Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Electromigration resistant metal layer structure and process method thereof

A process method and metal layer technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems that metal AL is prone to electromigration, etc., and achieve the effect of improving the anti-electromigration ability

Inactive Publication Date: 2019-04-05
58TH RES INST OF CETC
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide an anti-electromigration metal layer structure and its process method to solve the problem that the current metal AL is prone to electromigration at high temperatures

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electromigration resistant metal layer structure and process method thereof
  • Electromigration resistant metal layer structure and process method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Embodiment 1 of the present invention provides an anti-electromigration metal layer structure, which is an anti-electromigration structure for a metal layer in back-end manufacturing. The structure of the anti-electromigration metal layer structure is as follows figure 1 As shown, it includes two aluminum layers, for the convenience of description, the two aluminum layers are respectively represented as the first aluminum layer 11 and the second aluminum layer 12; and, the first aluminum layer 11 and the second aluminum layer The thickness of 12 is 2000~3000Å, and the thinner thickness of the aluminum layer helps to limit the boundary diffusion of large grains. A central TiN layer 10 is deposited between the first aluminum layer 11 and the second aluminum layer 12; wherein, the thickness of the central TiN layer 10 is 50-150 Å, as the first aluminum layer 11 and the The barrier layer of the second aluminum layer 12.

[0026] Specifically, a first TiN layer 21 and a fi...

Embodiment 2

[0028] Embodiment 2 of the present invention provides a process method for an anti-electromigration metal layer structure, and its schematic flow chart is as follows figure 2 shown. Described processing method comprises the steps:

[0029] S21, depositing a first aluminum layer;

[0030] S22. Depositing a central TiN layer on the first aluminum layer;

[0031] S23, depositing a second aluminum layer on the central TiN layer.

[0032] Specifically, firstly, the first Ti layer 31 and the first TiN layer 21 are sequentially deposited on the insulating dielectric layer, and the first Al layer 11 is deposited on the first TiN layer 21 . A central TiN layer 10 is deposited on the first aluminum layer 11 , and the thickness of the central TiN layer 10 is 50˜150 Å; a second aluminum layer 12 is deposited on the central TiN layer 10 . Finally, a second TiN layer 22 and a second Ti layer 32 are sequentially deposited on the second aluminum layer 12 .

[0033] Preferably, copper is...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses electromigration resistant metal layer structure and a process method thereof, which belongs to the technical field of integrated circuit manufacturing. The electromigration resistant metal layer structure is an electromigration resistant structure design for any one of metal layers in back end fabrication, and includes two aluminum layers, where a central TiN layeris deposited between the two aluminum layers. The present invention further provides a process method of an electromigration resistant metal layer structure: depositing a first aluminum layer; depositing a central TiN layer on the first aluminum layer; and depositing a second aluminum layer on the central TiN layer. On the one hand, the aluminum layer with thinner thickness helps to limit boundary diffusion of coarse grains. On the other hand, a small amount of Si component in the aluminum layer is easily precipitated at a high temperature, and electromigration of the aluminum layer easily occurs. Therefore, the TiN layer can block mutual penetration of Si and Al.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to an anti-electromigration metal layer structure and a process method thereof. Background technique [0002] Since entering the deep submicron era, the metal electromigration (EM) phenomenon has been recognized as one of the main factors leading to chip failure. The internal cause of electromigration is the non-uniformity of the internal structure of the metal thin film, and the external cause is the excessive current density. big. The electromigration reliability of metal thin films in semiconductors has always been a research hotspot in the semiconductor manufacturing industry. Although the current copper interconnection process has been relatively perfect, it requires very high process level and high manufacturing costs. Therefore, most FABs still use the aluminum interconnection process with high process maturity and high cost performance. With the co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/532H01L21/768
CPCH01L21/76841H01L23/53223
Inventor 纪旭明顾祥张庆东吴建伟洪根深
Owner 58TH RES INST OF CETC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com