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Metal interconnection structure and manufacture method thereof

A technology of metal interconnection structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of high mechanical strength requirements of CNT through holes, and achieves guaranteed density, improved performance, and is conducive to high The effect of density growth

Active Publication Date: 2014-08-13
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

one is Figure 1A The process (a) shown in this process (a) uses catalyst particles (catalyst particle) as the growth source in advance, relying on the guidance of the electric field to form vertical CNTs on the interconnection layer Metal1, and form CNTs between adjacent CNTs. hole (via), and then use the CVD method to form a deposited dielectric layer, which is equivalent to epitaxially growing a uniform thickness catalytic epitaxial layer (blanket catalyst film) SiO in the through hole 2 , and then form the interconnection layer Metal2, whose defect is that the mechanical strength of the CNT through hole is relatively high; the other is Figure 1B The process (b) shown in the process (b) is similar to the traditional single damascene, in which the catalyst particle is used as the growth source in the dielectric layer via (via) that has been formed, relying on the crowding effect (crowding -effect), so that CNTs grow vertically in the through holes of the dielectric layer, the defect is that the density of CNTs grown by this process is lower than that of CNTs grown by process (a)

Method used

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  • Metal interconnection structure and manufacture method thereof
  • Metal interconnection structure and manufacture method thereof
  • Metal interconnection structure and manufacture method thereof

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Embodiment Construction

[0032] In order to make the purpose and features of the present invention more obvious and easy to understand, the following will further describe the specific embodiments of the present invention in conjunction with the accompanying drawings. However, the present invention can be realized in different forms, and should not be considered as being limited to the described embodiments .

[0033] Please refer to figure 2 , the present invention proposes a method for manufacturing a metal interconnection structure, comprising the following steps:

[0034] S1, providing a semiconductor substrate formed with a previous metal interconnect layer and a previous interconnect dielectric layer, the metal interconnect layer is formed in the trench of the previous interconnect dielectric layer;

[0035] S2, etching back the previous metal interconnection layer;

[0036] S3, forming a plurality of vertical carbon nanotubes on the previous metal interconnection layer after etching back;

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Abstract

The invention provides a metal interconnection structure and a manufacture method thereof. The growth area of a carbon nano tube is increased through a groove, formed through etching, of a previous metal interconnection layer, high-density growth of the carbon nano tube is facilitated, the formed high-density carbon nanao tube can serve as a growth source of a regenerated carbon nano tube in a subsequent through hole, density of the regenerated carbon nano tube in the through hole is improved, and accordingly the density of the carbon nano tubes growing from through holes is guaranteed and performance of the metal interconnection structure is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a metal interconnection structure and a manufacturing method thereof. Background technique [0002] With the further shrinking of the critical dimensions of copper interconnection, it is difficult to meet the electrical requirements by relying solely on copper as a conductor, so researchers have begun to experiment with some new materials to replace copper. [0003] Carbon nanotubes (CNTs) are currently used as a potential replacement material for copper interconnects, which can significantly reduce wire resistance and do not suffer from electromigration, but how to integrate CNTs into copper interconnects is a big challenge. [0004] Please refer to Figure 1A with 1B , two feasible integration processes are proposed in the prior art (Towards Future VLSI Interconnects Using Aligned Carbon Nanotubes, 2011IEEE), but both face their own problems. one is Figure 1A The p...

Claims

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Application Information

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IPC IPC(8): H01L21/768H01L23/532
CPCH01L21/76838H01L23/53276H01L2221/1068
Inventor 鲍宇
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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