36results about How to "Increase the growth area" patented technology

The carbon nanotube preparing apparatus includes one reaction cavity with gas inlet in the bottom and one gas exhaust port in the top and opposite to the gas inlet; one base bearer located inside the reaction cavity and between the gas inlet and the gas exhaust port; and at least one base on the base bearer and with flow guiding holes and one catalyst on its surface. The present invention also provides process of preparing carbon nanotube with the said apparatus.

The invention relates to an etching method for improving Web Growth. The method includes: cleaning the processed SiC substrate with ultrasonic, alkaline mixture, concentrated sulfuric acid mixture, acidic mixture, and HF acid solution; using epitaxy The furnace performs in-situ etching on the processed SiC substrate; performs homogeneous epitaxy on the processed SiC substrate; performs cantilever growth at the inner corner of the etched pattern on the processed SiC substrate to form SiC epitaxial wafers, and the grown cantilever is defect-free carbon Silicon double atomic layer structure; the grown cantilever heals to form a carbon silicon double atomic layer film covering the etching mesa area. The invention improves the etching method of Web Growth, realizes the epitaxy of a thin layer of completely defect-free cantilever on the topmost etching table of the positive axis silicon carbide substrate, effectively shortens the epitaxy time and increases the film growth area.

The invention relates to the field of environmental protection engineering materials, in particular to an ecological concrete quadruple ball with strong ability to attach vegetation on the surface, which includes a base plate and a single ball, the base plate is a rectangular structure, and the base plate and the single ball are integrally formed of concrete A single ball is arranged at four diagonal positions on the upper surface of the substrate. The single ball is a hemispherical structure. The plane of the single ball is attached to the substrate. There is a gap between the single balls. There are through holes, the ecological concrete four-linked ball and its production method, the ecological concrete four-linked ball produced by it is laid on the embankment of the river, which is beneficial to the ecological construction on both sides of the river, and increases the contact area of ​​the upper surface of the substrate and improves the vegetation. The growth area is large, and the through holes or gaps are conducive to the growth of small trees, so that they are firmly connected with the river embankment. At the same time, the compressive strength of the ecological concrete four-linked ball of the structure can reach more than C12, and its porosity can reach 20%. .

The invention discloses a hollow open gelatin cell micro-carrier and a preparation method and an application thereof. The preparation method includes that using gelatin and bee wax as raw materials, using a double-emulsion method to prepare a gelatin-bee wax micro-ball, remodeling in ethanol / water solution, cross-linking in glutaraldehyde / ethanol solution, and extruding out a small bee wax ball from the gelatin micro-ball to obtain the hollow open gelatin micro-carrier. The hollow open gelatin cell micro-carrier uses the bee wax as pore-foaming agent and uses the double-emulsion method to prepare the gelatin micro-ball, after heating and drying ethanol / water, a dense shell layer is formed at the surface of the gelatin, and glutaraldehyde / ethanol solution is added to enable the surface to cross-link; force is exerted to extrude the micro-ball after being dried, and the small bee wax ball in the gelatin micro-ball is stressed to enable the cross-linked layer of the surface to break to obtain the hollow open shell structure gelatin micro-carrier; the micro-carrier is featured with low density and high specific surface area and enables the large-scale cell culture to be possible; the hollow open gelatin cell micro-carrier is excellent in biological degradability and biocompatibility and capable of being used as stuffing repairing material for the bone defect in the tissue engineering.

The invention belongs to the technical field of plant planting, and discloses a planting method and application of Suaeda salsa in coastal flats, step 1, planting areas, selecting suitable planting areas in the mid-tidal zone and high-tide zone of the intertidal zone, and constructing a wave-stopping belt; Step 2, sowing, the selection of temperature, seeding rate, and sowing time; Step 3, post-sowing management, covering the net, draining water and preventing flooding. Step 1 specifically includes: selecting an area suitable for planting in the mid-tidal area and high-tide area of ​​the intertidal zone; building a wave-resisting belt in the direction of the tidal water, building a dam in the offshore direction of the planting area, or planting reeds and tall straw in the direction of the tidal water in the planting area , Bamboo pole. The invention plants the Suaeda salsa in the suitable environment of the tidal flat, increases the growth area of ​​the Suaeda salsa, restores the habitat of the Suaeda salsa in the tidal flat, and provides support for the stability of the biological diversity of the tidal flat.

The invention discloses a nano-structure three-dimensional distributed super-amphiphobic metal surface and a preparation method thereof and belongs to the technical field of function materials. The super-amphiphobic surface is of a nano grass-shaped structure formed by mutually winding flexible thin nano ribbon-shaped units distributed on the surface of a three-dimensional micrometer array structure which is distributed on a metal substrate. The preparation method comprises the steps that the surface of the metal substrate is subjected to patterning erosion through ultrafast laser to form thethree-dimensional micrometer structure at first, then, the nano grass-shaped structure is formed on the surface of the three-dimensional micrometer structure through chemical bath oxidization, surfacemodification treatment is conducted through (Heptadecafluoro-1,1,2,2-tetradecyl)trimethoxysilane, and the super-hydrophobic super-oleophobic function is achieved. The super-amphiphobic surface has excellent durability, the preparation method of the super-amphiphobic surface is simple, easy to implement, fast, efficient and capable of achieving large-area preparation, the self cleaning performancecan be maintained for a long time under the outdoor environment and other multiple outside environments, and the super-amphiphobic metal surface has wide application prospects in the fields of national defense, industrial production, daily life and the like.

