Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor interconnection structure and fabrication method thereof

A technology of interconnect structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as device reliability degradation, improve adhesion performance, and improve device reliability , Improve the effect of electromigration problems

Active Publication Date: 2016-09-14
SEMICON MFG INT (SHANGHAI) CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a semiconductor interconnection structure and a manufacturing method thereof, which are used to solve the problem of device reliability degradation caused by electromigration of conductive interconnection lines in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor interconnection structure and fabrication method thereof
  • Semiconductor interconnection structure and fabrication method thereof
  • Semiconductor interconnection structure and fabrication method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0042] see Figure 1 to Figure 7 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a semiconductor interconnecting structure and a manufacturing method thereof. The semiconductor interconnecting structure at least comprises a substrate, an electric dielectric film, a first interlayer dielectric, at least one conductive layer, diffusion barrier layers, metal cap layers and electric dielectric cap layers, wherein the electric dielectric film is positioned on the substrate; the first interlayer dielectric is positioned on the electric dielectric film; the conductive layers are inlaid in the electric dielectric film and the first interlayer dielectric; the diffusion barrier layers surround the peripheries and the bottoms of the conductive layers; the metal cap layers cover the conductive layers and the diffusion barrier layers; and the electric dielectric cap layers cover the metal cap layers and the first interlayer dielectric, are partially inlaid in the first interlayer dielectric and surround side surfaces of the metal cap layers. By using the semiconductor interconnecting structure and the manufacturing method thereof, the electric dielectric cap layers are partially inlaid in the first interlayer dielectric and surround the side surfaces of the metal cap layers, the adhesion performance of the conductive layers and the electric dielectric cap layers is improved, the electromigration resistance of the interconnecting structure is improved, and the reliability of components is effectively improved.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuit manufacturing, and relates to a semiconductor interconnection structure and a manufacturing method thereof. Background technique [0002] With the rapid development of integrated circuit CMOS technology in accordance with Moore's Law, interconnection delay gradually replaces device delay as the key factor affecting chip performance. The parasitic capacitance and interconnection resistance between the interconnections cause the transmission delay of the signal. Since copper has low resistivity, excellent anti-electromigration characteristics and high reliability, it can reduce the interconnection resistance of the metal, thereby reducing the overall interconnection delay effect, and has now changed from conventional aluminum interconnection to low Resistor copper interconnects. At the same time, reducing the capacitance between interconnections can also reduce the delay, and the pa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L23/528
Inventor 邓浩
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products