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KTP crystal growth method suitable for PPKTP device production

A crystal growth and crystal technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems that quasi-phase matching cannot be realized, the output laser stability decreases, and the X-direction OPO oscillation threshold is high.

Active Publication Date: 2011-09-28
BEIJING SINOMA SYNTHETIC CRYSTALS CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, since the uniformity of refractive index and electrical conductivity of the crystal is a function of the growth temperature, the uniformity of the crystal grown by the general growth method is spherically symmetrical with the seed crystal as the center. The uniformity of the refractive index and conductivity far exceeds the requirements of PPKTP technology for wafer quality, making quasi-phase matching impossible to achieve
At the same time, this inhomogeneity will lead to a higher OPO oscillation threshold in the X direction, and a decrease in the stability of the output laser.

Method used

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  • KTP crystal growth method suitable for PPKTP device production
  • KTP crystal growth method suitable for PPKTP device production
  • KTP crystal growth method suitable for PPKTP device production

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Embodiment 1

[0027] Embodiment 1: the growth step that is suitable for making the KTP crystal of PPKTP according to the present invention is:

[0028] A) Making the seed crystal: cut a 1mm thick seed wafer along the XZ plane from the KTP original crystal blank with the longest X direction available, process an XY plane perpendicular to the Z direction at the longest position in the X direction, and then take the center of the XY plane The line is chamfered to the XZ plane at both ends, and the range of the apex angle α formed is between 0°figure 1 and figure 2 shown.

[0029] B) Immerse the growth surface of the seed crystal into the growth melt, wherein the depth of immersion can be less than 2mm, preferably between 0.5mm-1mm, to grow the crystal.

[0030] The growth melt in this step is the K6 flux KTP melt synthesized at high temperature, and the preparation method is: calculate KH according to the obtained KTP and K6 ratio 2 PO 4 、K 2 HPO 4 、TiO 2 The raw materials are weighed, ...

Embodiment 2

[0043] Select high-quality seed crystals with a length of 45mm in the X direction. It is required that the seed crystals have no cracks and no macroscopic interlayers on the growth surface of the seed crystals. They are processed into 20mm high Z-direction, 1mm thick flakes, and the 45mm long X-direction side with better quality is pressed 60 degrees. Process the growth surface at the top angle, put it into a saturated solution with a ratio of KTP:K6=1.186mol:1mol, rotate the seed crystal at 15 rpm, put in fragmented crystals and make them grow until the side length is about 5mm. Friction roughening The X surface of the growing crystal is cooled slowly and grows after two months. According to the requirements, the X-direction 55mm long seed crystal is cut and the growth surface is processed, and the growth is carried out again under this system, but no broken crystals are used for this growth. And control the melt so that there is no spontaneous crystallization, and grow out 55...

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Abstract

The invention discloses a KTP crystal growth method suitable for manufacturing a PPKTP device. The method comprises the following steps that: A) a long X-direction platy seed crystal is manufactured, a seed plate is cut along an XZ plane in the obtained longest X-direction KTP original crystal blank, an XY plane is processed at the longest X-direction position perpendicular to the Z direction, the XZ plane on the two ends of the X-direction center line is chamfered along the X-direction center line on the XY plane, the range of the formed vertex angle alpha is more than 0 degree and less than or equal to 180 degrees, and a beveling surface is ground and is taken as a seed crystal growth plane; and B) the seed crystal is immersed into a melting solution to cultivate according to the growth plane of the seed crystal, and the growth of the crystal is performed. The method utilizes the long X-direction line seed crystal to control the speed rate of the selective growth in the crystal growth process, and further prolongs the X-direction length of the seed crystal by the coarse X plane; moreover, compared with the ordinary fluxing agent growth method, the X-direction index of refraction and the electrical conductivity uniformity of the generated crystal are greatly improved, and the generated crystal is suitable for producing an optical parameter device with high quality and a PPKTP device.

Description

technical field [0001] The invention relates to a crystal growth method, in particular to a KTP crystal (potassium titanyl phosphate crystal) growth method suitable for making PPKTP devices (periodically polarized potassium titanyl phosphate). The method is a further improvement on the existing flux crystal growth method. Background technique [0002] Potassium titanyl phosphate (KTiOPO 4 KTP for short) crystal is a kind of nonlinear optical crystal with superior comprehensive performance. It has the advantages of large nonlinear coefficient, good optical uniformity, good thermal conductivity, wide transmission band, etc., and has good physical, chemical and mechanical properties. From crystal growth and processing to optoelectronic devices, a relatively large-scale industrial market has been formed internationally. [0003] The main method of this kind of crystal growth is the flux method. After more than 20 years of development, the process has been relatively mature, a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/22C30B29/14C30B9/00C30B11/14
Inventor 沈德忠黄朝恩师瑞泽胡永岚肖亚波王国影高山虎葛世艳苏贞珍尹利君王忠何庭秋
Owner BEIJING SINOMA SYNTHETIC CRYSTALS CO LTD
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