36results about How to "Increase the growth area" patented technology

The invention discloses a laser preparation method for large-area patterned graphene. The preparation method comprises the following steps: (1) a solid carbon source is dispersed in an organic solvent to obtain a dispersion liquid, and the surface of a metal substrate is coated with the dispersion liquid in a spinning manner to obtain a uniform carbon coating; (2) under the condition of the protection of inert gas, a high power density laser beam is adopted to irradiate the carbon coating, and carbon atoms in the solid carbon source and metal atoms in the metal substrate are formed into a solid solution under function of irradiation; the high power density laser beam is moved away or the irradiation operation is stopped, when the metal substrate is cooled, the oversaturated solid solution is formed, and the carbon atoms are separated out of the oversaturated solid solution and formed on the surface of the substrate to form graphene. The invention provides a novel method which is convenient, fast, low in cost and high in efficiency and prepares the large-area patterned graphene. The product obtained through the method can be applied to the following fields: next generation microcomputers, flat-panel displays, super-capacitors, transparent conductive electrodes, sensors, solar batteries, micro-nano electronic devices, photoelectronic devices, self-spinning quantum devices, novel compound materials and so on.

The invention discloses a nano-structure three-dimensional distributed super-amphiphobic metal surface and a preparation method thereof and belongs to the technical field of function materials. The super-amphiphobic surface is of a nano grass-shaped structure formed by mutually winding flexible thin nano ribbon-shaped units distributed on the surface of a three-dimensional micrometer array structure which is distributed on a metal substrate. The preparation method comprises the steps that the surface of the metal substrate is subjected to patterning erosion through ultrafast laser to form thethree-dimensional micrometer structure at first, then, the nano grass-shaped structure is formed on the surface of the three-dimensional micrometer structure through chemical bath oxidization, surfacemodification treatment is conducted through (Heptadecafluoro-1,1,2,2-tetradecyl)trimethoxysilane, and the super-hydrophobic super-oleophobic function is achieved. The super-amphiphobic surface has excellent durability, the preparation method of the super-amphiphobic surface is simple, easy to implement, fast, efficient and capable of achieving large-area preparation, the self cleaning performancecan be maintained for a long time under the outdoor environment and other multiple outside environments, and the super-amphiphobic metal surface has wide application prospects in the fields of national defense, industrial production, daily life and the like.

The carbon nanotube preparing apparatus includes one reaction cavity with gas inlet in the bottom and one gas exhaust port in the top and opposite to the gas inlet; one base bearer located inside the reaction cavity and between the gas inlet and the gas exhaust port; and at least one base on the base bearer and with flow guiding holes and one catalyst on its surface. The present invention also provides process of preparing carbon nanotube with the said apparatus.

The invention belongs to the technical field of plant planting and discloses a method for planting suaeda salsa in a coastal beach and an application. The method comprises the steps of 1, planting area selection, selecting an area suitable for planting from a mid-tide area and a high-tide area of an intertidal zone and building a wave blocking zone; 2, seeding, namely selecting temperature, seeding rate and seeding time; and 3, management after seeding, namely carrying out net covering, diversion and drainage for preventing flooding. The step 1 specifically comprises the content of selecting the area suitable for planting from the mid-tide area and the high-tide area of the intertidal zone; building the water blocking zone in a tidewater entering direction and building a dam in an offshoredirection in the planting area; or planting phragmites australis, high-stalk straws and phyllostachys pubescens in the tidewater entering direction in the planting area. According to the method, thesuaeda salsa is planted in a suitable environment on the beach, so that the growth area of the suaeda salsa is increased, the growth environment of the suaeda salsa on the beach is repaired and a support is provided for the stabilization of the biological diversity on the beach.

