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36results about How to "Increase the growth area" patented technology
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Laser preparation method for large-area patterned graphene
The invention discloses a laser preparation method for large-area patterned graphene. The preparation method comprises the following steps: (1) a solid carbon source is dispersed in an organic solvent to obtain a dispersion liquid, and the surface of a metal substrate is coated with the dispersion liquid in a spinning manner to obtain a uniform carbon coating; (2) under the condition of the protection of inert gas, a high power density laser beam is adopted to irradiate the carbon coating, and carbon atoms in the solid carbon source and metal atoms in the metal substrate are formed into a solid solution under function of irradiation; the high power density laser beam is moved away or the irradiation operation is stopped, when the metal substrate is cooled, the oversaturated solid solution is formed, and the carbon atoms are separated out of the oversaturated solid solution and formed on the surface of the substrate to form graphene. The invention provides a novel method which is convenient, fast, low in cost and high in efficiency and prepares the large-area patterned graphene. The product obtained through the method can be applied to the following fields: next generation microcomputers, flat-panel displays, super-capacitors, transparent conductive electrodes, sensors, solar batteries, micro-nano electronic devices, photoelectronic devices, self-spinning quantum devices, novel compound materials and so on.
Owner:TSINGHUA UNIV
Nano-structure three-dimensional distributed super-amphiphobic metal surface and preparation method thereof
ActiveCN108466015AIncrease the growth areaPrecise control of shapeMetallic material coating processesLaser beam welding apparatusMicrometerNanostructure
The invention discloses a nano-structure three-dimensional distributed super-amphiphobic metal surface and a preparation method thereof and belongs to the technical field of function materials. The super-amphiphobic surface is of a nano grass-shaped structure formed by mutually winding flexible thin nano ribbon-shaped units distributed on the surface of a three-dimensional micrometer array structure which is distributed on a metal substrate. The preparation method comprises the steps that the surface of the metal substrate is subjected to patterning erosion through ultrafast laser to form thethree-dimensional micrometer structure at first, then, the nano grass-shaped structure is formed on the surface of the three-dimensional micrometer structure through chemical bath oxidization, surfacemodification treatment is conducted through (Heptadecafluoro-1,1,2,2-tetradecyl)trimethoxysilane, and the super-hydrophobic super-oleophobic function is achieved. The super-amphiphobic surface has excellent durability, the preparation method of the super-amphiphobic surface is simple, easy to implement, fast, efficient and capable of achieving large-area preparation, the self cleaning performancecan be maintained for a long time under the outdoor environment and other multiple outside environments, and the super-amphiphobic metal surface has wide application prospects in the fields of national defense, industrial production, daily life and the like.
Owner:TSINGHUA UNIV
SiC substrate homoepitaxy carbon silicon double-atomic-layer film method
ActiveCN103489760AIncrease the growth areaShorten extension timePolycrystalline material growthSemiconductor/solid-state device manufacturingHydrogenAtmospheric pressure
The invention relates to a SiC substrate homoepitaxy carbon silicon double-atomic-layer film method. The method is characterized by comprising the steps of placing a processed SiC substrate into an epitaxy furnace, vacuumizing the epitaxy furnace, filling hydrogen into the epitaxy furnace to keep the pressure as 100mbar, heating the epitaxy furnace, carrying out in-site etching on the processed SiC substrate, keeping the temperature at 1600 DEG C, filling SiH4 into the epitaxy furnace at the speed of 3ml / min and C3H8 into the epitaxy furnace at the speed of 1.1ml / min, filling carrier hydrogen into the epitaxy furnace at the speed of 4500ml / min, and carrying out cantilever growth at the inner corner position of an etched pattern of the SiC substrate to generate a SiC epitaxial wafer. A grown cantilever is of a non-defective carbon silicon double-atomic-layer structure. According to the SiC substrate homoepitaxy carbon silicon double-atomic-layer film method, a layer of thin complete non-defective cantilever is formed in an etching tabletop of the top end of the positive-axis silicon carbide substrate in an extending mode. Furthermore, epitaxy time is effectively shortened, and the film growth area is improved.
