Method of depositing metal film on substrate with patterned features of high aspect ratio

A high-aspect-ratio, metal-depositing technology, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve problems such as shrinking device features and filling one or more metal layers

Pending Publication Date: 2021-09-14
TRANSCELL TECH (NANJING) INC
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

It is also becoming increasingly difficult to fill the resulting tr

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  • Method of depositing metal film on substrate with patterned features of high aspect ratio
  • Method of depositing metal film on substrate with patterned features of high aspect ratio
  • Method of depositing metal film on substrate with patterned features of high aspect ratio

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Embodiment Construction

[0047] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. The following description of at least one exemplary embodiment is merely illustrative in nature and in no way taken as limiting the invention, its application or uses. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0048]It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly dictates otherwise, the singular is intended to include ...

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Abstract

The invention relates to the technical field of metal film deposition, in particular to a method of depositing a metal film on a substrate with patterned features of a high aspect ratio. The method employs a bottom-up deposition process selected from the group consisting of depositing the substrate with the high aspect ratio the patterned features using a gas cluster ion beam containing a metal precursor; or depositing the substrate with the patterned features with the high aspect ratio by adopting gas containing the metal precursor through a photo-induced chemical vapor deposition method. According to the method, the problems of overhang and increase of a length-width ratio related to conventional PVD and CVD deposition are solved, bottom-to-top metallization of a fine semiconductor device structure with the high aspect ratio can be completed, and gap-free gap filling is achieved.

Description

technical field [0001] The invention relates to the technical field of metal film deposition, in particular to a method for depositing a metal film on a substrate with patterned features of high aspect ratio. Background technique [0002] The continual effort to improve the performance of semiconductor devices has brought about a continual effort to shrink the device feature size, thereby increasing the device performance speed and its functional capabilities. As device feature sizes decrease, device performance becomes increasingly dependent on the interconnections required between functional devices. To improve the interconnection of semiconductor designs and reduce the relative impact of device interconnection, integrated circuits are often fabricated using multilayer interconnection schemes. The multiple layers of interconnect metallization contained in these multi-chip modules are typically separated by alternating layers of isolating dielectrics, which serve as electr...

Claims

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Application Information

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IPC IPC(8): C23C16/48C23C16/08C23C16/18H01L21/285
CPCC23C16/48C23C16/486C23C16/08C23C16/18H01L21/28506
Inventor 孙昊辰
Owner TRANSCELL TECH (NANJING) INC
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