Semiconductor interconnection structure and fabrication method thereof

Abstract

The invention provides a semiconductor interconnecting structure and a manufacturing method thereof. The semiconductor interconnecting structure at least comprises a substrate, an electric dielectric film, a first interlayer dielectric, at least one conductive layer, diffusion barrier layers, metal cap layers and electric dielectric cap layers, wherein the electric dielectric film is positioned on the substrate; the first interlayer dielectric is positioned on the electric dielectric film; the conductive layers are inlaid in the electric dielectric film and the first interlayer dielectric; the diffusion barrier layers surround the peripheries and the bottoms of the conductive layers; the metal cap layers cover the conductive layers and the diffusion barrier layers; and the electric dielectric cap layers cover the metal cap layers and the first interlayer dielectric, are partially inlaid in the first interlayer dielectric and surround side surfaces of the metal cap layers. By using the semiconductor interconnecting structure and the manufacturing method thereof, the electric dielectric cap layers are partially inlaid in the first interlayer dielectric and surround the side surfaces of the metal cap layers, the adhesion performance of the conductive layers and the electric dielectric cap layers is improved, the electromigration resistance of the interconnecting structure is improved, and the reliability of components is effectively improved.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuit manufacturing, and relates to a semiconductor interconnection structure and a manufacturing method thereof. Background technique [0002] With the rapid development of integrated circuit CMOS technology in accordance with Moore's Law, interconnection delay gradually replaces device delay as the key factor affecting chip performance. The parasitic capacitance and interconnection resistance between the interconnections cause the transmission delay of the signal. Since copper has low resistivity, excellent anti-electromigration characteristics and high reliability, it can reduce the interconnection resistance of the metal, thereby reducing the overall interconnection delay effect, and has now changed from conventional aluminum interconnection to low Resistor copper interconnects. At the same time, reducing the capacitance between interconnections can also reduce the delay, and the pa...

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a semiconductor interconnection structure and a manufacturing method thereof, which are used to solve the problem of device reliability degradation caused by electromigration of conductive interconnection lines in the prior art

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