Owner:宁波合盛新材料有限公司
Carbon nanotube preparing apparatus and process
InactiveCN1931714AAchieve preparationIncrease the growth areaMaterial nanotechnologyFibre chemical featuresCarbon nanotubeChemistry
The carbon nanotube preparing apparatus includes one reaction cavity with gas inlet in the bottom and one gas exhaust port in the top and opposite to the gas inlet; one base bearer located inside the reaction cavity and between the gas inlet and the gas exhaust port; and at least one base on the base bearer and with flow guiding holes and one catalyst on its surface. The present invention also provides process of preparing carbon nanotube with the said apparatus.
Owner:HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
Method for mass production of pseudorabies virus vaccine
InactiveCN101804203ASolve the problems of low production output, high labor intensity and high costExpand production scaleAntiviralsTissue/virus culture apparatusFiberPolyester
The invention discloses a method for mass production of pseudorabies virus vaccine, comprising the following steps: (a) adding netty polyester fiber which serves as a carrier into a bioreactor provided with a tide type micro-carrier suspension culture system and inoculating cells for producing vaccine; (b) inoculating pseudorabies virus vaccine when the culture cell grows to a certain intensity, so that the cells are infected by the pseudorabies virus vaccine; (c) reproducing the virus in great numbers under appropriate conditions; (d) harvesting the virus when cytopathic rate reaches above 70%; (e) carrying out freeze thawing on the harvested virus for once or twice to lead the cells to completely come off and disperse and then adding freeze-drying protective agent, evenly mixing the mixture, packaging the mixture in fixed volume and freeze-drying.The method of the invention has the advantages of good stability, explicit process control indicators, good controllability, easy operation, large process scale and the like.
Owner:PU LIKE BIO ENG
Graphene film, and making method and use thereof
The invention relates to a making method of a graphene film. The method comprises the following steps: 1, preparing a carrier for growing the graphene film, wherein the carrier is a multilayer separator plate-metal substrate structure formed by superposing separator plates and metal substrates at intervals; 2, placing the carrier in a reaction furnace, and heating under a vacuum condition or in an inert gas and reducing gas mixture; 3, introducing the inert gas and reducing gas into the reaction furnace when the temperature reaches 900-1100DEG C, carrying out heat insulation annealing, introducing a carbon source, and forming graphene films on the metal substrate; 4, separating the separators from the metal substrates; and 5, separating the graphene films from the metal substrates. The invention also relates to the graphene film made through the method, and a use of the graphene film as a transparent conductive electrode.
Owner:2D CARBON CHANGZHOU TECH INC
Novel three-dimensional nano carbon/stainless steel mesh compound biological anode as well as preparation method and application thereof
InactiveCN103972514AGood adhesionElectrocatalytic area with high current densityCell electrodesMechanical propertyRaw material
The invention discloses a novel three-dimensional nano carbon / stainless steel mesh compound biological anode as well as a preparation method and application thereof. The three-dimensional biological anode adopts nano carbon and stainless steel mesh as raw materials, and is formed through folding and sorption assembly construction. The three-dimensional nano carbon / stainless steel mesh compound biological anode displays excellent electric conductivity and mechanical property, is easy to process and form, and is provided with excellent microbic electrochemical property in a microbic fuel cell (MFE); the produced area electric current density is up to 40-300 A / m<2>; the volume electric current density is up to 5-35 kA / m<3>; the electrode material can be taken as an anode of an MFE, and is applied to the field of sewage disposal, biological remediation, and the like.
Owner:JIANGXI NORMAL UNIV
Method for planting suaeda salsa in coastal beach and application
ActiveCN111373995AExpand the scope of plantingHabitat expansionPlant cultivationCultivating equipmentsTidal waterIntertidal area
The invention belongs to the technical field of plant planting and discloses a method for planting suaeda salsa in a coastal beach and an application. The method comprises the steps of 1, planting area selection, selecting an area suitable for planting from a mid-tide area and a high-tide area of an intertidal zone and building a wave blocking zone; 2, seeding, namely selecting temperature, seeding rate and seeding time; and 3, management after seeding, namely carrying out net covering, diversion and drainage for preventing flooding. The step 1 specifically comprises the content of selecting the area suitable for planting from the mid-tide area and the high-tide area of the intertidal zone; building the water blocking zone in a tidewater entering direction and building a dam in an offshoredirection in the planting area; or planting phragmites australis, high-stalk straws and phyllostachys pubescens in the tidewater entering direction in the planting area. According to the method, thesuaeda salsa is planted in a suitable environment on the beach, so that the growth area of the suaeda salsa is increased, the growth environment of the suaeda salsa on the beach is repaired and a support is provided for the stabilization of the biological diversity on the beach.