The invention provides a method of dressing the mandarin fish pond using cassia tora and preventing the mandarin fish from diseases. In the mandarin fish culture period, the cassia tora plant is harvested, after being tied in bundles, the cassia tora plant bundles are put into a pond, and topdressing is conducted on the mandarin fish pond and measures of disease prevention are taken for the mandarin fishes. According to the method, fresh cassia plants are adopted for enriching the pond water, the weaknesses that the ordinary fertilizers are difficult to store and inconvenient to use are overcome; in addition to the rich water function, the method has also the functions of stress reduction and disease resistance for the mandarin fish, the disease resistance of the mandarin fish is increased, the cultivate rate of the mandarin fish and the economic benefits are improved, and the ability to resist disease risks of mandarin fish culturing is facilitated.

The invention relates to an etching method for improving Web Growth. The method includes: cleaning the processed SiC substrate with ultrasonic, alkaline mixture, concentrated sulfuric acid mixture, acidic mixture, and HF acid solution; using epitaxy The furnace performs in-situ etching on the processed SiC substrate; performs homogeneous epitaxy on the processed SiC substrate; performs cantilever growth at the inner corner of the etched pattern on the processed SiC substrate to form SiC epitaxial wafers, and the grown cantilever is defect-free carbon Silicon double atomic layer structure; the grown cantilever heals to form a carbon silicon double atomic layer film covering the etching mesa area. The invention improves the etching method of Web Growth, realizes the epitaxy of a thin layer of completely defect-free cantilever on the topmost etching table of the positive axis silicon carbide substrate, effectively shortens the epitaxy time and increases the film growth area.

The present invention relates to the field of environmental protection engineering materials, especially a mold for producing ecological concrete four-linked balls and its application method; The mold for connecting balls and its application method include a box body, a circular protrusion extending upward in the middle of the bottom surface of the box body, a hemispherical groove at four diagonal positions on the bottom of the box body, and four There is a gap between the hemispherical grooves, and the bottom surface of each hemispherical groove is attached to the bottom surface of the box, and the upper surfaces of the four hemispherical grooves are flush with each other; at the edge of each hemispherical groove There are arc blocks extending upward respectively; through the unique structural design of the mold, the ecological concrete four-linked ball produced and processed by this mold is laid on the river embankment, which is conducive to the ecological construction on both sides of the river and increases the growth area of ​​vegetation.

The invention relates to the field of environmental protection engineering materials, in particular to an ecological concrete quadruple ball with strong ability to attach vegetation on the surface, which includes a base plate and a single ball, the base plate is a rectangular structure, and the base plate and the single ball are integrally formed of concrete A single ball is arranged at four diagonal positions on the upper surface of the substrate. The single ball is a hemispherical structure. The plane of the single ball is attached to the substrate. There is a gap between the single balls. There are through holes, the ecological concrete four-linked ball and its production method, the ecological concrete four-linked ball produced by it is laid on the embankment of the river, which is beneficial to the ecological construction on both sides of the river, and increases the contact area of ​​the upper surface of the substrate and improves the vegetation. The growth area is large, and the through holes or gaps are conducive to the growth of small trees, so that they are firmly connected with the river embankment. At the same time, the compressive strength of the ecological concrete four-linked ball of the structure can reach more than C12, and its porosity can reach 20%. .

The invention discloses a hollow open gelatin cell micro-carrier and a preparation method and an application thereof. The preparation method includes that using gelatin and bee wax as raw materials, using a double-emulsion method to prepare a gelatin-bee wax micro-ball, remodeling in ethanol / water solution, cross-linking in glutaraldehyde / ethanol solution, and extruding out a small bee wax ball from the gelatin micro-ball to obtain the hollow open gelatin micro-carrier. The hollow open gelatin cell micro-carrier uses the bee wax as pore-foaming agent and uses the double-emulsion method to prepare the gelatin micro-ball, after heating and drying ethanol / water, a dense shell layer is formed at the surface of the gelatin, and glutaraldehyde / ethanol solution is added to enable the surface to cross-link; force is exerted to extrude the micro-ball after being dried, and the small bee wax ball in the gelatin micro-ball is stressed to enable the cross-linked layer of the surface to break to obtain the hollow open shell structure gelatin micro-carrier; the micro-carrier is featured with low density and high specific surface area and enables the large-scale cell culture to be possible; the hollow open gelatin cell micro-carrier is excellent in biological degradability and biocompatibility and capable of being used as stuffing repairing material for the bone defect in the tissue engineering.