The invention relates to a SiC substrate homoepitaxy carbon silicon double-atomic-layer film method. The method is characterized by comprising the steps of placing a processed SiC substrate into an epitaxy furnace, vacuumizing the epitaxy furnace, filling hydrogen into the epitaxy furnace to keep the pressure as 100mbar, heating the epitaxy furnace, carrying out in-site etching on the processed SiC substrate, keeping the temperature at 1600 DEG C, filling SiH4 into the epitaxy furnace at the speed of 3ml / min and C3H8 into the epitaxy furnace at the speed of 1.1ml / min, filling carrier hydrogen into the epitaxy furnace at the speed of 4500ml / min, and carrying out cantilever growth at the inner corner position of an etched pattern of the SiC substrate to generate a SiC epitaxial wafer. A grown cantilever is of a non-defective carbon silicon double-atomic-layer structure. According to the SiC substrate homoepitaxy carbon silicon double-atomic-layer film method, a layer of thin complete non-defective cantilever is formed in an etching tabletop of the top end of the positive-axis silicon carbide substrate in an extending mode. Furthermore, epitaxy time is effectively shortened, and the film growth area is improved.

The present application relates to a polycrystalline gallium nitride growth device. The polycrystalline gallium nitride growth device includes a reaction vessel, the reaction vessel is provided with a first chamber main body and a second chamber main body communicating with each other in the axial direction, the first chamber main body is connected with at least two gas inflow channels, and the first chamber main body is connected with at least two gas inflow channels. The main body of the second chamber is provided with a cylinder; the cylinder has openings corresponding to at least two gas inflow passages, and the cylinder is provided with a plurality of components with through holes at intervals in the axial direction. The above polycrystalline GaN growth device can effectively increase the yield of polycrystalline GaN without increasing the size of the polycrystalline GaN growth device.

The invention relates to a SiC substrate homogeneous Web Growth epitaxy method. The method comprises the steps of choosing a positive-axis 4H or 6H original SiC substrate, carrying out developing process and dry etching process on the original SiC substrate to obtain a processed SiC substrate, utilizing an epitaxy furnace to carry out in-situ etching on the processed SiC substrate, carrying out homogeneous epitaxy processing on the processed SiC substrate, carrying out cantilever growth at the inner corner position of an etched pattern of the processed SiC substrate to generate a SiC epitaxy wafer, regrowing a grown cantilever into a layer of carbon silicon double-atomic-layer film to cover an etched tabletop area, and taking the grown SiC epitaxy wafer out of the epitaxy furnace. The grown cantilever is of a non-defective carbon silicon double-atomic-layer structure. According to the SiC substrate homogeneous Web Growth epitaxy method, a layer of thin complete non-defective cantilever is formed in an etching tabletop of the top end of the positive-axis silicon carbide substrate in an extending mode. Furthermore, epitaxy time is effectively shortened, and the film growth area is improved.

The invention relates to a method for culturing golden flower fungus powder by utilizing tea leftovers. The method comprises the following steps: (1) screening golden flower fungus strains from Fuzhuan tea; (2) preparing a modified PDA fermentation liquid, inoculating golden flower fungi in a sterile operation manner and culturing; (3) preparing a golden flower fungus spore inoculation liquid; (4) smashing the tea leftovers and preparing a culture medium; (5) feeding the golden flower fungus spore inoculation liquid into a disinfection sprinkling can; (6) finishing nutrition growth and promoting the generation of cleistothecium; (7) fermenting; and (8) drying the culture medium and screening, thereby obtaining the golden flower fungus powder with a high purity. According to the method, the fermentation is finished by one step, so that the requirement to equipment is low; meanwhile, the pollution of sundry fungi is reduced, so that the probability of the pollution caused by the sundry fungi is decreased; the cost is low; the growth area is enlarged, so that the high yield of the golden flower fungus powder is realized.

The invention discloses a KTP crystal growth method suitable for manufacturing a PPKTP device. The method comprises the following steps that: A) a long X-direction platy seed crystal is manufactured, a seed plate is cut along an XZ plane in the obtained longest X-direction KTP original crystal blank, an XY plane is processed at the longest X-direction position perpendicular to the Z direction, the XZ plane on the two ends of the X-direction center line is chamfered along the X-direction center line on the XY plane, the range of the formed vertex angle alpha is more than 0 degree and less than or equal to 180 degrees, and a beveling surface is ground and is taken as a seed crystal growth plane; and B) the seed crystal is immersed into a melting solution to cultivate according to the growth plane of the seed crystal, and the growth of the crystal is performed. The method utilizes the long X-direction line seed crystal to control the speed rate of the selective growth in the crystal growth process, and further prolongs the X-direction length of the seed crystal by the coarse X plane; moreover, compared with the ordinary fluxing agent growth method, the X-direction index of refraction and the electrical conductivity uniformity of the generated crystal are greatly improved, and the generated crystal is suitable for producing an optical parameter device with high quality and a PPKTP device.