Owner:江苏盐城国家级珍禽自然保护区管理处
Polycrystalline gallium nitride growth device
ActiveCN110952135AIncrease the growth areaIncrease productionPolycrystalline material growthFrom chemically reactive gasesEngineeringGallium nitride
The invention relates to a polycrystalline gallium nitride growth device. The polycrystalline gallium nitride growth device comprises a reaction container, the reaction container is axially provided with a first chamber main body and a second chamber main body which are communicated with each other, the first chamber main body is connected with at least two gas inflow channels, and a barrel is arranged in the second chamber main body; and the barrel body is provided with openings corresponding to the at least two gas inflow channels, and a plurality of components with through holes are arranged on the barrel at intervals in the axial direction of the barrel. The polycrystalline gallium nitride growth device can effectively increase the yield of polycrystalline gallium nitride, and the sizeof the polycrystalline gallium nitride growth device cannot be increased.
Owner:SHANGHAI XITANG SEMICON TECH CO LTD
KTP crystal growth method suitable for PPKTP device production
ActiveCN101319385AImprove uniformityHigh extinction ratioPolycrystalline material growthFrom melt solutionsRefractive indexEngineering
The invention discloses a KTP crystal growth method suitable for manufacturing a PPKTP device. The method comprises the following steps that: A) a long X-direction platy seed crystal is manufactured, a seed plate is cut along an XZ plane in the obtained longest X-direction KTP original crystal blank, a YZ plane is processed at the longest X-direction position perpendicular to the Z direction, the XZ plane on the two ends of the X-direction center line is chamfered along the X-direction center line on the YZ plane, the range of the formed vertex angle alpha is more than 0 degree and less than or equal to 180 degrees, and a beveling surface is ground and is taken as a seed crystal growth plane; and B) the seed crystal is immersed into a melting solution to cultivate according to the growth plane of the seed crystal, and the growth of the crystal is performed. The method utilizes the long X-direction line seed crystal to control the speed rate of the selective growth in the crystal growth process, and further prolongs the X-direction length of the seed crystal by the coarse X plane; moreover, compared with the ordinary fluxing agent growth method, the X-direction index of refraction and the electrical conductivity uniformity of the generated crystal are greatly improved, and the generated crystal is suitable for producing an optical parameter device with high quality and a PPKTP device.
Owner:BEIJING SINOMA SYNTHETIC CRYSTALS CO LTD +1
Self-stabilizing 'ear' lumbar vertebra intervertebral fusion device for minimally invasive dual-cortical vertebral body screw
The invention provides a self-stabilizing 'ear' lumbar vertebra intervertebral fusion device for a minimally invasive dual-cortical vertebral body screw, which includes a fusion device body, wherein the fusion device body is bent in an ear shape, the inner part of the fusion device body is vertical and hollow, the fusion device body includes a fusion device head part, a fusion device bottom part and a fusion device body part. The fusion device body part includes a fusion device central wall, an anterior implantation osseous cavity, and a posterior implantation osseous cavity. The fusion devicecentral wall is arranged in the fusion device body. The operation fusion device body is divided into the anterior implantation osseous cavity and the posterior implantation osseous cavity, and a plurality of through holes are arranged on the side walls of the anterior and posterior implantation osseous cavities. The bottom of the fuse device is provided with a plurality of threaded through holesfor fixing the fusion device main body and the plurality of threaded through holes are designed in a cross mode. The device has the self-stabilizing device, no pedicle screw rod system is needed for the fixation, the operation time is saved, the auxiliary injury is reduced, the fusion and carrying area are increased, and the possibility of sinking of the fusion device is reduced.
Owner:唐小毛
Device for purifying breeding water of net box and application thereof
ActiveCN101617643AIncrease the growth areaPromote reproductionPisciculture and aquariaBiological water/sewage treatmentFisheryPollution
The invention discloses a device for purifying the breeding water of a net box and an application thereof. The device is a net in which a porous material is arranged. The method utilizing the device of the invention to purify the breeding water of the net box comprises the following steps: (1) hanging the device below the breeding net box; and (2) inflating towards the inside of the device. The device has low cost, can enable nitrobacteria to automatically reproduce in a large amount, has no need of delivery, has simple and easy operation when being used for purifying the breeding water of the net box, has good purifying effect and is not easy to generate secondary pollution.
