Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method of depositing metal film on substrate with patterned features of high aspect ratio

A high-aspect-ratio, metal-depositing technology, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve problems such as shrinking device features and filling one or more metal layers

Pending Publication Date: 2021-09-14
TRANSCELL TECH (NANJING) INC
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is also becoming increasingly difficult to fill the resulting trench with one or more metal layers due to shrinking device features

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of depositing metal film on substrate with patterned features of high aspect ratio
  • Method of depositing metal film on substrate with patterned features of high aspect ratio
  • Method of depositing metal film on substrate with patterned features of high aspect ratio

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. The following description of at least one exemplary embodiment is merely illustrative in nature and in no way taken as limiting the invention, its application or uses. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0048]It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly dictates otherwise, the singular is intended to include ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of metal film deposition, in particular to a method of depositing a metal film on a substrate with patterned features of a high aspect ratio. The method employs a bottom-up deposition process selected from the group consisting of depositing the substrate with the high aspect ratio the patterned features using a gas cluster ion beam containing a metal precursor; or depositing the substrate with the patterned features with the high aspect ratio by adopting gas containing the metal precursor through a photo-induced chemical vapor deposition method. According to the method, the problems of overhang and increase of a length-width ratio related to conventional PVD and CVD deposition are solved, bottom-to-top metallization of a fine semiconductor device structure with the high aspect ratio can be completed, and gap-free gap filling is achieved.

Description

technical field [0001] The invention relates to the technical field of metal film deposition, in particular to a method for depositing a metal film on a substrate with patterned features of high aspect ratio. Background technique [0002] The continual effort to improve the performance of semiconductor devices has brought about a continual effort to shrink the device feature size, thereby increasing the device performance speed and its functional capabilities. As device feature sizes decrease, device performance becomes increasingly dependent on the interconnections required between functional devices. To improve the interconnection of semiconductor designs and reduce the relative impact of device interconnection, integrated circuits are often fabricated using multilayer interconnection schemes. The multiple layers of interconnect metallization contained in these multi-chip modules are typically separated by alternating layers of isolating dielectrics, which serve as electr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/48C23C16/08C23C16/18H01L21/285
CPCC23C16/48C23C16/486C23C16/08C23C16/18H01L21/28506
Inventor 孙昊辰
Owner TRANSCELL TECH (NANJING) INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com