The invention belongs to the technical field of plant planting, and discloses a planting method and application of Suaeda salsa in coastal flats, step 1, planting areas, selecting suitable planting areas in the mid-tidal zone and high-tide zone of the intertidal zone, and constructing a wave-stopping belt; Step 2, sowing, the selection of temperature, seeding rate, and sowing time; Step 3, post-sowing management, covering the net, draining water and preventing flooding. Step 1 specifically includes: selecting an area suitable for planting in the mid-tidal area and high-tide area of ​​the intertidal zone; building a wave-resisting belt in the direction of the tidal water, building a dam in the offshore direction of the planting area, or planting reeds and tall straw in the direction of the tidal water in the planting area , Bamboo pole. The invention plants the Suaeda salsa in the suitable environment of the tidal flat, increases the growth area of ​​the Suaeda salsa, restores the habitat of the Suaeda salsa in the tidal flat, and provides support for the stability of the biological diversity of the tidal flat.

The invention discloses a nano-structure three-dimensional distributed super-amphiphobic metal surface and a preparation method thereof and belongs to the technical field of function materials. The super-amphiphobic surface is of a nano grass-shaped structure formed by mutually winding flexible thin nano ribbon-shaped units distributed on the surface of a three-dimensional micrometer array structure which is distributed on a metal substrate. The preparation method comprises the steps that the surface of the metal substrate is subjected to patterning erosion through ultrafast laser to form thethree-dimensional micrometer structure at first, then, the nano grass-shaped structure is formed on the surface of the three-dimensional micrometer structure through chemical bath oxidization, surfacemodification treatment is conducted through (Heptadecafluoro-1,1,2,2-tetradecyl)trimethoxysilane, and the super-hydrophobic super-oleophobic function is achieved. The super-amphiphobic surface has excellent durability, the preparation method of the super-amphiphobic surface is simple, easy to implement, fast, efficient and capable of achieving large-area preparation, the self cleaning performancecan be maintained for a long time under the outdoor environment and other multiple outside environments, and the super-amphiphobic metal surface has wide application prospects in the fields of national defense, industrial production, daily life and the like.

The invention relates to a SiC substrate homoepitaxy carbon silicon double-atomic-layer film method. The method is characterized by comprising the steps of placing a processed SiC substrate into an epitaxy furnace, vacuumizing the epitaxy furnace, filling hydrogen into the epitaxy furnace to keep the pressure as 100mbar, heating the epitaxy furnace, carrying out in-site etching on the processed SiC substrate, keeping the temperature at 1600 DEG C, filling SiH4 into the epitaxy furnace at the speed of 3ml / min and C3H8 into the epitaxy furnace at the speed of 1.1ml / min, filling carrier hydrogen into the epitaxy furnace at the speed of 4500ml / min, and carrying out cantilever growth at the inner corner position of an etched pattern of the SiC substrate to generate a SiC epitaxial wafer. A grown cantilever is of a non-defective carbon silicon double-atomic-layer structure. According to the SiC substrate homoepitaxy carbon silicon double-atomic-layer film method, a layer of thin complete non-defective cantilever is formed in an etching tabletop of the top end of the positive-axis silicon carbide substrate in an extending mode. Furthermore, epitaxy time is effectively shortened, and the film growth area is improved.

The invention relates to a bioreactor (1) for the purification of waters, said reactor comprising a cross-sectionally essentially circular or elliptical tank section (2) provided with inlet means (5) for water to be purified and outlet means (6) for purified water. The tank holds thereinside carrier material (3) on which a biofilm may develop. The tank is further provided with means (4) for supplying a fluid which contains a reaction gas required by the purification process, such that the water to be purified develops gas bubbles containing a reaction gas. The tank section is adapted to be essentially full of water during the purification process. The fluid supply means (4) are disposed on the tank wall and the reactor comprises control means for operating the fluid supply means in such away that a spinning motion of the carrier, the water, and at least some of said reaction-gas bearing bubbles is effected thereby around a rotation centerline passing essentially through the tank 's cross-sectional center. The control means are adapted to optionally effect a deactivation of the fluid supply means at desired times and / or a replacement of the fluid with an oxygen-free fluid for providing an anaerobic process. The invention relates also to a method for the biological purification of waters in a bioreactor.