Owner:SOUTH CHINA SEA INST OF OCEANOLOGY - CHINESE ACAD OF SCI
Openable-type hailstone-proof device for grape planting
InactiveCN108522105AMeet the needs of growth and developmentProtection hitPlant protective coveringsSugarComputer science
The invention relates to the technical field of hailstone prevention for grapes, in particular to an openable-type hailstone-proof device for grape planting. The device aims at solving the technical problems that since hailstone-proof nets can block sunlight, unfruiting or parthenocarpic fruiting of grapes is caused when the grapes lack sunlight, coloring during a mature period is not great, and the sugar degree is lowered. In order to solve the technical problems above, the openable-type hailstone-proof device for grape planting includes four bases, the bottoms of the four bases are all fixedly connected with an anti-skid base, height increasing mechanisms are fixedly connected to the tops of the four bases respectively, an auxiliary power mechanism is arranged on the outer side wall of each height increasing mechanism, and an openable display mechanism is fixedly connected to the tops of the four height increasing mechanisms. Through the openable arrangement, the grapes can be protected from hitting of hailstones and can receive sufficient sunlight, and the labor efficiency of orchard workers is greatly improved.
Owner:李令锋
A kind of edible fungus cultivation rack
ActiveCN105850507BNo consumptionPromote environmental protectionCultivating equipmentsMushroom cultivationEdible mushroomBiology
The invention relates to the edible fungus planting technology, in particular to an edible fungus culture frame. In an existing edible fungus planting technology, the problems that the number of steps is large, the implementation process consumes time and labor, and a large amount of disposable plastic bags are consumed exist. The edible fungus culture frame comprises a frame body, material boxes, steam pipes and a plurality of culture bins. The culture bins are placed on the frame body, the material boxes are arranged in the culture bins, the culture bins are connected through the steam pipes, and a sealing door is further installed on the opening of each culture bin. Compared with the prior art, heating, sterilization and racking processes are integrated to one place, the effect of saving time and labor is achieved, a large quantity of plastic bags do not need to be consumed, and environment friendliness is facilitated.
Owner:颍上县祥盛建设管理有限公司
Method of applying rich water to reduce disease for mandarin fish aquaculture pond using herb cassia tora
InactiveCN106962240AReduce irritabilityMaterial obtainedClimate change adaptationAntiviralsDisease riskEconomic benefits
The invention provides a method of dressing the mandarin fish pond using cassia tora and preventing the mandarin fish from diseases. In the mandarin fish culture period, the cassia tora plant is harvested, after being tied in bundles, the cassia tora plant bundles are put into a pond, and topdressing is conducted on the mandarin fish pond and measures of disease prevention are taken for the mandarin fishes. According to the method, fresh cassia plants are adopted for enriching the pond water, the weaknesses that the ordinary fertilizers are difficult to store and inconvenient to use are overcome; in addition to the rich water function, the method has also the functions of stress reduction and disease resistance for the mandarin fish, the disease resistance of the mandarin fish is increased, the cultivate rate of the mandarin fish and the economic benefits are improved, and the ability to resist disease risks of mandarin fish culturing is facilitated.
Owner:PEARL RIVER FISHERY RES INST CHINESE ACAD OF FISHERY SCI
Parking lot cavity type pavement
InactiveCN101701444AIncrease the growth areaIncrease effective spaceTemporary pavingsHorticultureBrickEngineering
The invention relates to an outdoor pavement, in particular to a parking lot cavity type pavement. The pavement comprises a brick body, grass holes, a grass hole baffle plate, an upper concave and a lower concave, wherein the upper surface and lower surface of the square brick body are separately an upper concave with an arc and a lower concave an arc, and the grass hole baffle plate with a plurality of grass holes is arranged between the upper concave and the lower concave and is integrated with the brick body. Under the premise of not reducing the compression strength of the pavement, the useful space of the bottom of the parking lot cavity type pavement is increased so as to increase the growing area of the grass under the brick; and at the same time, the design of the upper concave can increase the lighting area of the grass so as to facilitate the growth of the grass.
