant film and photoetching and etching.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, more specifically, the invention relates to a method for forming a low dielectric constant film. Background technique [0002] In the copper interconnection process below 40nm, in order to reduce the delay between lines, the dielectric layer between the two layers of interconnection metals requires a lower dielectric constant. The lower the dielectric constant, the smaller the delay and the device speed. faster. The dielectric constant of the ultra-low dielectric constant film commonly used at 40 nanometers is already below 2.6. In addition to a low dielectric constant, it is also necessary to ensure that the film has high mechanical properties, including Young's modulus, hardness, etc. At present, the most commonly used method is to use a porogen to deposit a layer of carbon-doped film by PECVD, and then drive the organic porogen out of the film by ultraviolet treatment to obtain a p...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L21/02274H01L21/76801
Inventor 桑宁波雷通贺忻
Owner SHANGHAI HUALI MICROELECTRONICS CORP