The present application relates to a polycrystalline gallium nitride growth device. The polycrystalline gallium nitride growth device includes a reaction vessel, the reaction vessel is provided with a first chamber main body and a second chamber main body communicating with each other in the axial direction, the first chamber main body is connected with at least two gas inflow channels, and the first chamber main body is connected with at least two gas inflow channels. The main body of the second chamber is provided with a cylinder; the cylinder has openings corresponding to at least two gas inflow passages, and the cylinder is provided with a plurality of components with through holes at intervals in the axial direction. The above polycrystalline GaN growth device can effectively increase the yield of polycrystalline GaN without increasing the size of the polycrystalline GaN growth device.

The invention relates to a SiC substrate homogeneous Web Growth epitaxy method. The method comprises the steps of choosing a positive-axis 4H or 6H original SiC substrate, carrying out developing process and dry etching process on the original SiC substrate to obtain a processed SiC substrate, utilizing an epitaxy furnace to carry out in-situ etching on the processed SiC substrate, carrying out homogeneous epitaxy processing on the processed SiC substrate, carrying out cantilever growth at the inner corner position of an etched pattern of the processed SiC substrate to generate a SiC epitaxy wafer, regrowing a grown cantilever into a layer of carbon silicon double-atomic-layer film to cover an etched tabletop area, and taking the grown SiC epitaxy wafer out of the epitaxy furnace. The grown cantilever is of a non-defective carbon silicon double-atomic-layer structure. According to the SiC substrate homogeneous Web Growth epitaxy method, a layer of thin complete non-defective cantilever is formed in an etching tabletop of the top end of the positive-axis silicon carbide substrate in an extending mode. Furthermore, epitaxy time is effectively shortened, and the film growth area is improved.

The invention relates to a method for culturing golden flower fungus powder by utilizing tea leftovers. The method comprises the following steps: (1) screening golden flower fungus strains from Fuzhuan tea; (2) preparing a modified PDA fermentation liquid, inoculating golden flower fungi in a sterile operation manner and culturing; (3) preparing a golden flower fungus spore inoculation liquid; (4) smashing the tea leftovers and preparing a culture medium; (5) feeding the golden flower fungus spore inoculation liquid into a disinfection sprinkling can; (6) finishing nutrition growth and promoting the generation of cleistothecium; (7) fermenting; and (8) drying the culture medium and screening, thereby obtaining the golden flower fungus powder with a high purity. According to the method, the fermentation is finished by one step, so that the requirement to equipment is low; meanwhile, the pollution of sundry fungi is reduced, so that the probability of the pollution caused by the sundry fungi is decreased; the cost is low; the growth area is enlarged, so that the high yield of the golden flower fungus powder is realized.

The invention discloses a KTP crystal growth method suitable for manufacturing a PPKTP device. The method comprises the following steps that: A) a long X-direction platy seed crystal is manufactured, a seed plate is cut along an XZ plane in the obtained longest X-direction KTP original crystal blank, an XY plane is processed at the longest X-direction position perpendicular to the Z direction, the XZ plane on the two ends of the X-direction center line is chamfered along the X-direction center line on the XY plane, the range of the formed vertex angle alpha is more than 0 degree and less than or equal to 180 degrees, and a beveling surface is ground and is taken as a seed crystal growth plane; and B) the seed crystal is immersed into a melting solution to cultivate according to the growth plane of the seed crystal, and the growth of the crystal is performed. The method utilizes the long X-direction line seed crystal to control the speed rate of the selective growth in the crystal growth process, and further prolongs the X-direction length of the seed crystal by the coarse X plane; moreover, compared with the ordinary fluxing agent growth method, the X-direction index of refraction and the electrical conductivity uniformity of the generated crystal are greatly improved, and the generated crystal is suitable for producing an optical parameter device with high quality and a PPKTP device.