Owner:CHENGDU JUNFENG TECH DEV
Etching method to enhance web growth
ActiveCN103474332BIncrease the growth areaShorten extension timeSemiconductor/solid-state device manufacturingEtchingThin layer
The invention relates to an etching method for improving Web Growth. The method includes: cleaning the processed SiC substrate with ultrasonic, alkaline mixture, concentrated sulfuric acid mixture, acidic mixture, and HF acid solution; using epitaxy The furnace performs in-situ etching on the processed SiC substrate; performs homogeneous epitaxy on the processed SiC substrate; performs cantilever growth at the inner corner of the etched pattern on the processed SiC substrate to form SiC epitaxial wafers, and the grown cantilever is defect-free carbon Silicon double atomic layer structure; the grown cantilever heals to form a carbon silicon double atomic layer film covering the etching mesa area. The invention improves the etching method of Web Growth, realizes the epitaxy of a thin layer of completely defect-free cantilever on the topmost etching table of the positive axis silicon carbide substrate, effectively shortens the epitaxy time and increases the film growth area.
Owner:XIDIAN UNIV
Mold used for producing ecological concrete quadruple connecting balls and application method thereof
InactiveCN107081841AIncrease contact areaIncrease the growth areaMouldsCoastlines protectionSpherical formMaterials science
The invention relates to the field of environment protective engineering materials, in particular to a mold used for producing ecological concrete quadruple connecting balls and an application method thereof. The mold convenient to install and dismantle and used for producing the ecological concrete quadruple connecting balls and the application method thereof. The mold comprises a box body. A circular protrusion is arranged in the middle of the bottom surface of the box body in an upward extending mode, four opposite corners at the bottom of the box body are each provided with a hemispherical groove, and an interval is reserved among the four hemispherical groove; and the bottom surface of each hemispherical groove is attached to the bottom surface of the box body, and the upper surfaces o the four hemispherical grooves are flush with one another. The edge of each hemispherical groove is provided with an arc block and the like in the upward extending mode. Through unique structural design of the mold, the ecological concrete quadruple connecting balls produced and machined by the mold are laid on a riverbank so that ecological construction on the two sides of a river way can be facilitated, and the growing area of vegetations is increased.
Owner:TONGXIANG HEYUAN CEMENT PROD
Ecological concrete four-linked ball and production method thereof
ActiveCN104088253BIncrease contact areaIncrease the growth areaCoastlines protectionCeramic shaping apparatusPorosityVegetation
The invention relates to the field of environmental protection engineering materials, in particular to an ecological concrete quadruple ball with strong ability to attach vegetation on the surface, which includes a base plate and a single ball, the base plate is a rectangular structure, and the base plate and the single ball are integrally formed of concrete A single ball is arranged at four diagonal positions on the upper surface of the substrate. The single ball is a hemispherical structure. The plane of the single ball is attached to the substrate. There is a gap between the single balls. There are through holes, the ecological concrete four-linked ball and its production method, the ecological concrete four-linked ball produced by it is laid on the embankment of the river, which is beneficial to the ecological construction on both sides of the river, and increases the contact area of the upper surface of the substrate and improves the vegetation. The growth area is large, and the through holes or gaps are conducive to the growth of small trees, so that they are firmly connected with the river embankment. At the same time, the compressive strength of the ecological concrete four-linked ball of the structure can reach more than C12, and its porosity can reach 20%. .
