Metal interconnection structure and manufacture method thereof
A technology of metal interconnection structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of high mechanical strength requirements of CNT through holes, and achieves guaranteed density, improved performance, and is conducive to high The effect of density growth
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[0032] In order to make the purpose and features of the present invention more obvious and easy to understand, the following will further describe the specific embodiments of the present invention in conjunction with the accompanying drawings. However, the present invention can be realized in different forms, and should not be considered as being limited to the described embodiments .
[0033] Please refer to figure 2 , the present invention proposes a method for manufacturing a metal interconnection structure, comprising the following steps:
[0034] S1, providing a semiconductor substrate formed with a previous metal interconnect layer and a previous interconnect dielectric layer, the metal interconnect layer is formed in the trench of the previous interconnect dielectric layer;
[0035] S2, etching back the previous metal interconnection layer;
[0036] S3, forming a plurality of vertical carbon nanotubes on the previous metal interconnection layer after etching back;
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