36results about How to "Increase the growth area" patented technology

The invention discloses a hollow open gelatin cell micro-carrier and a preparation method and an application thereof. The preparation method includes that using gelatin and bee wax as raw materials, using a double-emulsion method to prepare a gelatin-bee wax micro-ball, remodeling in ethanol / water solution, cross-linking in glutaraldehyde / ethanol solution, and extruding out a small bee wax ball from the gelatin micro-ball to obtain the hollow open gelatin micro-carrier. The hollow open gelatin cell micro-carrier uses the bee wax as pore-foaming agent and uses the double-emulsion method to prepare the gelatin micro-ball, after heating and drying ethanol / water, a dense shell layer is formed at the surface of the gelatin, and glutaraldehyde / ethanol solution is added to enable the surface to cross-link; force is exerted to extrude the micro-ball after being dried, and the small bee wax ball in the gelatin micro-ball is stressed to enable the cross-linked layer of the surface to break to obtain the hollow open shell structure gelatin micro-carrier; the micro-carrier is featured with low density and high specific surface area and enables the large-scale cell culture to be possible; the hollow open gelatin cell micro-carrier is excellent in biological degradability and biocompatibility and capable of being used as stuffing repairing material for the bone defect in the tissue engineering.

The invention belongs to the technical field of plant planting, and discloses a planting method and application of Suaeda salsa in coastal flats, step 1, planting areas, selecting suitable planting areas in the mid-tidal zone and high-tide zone of the intertidal zone, and constructing a wave-stopping belt; Step 2, sowing, the selection of temperature, seeding rate, and sowing time; Step 3, post-sowing management, covering the net, draining water and preventing flooding. Step 1 specifically includes: selecting an area suitable for planting in the mid-tidal area and high-tide area of ​​the intertidal zone; building a wave-resisting belt in the direction of the tidal water, building a dam in the offshore direction of the planting area, or planting reeds and tall straw in the direction of the tidal water in the planting area , Bamboo pole. The invention plants the Suaeda salsa in the suitable environment of the tidal flat, increases the growth area of ​​the Suaeda salsa, restores the habitat of the Suaeda salsa in the tidal flat, and provides support for the stability of the biological diversity of the tidal flat.

The invention discloses a nano-structure three-dimensional distributed super-amphiphobic metal surface and a preparation method thereof and belongs to the technical field of function materials. The super-amphiphobic surface is of a nano grass-shaped structure formed by mutually winding flexible thin nano ribbon-shaped units distributed on the surface of a three-dimensional micrometer array structure which is distributed on a metal substrate. The preparation method comprises the steps that the surface of the metal substrate is subjected to patterning erosion through ultrafast laser to form thethree-dimensional micrometer structure at first, then, the nano grass-shaped structure is formed on the surface of the three-dimensional micrometer structure through chemical bath oxidization, surfacemodification treatment is conducted through (Heptadecafluoro-1,1,2,2-tetradecyl)trimethoxysilane, and the super-hydrophobic super-oleophobic function is achieved. The super-amphiphobic surface has excellent durability, the preparation method of the super-amphiphobic surface is simple, easy to implement, fast, efficient and capable of achieving large-area preparation, the self cleaning performancecan be maintained for a long time under the outdoor environment and other multiple outside environments, and the super-amphiphobic metal surface has wide application prospects in the fields of national defense, industrial production, daily life and the like.

The invention relates to a SiC substrate homoepitaxy carbon silicon double-atomic-layer film method. The method is characterized by comprising the steps of placing a processed SiC substrate into an epitaxy furnace, vacuumizing the epitaxy furnace, filling hydrogen into the epitaxy furnace to keep the pressure as 100mbar, heating the epitaxy furnace, carrying out in-site etching on the processed SiC substrate, keeping the temperature at 1600 DEG C, filling SiH4 into the epitaxy furnace at the speed of 3ml / min and C3H8 into the epitaxy furnace at the speed of 1.1ml / min, filling carrier hydrogen into the epitaxy furnace at the speed of 4500ml / min, and carrying out cantilever growth at the inner corner position of an etched pattern of the SiC substrate to generate a SiC epitaxial wafer. A grown cantilever is of a non-defective carbon silicon double-atomic-layer structure. According to the SiC substrate homoepitaxy carbon silicon double-atomic-layer film method, a layer of thin complete non-defective cantilever is formed in an etching tabletop of the top end of the positive-axis silicon carbide substrate in an extending mode. Furthermore, epitaxy time is effectively shortened, and the film growth area is improved.

The present application relates to a polycrystalline gallium nitride growth device. The polycrystalline gallium nitride growth device includes a reaction vessel, the reaction vessel is provided with a first chamber main body and a second chamber main body communicating with each other in the axial direction, the first chamber main body is connected with at least two gas inflow channels, and the first chamber main body is connected with at least two gas inflow channels. The main body of the second chamber is provided with a cylinder; the cylinder has openings corresponding to at least two gas inflow passages, and the cylinder is provided with a plurality of components with through holes at intervals in the axial direction. The above polycrystalline GaN growth device can effectively increase the yield of polycrystalline GaN without increasing the size of the polycrystalline GaN growth device.

The invention relates to a method for culturing golden flower fungus powder by utilizing tea leftovers. The method comprises the following steps: (1) screening golden flower fungus strains from Fuzhuan tea; (2) preparing a modified PDA fermentation liquid, inoculating golden flower fungi in a sterile operation manner and culturing; (3) preparing a golden flower fungus spore inoculation liquid; (4) smashing the tea leftovers and preparing a culture medium; (5) feeding the golden flower fungus spore inoculation liquid into a disinfection sprinkling can; (6) finishing nutrition growth and promoting the generation of cleistothecium; (7) fermenting; and (8) drying the culture medium and screening, thereby obtaining the golden flower fungus powder with a high purity. According to the method, the fermentation is finished by one step, so that the requirement to equipment is low; meanwhile, the pollution of sundry fungi is reduced, so that the probability of the pollution caused by the sundry fungi is decreased; the cost is low; the growth area is enlarged, so that the high yield of the golden flower fungus powder is realized.