Owner:TONGXIANG HEYUAN CEMENT PROD
Metal interconnection structure and manufacture method thereof
ActiveCN103985669AIncrease the growth areaGood for high density growthSemiconductor/solid-state device detailsSolid-state devicesCarbon nanotubeMetal
The invention provides a metal interconnection structure and a manufacture method thereof. The growth area of a carbon nano tube is increased through a groove, formed through etching, of a previous metal interconnection layer, high-density growth of the carbon nano tube is facilitated, the formed high-density carbon nanao tube can serve as a growth source of a regenerated carbon nano tube in a subsequent through hole, density of the regenerated carbon nano tube in the through hole is improved, and accordingly the density of the carbon nano tubes growing from through holes is guaranteed and performance of the metal interconnection structure is improved.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP
A kind of hollow open gelatin cell microcarrier and its preparation method and application
InactiveCN104815356BRepair bone defectsEffective adhesionProsthesisGelatin microspheresFoaming agent
Owner:SUN YAT SEN UNIV
A planting method and application of Suaeda salsa in coastal flats
ActiveCN111373995BExpand the scope of plantingHabitat expansionPlant cultivationCultivating equipmentsTidal flatTidal water
Owner:江苏盐城国家级珍禽自然保护区管理处
A superamphiphobic metal surface with three-dimensional distribution of nanostructures and its preparation method
ActiveCN108466015BIncrease the growth areaPrecise control of shapeMetallic material coating processesLaser beam welding apparatusNano structuringLaser patterning
The invention discloses a nano-structure three-dimensional distributed super-amphiphobic metal surface and a preparation method thereof and belongs to the technical field of function materials. The super-amphiphobic surface is of a nano grass-shaped structure formed by mutually winding flexible thin nano ribbon-shaped units distributed on the surface of a three-dimensional micrometer array structure which is distributed on a metal substrate. The preparation method comprises the steps that the surface of the metal substrate is subjected to patterning erosion through ultrafast laser to form thethree-dimensional micrometer structure at first, then, the nano grass-shaped structure is formed on the surface of the three-dimensional micrometer structure through chemical bath oxidization, surfacemodification treatment is conducted through (Heptadecafluoro-1,1,2,2-tetradecyl)trimethoxysilane, and the super-hydrophobic super-oleophobic function is achieved. The super-amphiphobic surface has excellent durability, the preparation method of the super-amphiphobic surface is simple, easy to implement, fast, efficient and capable of achieving large-area preparation, the self cleaning performancecan be maintained for a long time under the outdoor environment and other multiple outside environments, and the super-amphiphobic metal surface has wide application prospects in the fields of national defense, industrial production, daily life and the like.
Owner:TSINGHUA UNIV
Method for homoepitaxial carbon silicon double atomic layer thin film on sic substrate
ActiveCN103489760BIncrease the growth areaShorten extension timePolycrystalline material growthSemiconductor/solid-state device manufacturingCarbon filmHydrogen
The invention relates to a SiC substrate homoepitaxy carbon silicon double-atomic-layer film method. The method is characterized by comprising the steps of placing a processed SiC substrate into an epitaxy furnace, vacuumizing the epitaxy furnace, filling hydrogen into the epitaxy furnace to keep the pressure as 100mbar, heating the epitaxy furnace, carrying out in-site etching on the processed SiC substrate, keeping the temperature at 1600 DEG C, filling SiH4 into the epitaxy furnace at the speed of 3ml / min and C3H8 into the epitaxy furnace at the speed of 1.1ml / min, filling carrier hydrogen into the epitaxy furnace at the speed of 4500ml / min, and carrying out cantilever growth at the inner corner position of an etched pattern of the SiC substrate to generate a SiC epitaxial wafer. A grown cantilever is of a non-defective carbon silicon double-atomic-layer structure. According to the SiC substrate homoepitaxy carbon silicon double-atomic-layer film method, a layer of thin complete non-defective cantilever is formed in an etching tabletop of the top end of the positive-axis silicon carbide substrate in an extending mode. Furthermore, epitaxy time is effectively shortened, and the film growth area is improved.
Owner:宁波合盛新材料有限公司
Bioreactor and method for the biological purification of water
ActiveCN101312915BAchieve rotary motionIncrease the growth areaTreatment using aerobic processesSustainable biological treatmentBiofilmEnvironmental engineering
The invention relates to a bioreactor (1) for the purification of waters, said reactor comprising a cross-sectionally essentially circular or elliptical tank section (2) provided with inlet means (5) for water to be purified and outlet means (6) for purified water. The tank holds thereinside carrier material (3) on which a biofilm may develop. The tank is further provided with means (4) for supplying a fluid which contains a reaction gas required by the purification process, such that the water to be purified develops gas bubbles containing a reaction gas. The tank section is adapted to be essentially full of water during the purification process. The fluid supply means (4) are disposed on the tank wall and the reactor comprises control means for operating the fluid supply means in such away that a spinning motion of the carrier, the water, and at least some of said reaction-gas bearing bubbles is effected thereby around a rotation centerline passing essentially through the tank 's cross-sectional center. The control means are adapted to optionally effect a deactivation of the fluid supply means at desired times and / or a replacement of the fluid with an oxygen-free fluid for providing an anaerobic process. The invention relates also to a method for the biological purification of waters in a bioreactor.
Owner:CLEWER
Polycrystalline Gallium Nitride Growth Device
ActiveCN110952135BIncrease the growth areaIncrease productionPolycrystalline material growthFrom chemically reactive gasesMechanical engineeringMaterials science
The present application relates to a polycrystalline gallium nitride growth device. The polycrystalline gallium nitride growth device includes a reaction vessel, the reaction vessel is provided with a first chamber main body and a second chamber main body communicating with each other in the axial direction, the first chamber main body is connected with at least two gas inflow channels, and the first chamber main body is connected with at least two gas inflow channels. The main body of the second chamber is provided with a cylinder; the cylinder has openings corresponding to at least two gas inflow passages, and the cylinder is provided with a plurality of components with through holes at intervals in the axial direction. The above polycrystalline GaN growth device can effectively increase the yield of polycrystalline GaN without increasing the size of the polycrystalline GaN growth device.
Owner:SHANGHAI XITANG SEMICON TECH CO LTD
Homogeneous network growth web Growth epitaxy method on sic substrate
ActiveCN103489759BIncrease the growth areaShorten extension timeSemiconductor/solid-state device manufacturingFrom chemically reactive gasesCantileverSic substrate
The invention relates to a SiC substrate homogeneous Web Growth epitaxy method. The method comprises the steps of choosing a positive-axis 4H or 6H original SiC substrate, carrying out developing process and dry etching process on the original SiC substrate to obtain a processed SiC substrate, utilizing an epitaxy furnace to carry out in-situ etching on the processed SiC substrate, carrying out homogeneous epitaxy processing on the processed SiC substrate, carrying out cantilever growth at the inner corner position of an etched pattern of the processed SiC substrate to generate a SiC epitaxy wafer, regrowing a grown cantilever into a layer of carbon silicon double-atomic-layer film to cover an etched tabletop area, and taking the grown SiC epitaxy wafer out of the epitaxy furnace. The grown cantilever is of a non-defective carbon silicon double-atomic-layer structure. According to the SiC substrate homogeneous Web Growth epitaxy method, a layer of thin complete non-defective cantilever is formed in an etching tabletop of the top end of the positive-axis silicon carbide substrate in an extending mode. Furthermore, epitaxy time is effectively shortened, and the film growth area is improved.
Owner:宁波合盛新材料有限公司
A method for cultivating golden flower fungus powder from tea leaves
InactiveCN103865810BLow equipment requirementsNo sterile environment requiredFungiMicroorganism based processesSporeFermentation
Owner:HUNAN CITY UNIV
KTP crystal growth method suitable for PPKTP device production
ActiveCN101319385BImprove uniformityHigh extinction ratioPolycrystalline material growthFrom melt solutionsRefractive indexEngineering
The invention discloses a KTP crystal growth method suitable for manufacturing a PPKTP device. The method comprises the following steps that: A) a long X-direction platy seed crystal is manufactured, a seed plate is cut along an XZ plane in the obtained longest X-direction KTP original crystal blank, an XY plane is processed at the longest X-direction position perpendicular to the Z direction, the XZ plane on the two ends of the X-direction center line is chamfered along the X-direction center line on the XY plane, the range of the formed vertex angle alpha is more than 0 degree and less than or equal to 180 degrees, and a beveling surface is ground and is taken as a seed crystal growth plane; and B) the seed crystal is immersed into a melting solution to cultivate according to the growth plane of the seed crystal, and the growth of the crystal is performed. The method utilizes the long X-direction line seed crystal to control the speed rate of the selective growth in the crystal growth process, and further prolongs the X-direction length of the seed crystal by the coarse X plane; moreover, compared with the ordinary fluxing agent growth method, the X-direction index of refraction and the electrical conductivity uniformity of the generated crystal are greatly improved, and the generated crystal is suitable for producing an optical parameter device with high quality and a PPKTP device.
Owner:BEIJING SINOMA SYNTHETIC CRYSTALS CO LTD +1
Method of pruning branches and leaves of peach tree
InactiveCN108012695AIncrease the growth areaLarge irradiation areaHorticulture methodsPruningAmygdalus persica
The invention provides a method for pruning branches and leaves of a peach tree, belonging to the field of plantation of peach leaves. The invention can effectively solve the disadvantage of small growth area of peach leaves pruned through an ordinary method. According to the invention, pruning of the branches and the leaves of the peach tree is selected to be performed in winter, and guaranteed to be completed before the spring of the next year; the peach tree with the top part as a plane is selected for pruning; the top part of the peach tree is pruned into an arched shape through a pruner;and each row of peach trees from the front end to the tail part is pruned in place, and maintained to be neat and consistent.
Owner:阳新绿源农业科技有限公司
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